• 전기학회논문지
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• 제67권3호
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• pp.406-412
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• 2018

This paper describes the fabrication process of laser induced graphene (LIG) and its transfer method on to a flexible and stretchable PDMS substrate. By irradiating CO2 laser on a polyimide(PI) film surface, a localized high temperature is created, resulting in a three-dimensional porous graphene network structure with good conductivity. This LIG electrode is relatively easy to fabricate and since it is very weak the LIG electrode was transferred to a flexible PDMS substrate to increase the sturdiness as well as possible use in flexible applications. Sheet resistance, thickness, and electrochemical activity of the fabricated in-situ LIG electrodes have been examined and compared with the LIG electrodes after transferring to PDMS elastomer. The properties of the LIG electrodes were also examined depending on the $CO_2$ laser power. As the irradiated laser power increased, the LIG electrode resistance decreases and the LIG electrode thickness increased. At 4.8 W of laser power, the average sheet resistance and thickness of the fabricated LIG electrodes were approximately $31.7{\Omega}/{\Box}$ and $62.67{\mu}m$, respectively. Moreover, the electrochemical activity of the fabricated LIG electrode at 4.8 W of laser power showed a high oxidation current of $28.2{\mu}A$ after transferring to PDMS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.160-160
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• 2016

In this study, we applied the low temperature curing Ag paste to replace PVD System. The electrode formation of low temperature curing Ag paste for silicon Hetero-junction solar cells is important for improving device characteristics such as adhesion, contact resistance, fill factor and conversion efficiency. The low temperature curing Ag paste is composed various additives such as solvent, various organic materials, polymer, and binder. it depends on the curing temperature conditions. The adhesion of the low temperature curing Ag paste was decided by scratch test. The specific contact resistance was measured using the transmission line method. All of the Ag electrodes were experimented at various curing temperatures within the temperature range of $160^{\circ}C-240^{\circ}C$, at $20^{\circ}C$ intervals. The curing time was also changed by varying the conditions of 10-50min. In the optimum curing temperature $200^{\circ}C$ and for 20 min, the measured contact resistance is $19.61m{\Omega}cm^2$. Over temperature $240^{\circ}C$, confirmed bad contact characteristic. We obtained photovoltaic parameter of the industrial size such as Fill Factor (FF), current density (Jsc), open-circuit voltage (Voc) and convert efficiency of up to 76.2%, 38.1 mA/cm2, 646 mV and 18.3%, respectively.

• 한국안전학회지
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• 제30권4호
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• pp.26-31
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• 2015

The purpose of this paper is to measure the induced voltage of the downscaled and simulated overhead ground wire of a 22.9kV-Y distribution line. This study performed a test of the downscaled and simulated distribution line according to whether it is grounded or not and the value of the ground resistance. In order to verify the reliability of the data measured by the test, the data was analyzed using the Minitab 17 program. It was found that the induced voltage of the downscaled and simulated distribution line is influenced by the value of the ground resistance. It was also found that the ground resistance obtained at a certain point is closely related to whether electric poles are grounded or not. The analysis results of the measured test data with a statistical method showed that the Anderson Darling (AD) was analyzed to be the smallest as 0.188 when the ground resistance of the electric poles had been maintained at $10{\Omega}$. In addition, the P value analyzed to be 0.894 which is in the proximity of the theoretical value of 1 and verified the reliability of the test data. It could be seen that the data measured by the downscaled simulation test forms a linear graph. It is thought that if a distribution line is installed in the same manner as the downscaled, simulated distribution line, the mean induced voltage will be reduced and reliability will be increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.13-16
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• 2008

Solid oxide fuel cell(SOFC) is an electrochemical energy conversion system with high efficiency and low-emission of pollution. In order to reduce the operating temperature of SOFC system under $800^{\circ}C$, the thickness reduction of YSZ electrolyte to be as thin as possible, e.g., less than 10 ${\mu}m$ are considered with the microstructure control and optimum design of unit cell. Methods for reducing the thickness of YSZ electrolyte have been investigated in coin cell. Moreover, a large unit cell($8cm{\times}8cm$) for SOFC was fabricated using an anode-supported electrolyte assembly with a thinner electrolyte layer, which was prepared by a tape casting method with a co-sintering technique. we studied the design factors such as active layer, electrolyte thickness, cathode composition, etc,. by the coin type of unit cell ahead of the fabrication process of a large unit cell and also reviewed about the evaluation technique of a large size unit cell such as interconnect design, sealing materials and current collector and so forth. Electrochemical evaluations of the unit cells, including measurements such as power density and impedance, were performed and analyzed. Maximum power density and polarization impedance of coin cell were 0.34W/$cm^2$ and $0.45{\Omega}cm^2$ at $800^{\circ}C$, respectively. However, Maxium power density of a large unit cell($5cm{\times}5cm$) decreased to 0.21W/$cm^2$ at $800^{\circ}C$ due to the increase of ohmic resistance. However, It was found that the potential value of a large unit cell loaded by 0.22A/$cm^2$ showed 0.76V at 100hrs without the degradation of unit cell.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

• Asian-Australasian Journal of Animal Sciences
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• 제24권9호
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• pp.1204-1210
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• 2011

Objective of this study was to examine the effect of sodium nitroprusside (SNP), a nitric oxide (NO) donor on steroid synthesis, growth and apoptosis of buffalo granulosa cells (GCs) in vitro. Follicular fluid of antral follicles (3-5 mm diameter) was aspirated and GCs were cultured in 0 (control), $10^{-3}$, $10^{-5}$, $10^{-7}$, $10^{-9}\;M$ of SNP for 48 h. To evaluate whether this effect was reversible, GCs were cultured in presence of $10^{-5}\;M$ SNP+1.0 mM $N^{\omega}$-nitro-L-arginine methyl ester (L-NAME) a NO synthase (NOS) inhibitor or hemoglobin (Hb, $1.0{\mu}g$) as NO scavenger. Nitrate/nitrite concentration was evaluated by Griess method, progesterone and estradiol concentrations by RIA and apoptosis by TUNEL assay. SNP ($10^{-3}$, $10^{-5}$, $10^{-7}\;M$) significantly (p<0.05) inhibited estradiol and progesterone synthesis, growth, disorganized GCs aggregates and induced apoptosis in a dose dependent manner. However, $10^{-9}\;M$ SNP induced the progesterone synthesis and stimulated GCs to develop into a uniform monolayer. Combination of SNP $10^{-5}$ M+L-NAME strengthened the inhibitory effect while, SNP+Hb together reversed these inhibitory effects. In conclusion, SNP at greater concentrations ($10^{-3}$, $10^{-5}$ and $10^{-7}\;M$) has a cytotoxic effect and it may lead to cell death whereas, at a lower concentration ($10^{-9}\;M$) induced progesterone synthesis and growth of GCs. These findings have important implications that NOS derived NO are involved at physiological level during growth and development of buffalo GCs which regulates the steroidogenesis, growth and apoptosis.

• 조명전기설비학회논문지
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• 제18권5호
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• pp.35-41
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• 2004

본 연구에서 사용된 방전 기체는 오염물의 제거 및 박막 표면 정제 등의 연구 분야에 응용되고 있는 질소 가스를 사용하였으며, 1차원 동심구 모델의 개발로 인하여, 접지 면적을 넓게 함에 따라 경방향으로의 플라즈마 분포가 중심축의 분포와 동일하다는 1차원적 가정이 적절하지 못하다는 Barnes 모델을 보완할 수 있었다. 일정한 인가 전압하에서는 입체각($\omega$)의 증가에 따라 질소 플라즈마를 구성하는 각 입자의 수밀도 분포, 전계 및 포텐셜이 감소함을 볼 수 있었다. 그러나 면적비가 증가하면서 구동 전극에서의 각 입자들의 움직임은 상대적으로 높은 전계로부터 더욱 활발하게 형성됨에 따라 직렬 연결된 블로킹 콘덴서에서 발생하는 자기 바이어스 전압은 증가하는 것을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.126.2-126.2
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• 2011

ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the substrate temperature. On the other hand, as seen in the FWHM decreased with increasing the substrate temperature. Since the FWHM of the (111) diffraction peak is inversely properties to the grain size of the film, then grain size of ZnS thin film increases with increasing the substrate temperature. The electrical resistivity and optical transmittance of the ZnS film as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $2.1{\times}10^{-3}\;{\Omega}cm$ and the transmittance increases to a maximum value of 80% of the ZnS film.