• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.35-35
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• 2002

Atomic force microscopy was applied to study the formation and growth mechanism of thin chrome layers prepared under various pulse plating conditions. The chrome was electro-deposited from an electrolyte bath containing 250 gl-l of chromic acid, 25 gl-l of sulfuric acid using direct current density of $1.6{\;}mA.$\textrm{mm}^{-2} and pulse currents with on-off time from 5 to 900 ms. The higher current density enhanced nucleation rate which resulted in refining grain size. The chrome growth kinetics determining nodule size and shape significantly depends on the duration of on-time rather than duration of off-time and on/off time ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.668-672
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.961-968
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권4호
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• 한국체육학회지인문사회과학편
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• 제57권4호
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• pp.387-394
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• 2018

본 연구의 목적은 국제아이스하키연맹(IIHF)이 개최하는 대회에서 승리 팀을 결정하는 주요 변인들을 파악하여 전략 및 전술 수립에 필요한 정보를 제공하는 것이다. 2017 IIHF World Championship 1부 리그 14개 팀의 예선 및 본선을 포함한 64개 경기의 기록지를 분석대상으로 하였다. 분석변인은 save, shot on goal, penalty in minute, time on power play, power play goal, face off win의 비율, 승패 간 로지스틱 회귀분석, 중다회귀분석, 주성분분석을 수행하였다. 로지스틱 회귀분석 결과 승리와 관련이 있는 변인은 shot on goal(p<.001)와 face off win(p<.001)이고 penalty in minute(p<.01)과 time on power play(p<.01)는 부정적인 영향을 미친다. 중다회귀분석에 의하여 산출한 승패 비율과 각 변인과의 상관분석에서는 save(p<.01), face off win(p<.001)가 정적인 상관관계이고 penalty in minute(p<.001)이 부정적인 상관관계이다. 주성분분석 결과에서는 승리한 팀의 경우 페널티 요인, 공격 요인, 수비 요인으로 구성되는 반면 패배한 팀에서는 페널티 요인을 제외하고 공격과 수비 요인이 혼합되어 구성되었다. 따라서 최상위 팀이 참가하는 아이스하키 경기에서 승리하기 위해서는 페널티를 받지 않는 내에서 거친 플레이가 이루어져야 하고 face off win 비율을 높일 수 있는 방안이 마련되어야 할 것이다.

• The Journal of the Acoustical Society of Korea
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• 제16권2E호
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• pp.47-54
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• 1997

This paper presents two results on intersymbol interferences in baseband digital communication over an additive white Gaussian noise channel-the interferences due to mismatched square-root raised-cosine filters, in which the filters have different roll-off factors, and / or due to sampling-time jitter. The result for the mismatched filters is that even the jitter-free sampling causes intersymbol interference and it is negligibly small for a wide range of signal-to-noise ratio up to 10dB, for the roll-off factor ranging from 0.2 to 0.5, the mismatch loss being within 0.1dB from the optimum at around 10-6 .For jitter interference an approximation formula for the bit error probability is derived in case of the matched filters, which shows how the roll-off factors and the amount of jitter affect the system performance. The formula is reasonably accurate.

• 품질경영학회지
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• 제16권1호
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• pp.23-31
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• 1988

This paper studies the handling of significant digits and rounding off methods in domestic industries. ANOVA tables made by six well-known big companies are selected and analyzed. There exist various mistakes in handling of significant digits and rounding off methods such as: * too many significant digits in the Sum of Squares values in comparison to the original data * too many significant digits in the variance ratio in comparison to the F table values. * no consistancy in the number of significant digits * no consideration for the number of significant digits in computations * ignoring the KS A 0021 in rounding off methods etc. Such mistakes are caused from the characteristics of the personal computers rather than the misunderstandings about the significant digits conception. A subroutine is developed for PC in BASIC language to help the handling of significant digits and rounding off.

• 한국자동차공학회논문집
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• 제8권5호
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• pp.207-215
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• 2000

This study theoretically investigated the roll-off cleanliness operation to eliminate the built-in contaminants which are primarily the result of manufacturing and assembly procedures first. A rigorous analytical examination of the cleaning process associated with hydraulic systems was performed by developing the general filtration process equations. The sloughing process by which built-in contaminant is entrained in the system fluid was examined during the development of a general analytical expression for sloughing rate. This sloughing rate expression in conjunction with the filtration process equations have lead to a relationship rate expression in conjunction with the filtration process equations have lead to a relationship which describes the flushing and clean-up operation for the hydraulic systems. The effects of the primary roll-off cleanliness factors was discussed and illustrated on the figures. Then, the analytical results was shown to be usefully applied into the design of roll-off flushing equipment for the hydraulic system of a tractor.

• 한국산학기술학회논문지
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• 제15권8호
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• pp.4729-4735
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• 2014

적극적인 환경보호를 위해 그동안 상대적으로 소홀하였던 오프로드 엔진에 대한 배기가스 배출 규제가 강화되고 있다. 본 연구에서는 NOx와 PM 배출물 특성을 고려하여 오프로드 디젤 엔진의 강건 설계를 수행하였다. 이를 위하여 실험계획법에 따라 배출물 NOx와 PM의 측정 실험을 수행하고 다구찌 기법으로 망소 SN 비를 산출하고 분산 분석을 수행하였다. NOx와 PM 배출량에 영향을 미치는 제어 인잘로 인젝터 홀 수, 연료 분사 시기, EGR 율을 선택하였으며 각 제어 인자에 대하여 2 또는 3 수준을 고려하여 직교 배열표를 작성하였고, 이에 근거하여 실험을 수행하였다. 망소 SN 비를 산출하고 델타 통계량을 계산하였다. 저부하 운전 조건에서는 분사 시기가 NOx 배출량에 가장 큰 영향을 미치며, EGR 율이 PM 배출량에 가장 큰 영향을 미치는 결과를 얻었다. 제어 인자들에 대한 신뢰수준은 90% 이상이었다.