• Title/Summary/Keyword: Omega-6

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Measuring System of Visual Evoked Potential (VEP) in Mice using BioPAC Modules (BioPAC 모듈을 이용한 마우스 시각유발전위 측정 시스템 확립)

  • Lee, Wang Woo;Ahn, Jung Ryul;Goo, Yong Sook
    • Journal of Biomedical Engineering Research
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    • v.38 no.1
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    • pp.16-24
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    • 2017
  • For the development of feasible retinal prosthesis, one of the important elements is acquiring proper judging tool if electrical stimulus leads to patient's visual perception. If evoked potential to electrical stimulus is recorded in primary visual (V1) cortex, it means that the stimulus effectively evokes visual perception. Therefore, in this study, we established VEP recording system on V1 cortex using BioPAC modules as the judging tool. And the measuring system was evaluated by recording VEP of mice. After anesthesia, normal mice (C57BL/6J strain; n = 6) were secured to stereotaxic apparatus (Harvard Apparatus, USA). For the recording of VEP, the stainless steel needle electrode (impedance: $2-5k{\Omega}$) was positioned on the surface of the cortex through the burr hole at 2.5 mm lateral and 4.6 mm caudal to bregma. DA 100C and EEG 100C BioPAC modules were used for the trigger signal and VEP recording, respectively. When left eye was blocked by black cover and right eye was stimulated by flash light using HMsERG (RetVet Corp, USA), VEP response at left V1 cortex was detected, but there was no response at right V1 cortex. Amplitudes and latencies of P2, N3 peaks of VEP recording varied according to the depths of the electrodes on V1 cortex. From the surface upto $600{\mu}m$ depth, amplitudes of P2 and N3 increased, while deeper than $600{\mu}m$, those amplitudes decreased. The deeper the insertion depth of the electrode, the latency of N1 peaks tends to be delayed. However, there was no statistically significant difference among the latencies of P2 and N3 peaks (P > 0.05, ANOVA). Our VEP recording data such as the insertion depth and the latency and amplitudes of peaks might be used as guidelines for electrically-evoked potential (EEP) recording experiment in near future.

Fabrication of Microwire Arrays for Enhanced Light Trapping Efficiency Using Deep Reactive Ion Etching

  • Hwang, In-Chan;Seo, Gwan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.454-454
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    • 2014
  • Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

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Characteristics of MOCVD Cobalt on ALD Tantalum Nitride Layer Using $H_2/NH_3$ Gas as a Reactant

  • Park, Jae-Hyeong;Han, Dong-Seok;Mun, Dae-Yong;Yun, Don-Gyu;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.377-377
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    • 2012
  • Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

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A Study of the Photoluminescence of ZnO Thin Films Deposited by Radical Beam Assisted Molecular Beam Epitaxy (라디칼 빔 보조 분자선 증착법 (Radical Beam Assisted Molecular Beam Epitaxy) 법에 의해 성장된 ZnO 박막의 발광 특성에 관한 연구)

  • Suh, Hyo-Won;Byun, Dong-jin;Choi, Won-Kook
    • Korean Journal of Materials Research
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    • v.13 no.6
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    • pp.347-351
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    • 2003
  • II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

Characteristics of ITO with surface treatment by N2, O2, Ar Plasma and UV (질소, 산소, 아르곤 플라즈마와 자외선에 의하여 표면 처리한 ITO의 특성)

  • Bae, Gyeong-Tae;Jeong, Seon-Yeong;Gang, Seong-Ho;Kim, Hyeon-Gi;Kim, Byeong-Jin;Ju, Seong-Hu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.90-90
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    • 2018
  • 디스플레이는 다수의 가로 전극과 세로 전극으로 구성되고, 전극에 신호를 주어 동작하도록 하는 원리이다. 이 디스플레이에는 전기가 통하고 투명한 전극이 필수적으로 사용되고 있고, 대표적인 투명 전극으로 ITO (Indium Tin Oxide)가 있다. ITO 박막은 $In_2O_3$에 Sn을 첨가하여 $Sn^{4+}$ 이온이 $In^{3+}$ 이온을 치환하고 이 과정에서 잉여 전자가 전기전도에 기여하는 구조이다. ITO 박막은 표면 처리 방법에 따라 표면 상태가 크게 변화한다. 플라즈마를 이용한 표면 처리는 환경오염이 적으며 강도, 탄성률 등과 같은 재료의 기계적 특성을 변화시키지 않으면서 표면 특성만을 변화시킬 수 있는 방법으로 알려져 있다[1]. UV (Ultraviolet)를 조사한 표면처리는 ITO 표면의 탄소를 제거하고, 표면 쌍극자를 형성하며, 표면의 조성을 변화시킬 수 있으며, 페르미 에너지 준위를 이동시킬 수 있어 ITO의 일함수를 증가시킬 수 있다[2]. ITO에 대한 다양한 연구가 수행되었음에도 불구하고 보다 다양한 관점에서의 연구가 지속될 필요가 있다. 따라서 본 연구에서는 다양한 조건으로 표면 처리한 ITO 표면의 일함수, 면저항, 표면 형상, 평탄도, 접촉각 등에 대해 알아보고자 한다. 세정한 ITO, 세정 후 UV 처리한 ITO (UV 처리 시간 2분, 4분 6분, 8분), 세정 후 $N_2$, $O_2$, Ar의 공정 가스를 사용하여 Plasma 처리한 ITO로 표면 처리 조건을 변화하였다. 표면 처리한 ITO의 특성은 Kelvin Probe를 이용한 일함수, 물방울 형상의 각도를 측정한 접촉각, AFM (Atomic Force Microscope)을 이용한 평탄도, 가시광선 (380~780 nm) 파장에 대한 투과도와 면저항을 측정하였다. 접촉각은 세정한 ITO의 경우 $45.5^{\circ}$에서 세정 후 UV를 조사한 ITO의 경우 UV 8분 조사 시 $27.86^{\circ}$로 감소하였고, $N_2$, $O_2$, Ar 가스를 사용하여 Plasma 처리한 ITO는 모두 $10^{\circ}$ 미만을 나타내었다. 플라즈마 처리에 의하여 접촉각이 현저하게 개선되었다. ITO의 면저항은 표면 처리 조건에 따라 $9.620{\sim}9.903{\Omega}/{\square}$로 그 차이가 매우 적어 표면처리에 의하여 면저항의 변화는 없는 것으로 판단된다. 가시광선 영역에서의 투과도는 공정 조건에 따라 87.59 ~ 89.39%로 그 차이가 적어 표면처리에 의한 변화를 나타내지는 않은 것으로 판단된다. 표면 처리 조건에 따른 평탄도 $R_{rms}$는 세정한 ITO의 경우 4.501 nm로부터 UV 2, 4, 6, 8분 처리한 경우 2.797, 2.659, 2.538, 2.584 nm로 평탄도가 개선되었다. $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우 평탄도 $R_{rms}$는 2.49, 4.715, 4.176 nm로 사용한 가스의 종류에 따라 다른 경향을 나타내었다. 표면 처리 조건에 따른 평탄도 Ra는 세정한 ITO의 경우 3.521 nm로부터 UV 2, 4, 6, 8분 처리한 경우 1.858, 1.967, 1.896, 1.942 nm를, $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우는 1.744, 3.206, 3.251 nm로 평탄도 $R_{rms}$와 유사한 경향을 나타내었다.

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$NO_{2}$ Sensing Properties of Oxide Semiconductor Thick Films (산화물 반도체형 후막 가스 센서의 이산화질소 감지 특성)

  • Kim, Seung-Ryeol;Yun, Dong Hyun;Hong, Hyung-Ki;Kwon, Chul-Han;Lee, Kyu-Chung
    • Journal of Sensor Science and Technology
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    • v.6 no.6
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    • pp.451-457
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    • 1997
  • The thick films of oxide semiconductors such as $WO_{3}$, $SnO_{2}$ and ZnO for the $NO_{2}$ detection of sub-ppm range have been prepared and their characteristics were investigated. It is showed that the optimum operating temperatures of the sensors are $300^{\circ}C$ and $220{\sim}260^{\circ}C$ for $WO_{3}$-based and $SnO_{2}$-based thick films, and ZnO-based thick films, respectively. Since the resistance of ZnO-based thick films are extremely high($>10^{6}{\Omega}$), the signal to noise ratio was comparatively low. In order to determine the selectivity, the films are exposed to the interfering gases such as ozone, ammonia, methane and the mixture of carbon monoxide and propane. $WO_{3}$-ZnO(3 wt.%) and $SnO_{2}-WO_{3}$(3 wt.%) thick film sensors show high sensitivity, good selectivity, excellent reproducibility and the linearity of $NO_{2}$ concentration versus sensor resistance. The preliminary results clearly demonstrated that the sensor can be successfully applied for the detection of $NO_{2}$ in sub-ppm range.

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Temporal Changes in Neuronal Activity of the Bilateral Medial Vestibular Nuclei Following Unilateral Labyrinthectomy in Rats

  • Park, Byung-Rim;Lee, Moon-Young;Kim, Min-Sun;Lee, Sung-Ho;Na, Han-Jo;Doh, Nam-Yong
    • The Korean Journal of Physiology and Pharmacology
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    • v.3 no.5
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    • pp.481-490
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    • 1999
  • To investigate the changes in the responses of vestibular neurons with time during vestibular compensation, the resting activity and dynamic responses of type I and II neurons in the medial vestibular nuclei to sinusoidal angular acceleration were recorded following unilateral labyrinthectomy (ULX) in Sprague-Dawley rats. The unitary extracellular neuronal activity was recorded from the bilateral medial vestibular nuclei with stainless steel microelectrodes of $3{\sim}5\;M{\Omega}$ before ULX, and 6, 24, 48, 72 hours, and 1 week after ULX under pentobarbital sodium anesthesia (30 mg/kg, i.p.). Gain (spikes/s/deg/s) and phase (in degrees) were determined from the neuronal activity induced by sinusoidal head rotation with 0.05, 0.1, 0.2, and 0.4 Hz. The mean resting activity before ULX was $16.7{\pm}8.6$ spikes/s in type I neurons $(n=67,\;M{\pm}SD)$ and $14.5{\pm}8.4$ spikes/s in type II neurons (n=43). The activities of ipsilateral type I and contralateral type II neurons to the lesion side decreased markedly till 24 hr post-op, and a significant difference between ipsilateral and contralateral type I neurons sustained till 24 hr post-op. The gain at 4 different frequencies of sinusoidal rotation was depressed in all neurons till 6 or 24 hr post-op and then increased with time. The rate of decrease in gain was more prominent in ipsilateral type I and contralateral type II neurons immediately after ULX. Although the gain of those neurons increased gradually after 24 hours, it remained below normal levels. The phase was significantly advanced in all neurons following ULX. These results suggest that a depression of activities in ipsilateral type I and contralateral type II neurons is closely related with the occurrence of vestibular symptoms and restoration of activities in those neurons ameliorates the vestibular symptoms.

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Analysis on PD Pulse Distribution by Defects Depending on SF6 Pressure (SF6 압력에 따른 결함별 부분 방전 펄스의 분포 분석)

  • Kim, Sun-Jae;Jo, Hyang-Eun;Jeong, Gi-Woo;Kil, Gyung-Suk;Kim, Sung-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.1
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    • pp.40-45
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    • 2015
  • Electrode systems: a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack in epoxy plate and a free particle (FP) were fabricated to simulate insulation defects in a gas insulated switchgear (GIS). $SF_6$ gas was filled in the electrode systems by 3 bar and/or 5 bar, respectively. Partial discharge (PD) pulses were detected through a $50{\Omega}$ non-inductive resistor. A calibration test was carried out according to IEC 60270, and the sensitivity was 0.25 pC/mV. PD pulses were distributed in the phase of $50^{\circ}{\sim}135^{\circ}$ and over 95% of them existed in the phase of $55^{\circ}{\sim}120^{\circ}$ for the POC. PD pulses were distributed in the phase of $230^{\circ}{\sim}310^{\circ}$ and over 90% of them existed in phase of $220^{\circ}{\sim}300^{\circ}$ for the POE. PD pulses occurred in the phase of $40^{\circ}{\sim}60^{\circ}$ and $220^{\circ}{\sim}300^{\circ}$ for the crack, and pulse counts were 25% higher in negative polarity than in positive polarity. PD pulses were distributed in every phase unlike to other three electrode systems and the peak magnitude was measured at $118^{\circ}$ and $260^{\circ}$ for the FP. As described above, PD pulses were observed in positive polarity for the POC, in negative one for the POE, in both one for the crack and the FP. In conclusion, it is expected that the identification rate of defect type can be improved by considering the polarity ratio of PD pulses on the PRPDA method.

Nonrandom Combination of Fatty Acid and Alcohol Moieties in Wax Esters from Liza Carinata Roe (등줄숭어 란유의 Nonrandom 분포를 한 왁스에스테르 조성에 관한 연구)

  • Joh, Yong-Goe;Lee, Kyeong-Hee;Cho, Yeon-Joo
    • Korean Journal of Food Science and Technology
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    • v.21 no.5
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    • pp.624-632
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    • 1989
  • Lipids of Liza carinata roe were extracted and separated into detailed lipid classes by column chromatography. About 57-62% of the total lipids consisted of wax esters in which saturated and unsaturated fatty alcohols combined with fatty acids with up to six double bonds. Between the even-numbered wax ester peaks in gas-liquid chromatography, ones with odd chain lengths such as C31, C33 and C35 were eluted in appreciable amounts. Isomers composed of different fatty acids and alcohols at a given chain length were not resolved on 1.5% OV-17 column. The principal component of wax esters in sample A were C32, C34 and C30 (45.0%, 19.2%, and 12.2%), followed by C36 and C38 length (9.5% and 4.7%), while those in sample B were mainly occupied by C34, C32 and C36 length (36.3%, 31.4% and 14.5%) with minor components C30 and C38 length (5.2%, and 3.4%). The wax esters were not a random combination of constituent fatty acids and alcohols. With increase in boiling temperature the wax esters increased slightly in viscosity over the unboiled, showing a tendency toward randomness, and finally were completely randomized at $360^{\circ}C$ for 40 minutes. The enzymes involved in wax ester biosynthesis seemed to have high selectivity for chain length of fatty acids and alcohols.

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The Base Catalyzed Synthesis of Sucrose Ester Containing Omega-3 Fatty Acids (오메가 3 지방산을 함유한 Sucrose Ester의 합성)

  • Shin, Jung-Ah;Jang, Ji-Sun;Hong, Jang-Hwan;Lee, Ki-Teak
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.35 no.9
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    • pp.1224-1231
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    • 2006
  • Sucrose esters were synthesized by transesterification of sucrose with docosahexaenoic acid ethylester mixture (DHAEE). Potassium carbonate as a base catalyst was used in the presence of dimethylsulfoxide (DMSO) for the reactions. The reactions were performed with the different reaction times and molar ratios of substrates in the presence of surfactant in vacuum. Among the reaction conditions in this study, SE#4~7 showed the relatively high conversion rate (>96%) of DHAEE, leading to the high yield of sucrose esters. In addition, the product composition was changed from sucrose mono ester to di/tri/polyesters after the prolonged reaction time while the increased molar ratio of DHAEE also resulted in the composition changes of sucrose mono ester to the sucrose di/tri/polyesters. From the reaction (SE#7), conversion ratio was 98.5% in which 87.3% mono ester and 13.7% di/tri/polyester were found, resulting in the highest content of mono ester. Therefore, the sucrose ester containing various rates of mono and di/tri/polyesters, which effects on hydrophilic lipophilic balance (HLB) values, can be manipulatively synthesized using the reaction conditions reported in this study.