• Macromolecular Research
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• v.15 no.4
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• pp.337-342
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• 2007

The n-butyllithium-initiated ring-opening polymerization of ethylene oxide, in a mixture of benzene and dimethylsulfoxide (DMSO), between $25-45^{\circ}C$, with potassium tert-butoxide, is a useful and powerful method to control the molecular weight as well as achieve a quantitative chain-end functionalization yield of the resulting polymeric alkoxide via a one pot synthesis. The molecular weight of the product could be controlled by adjusting the ratio of grams of monomer to moles of initiators, such as n-butyllithium ([n-BuLi]) and potassium t-butoxide ([t-BuOK]). The yields for the macromonomer and ${\omega}-brominated$ poly(ethylene oxide) (PEO) were quantitative in relation to the chain-end functionalizations of the polymeric alkoxide formed. The resulting products were characterized by a combination of $^1H-NMR$ spectroscopic and size exclusion chromatographic analyses.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.94-98
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• 2011

A Sn-doped $In_2O_3$ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (< $540^{\circ}C$). The nanowire electrodes have large surface area compared with that of flat ITO thin film, and show low electrical resistivity of $5.6{\times}10^{-3}{\Omega}cm$ at room temperature. In order to apply ITO nanowires to the photoelectrodes of dye-sensitized solar cell (DSSC), those surfaces were modified by $TiO_2$ nanoparticles using a chemical bath deposition (CBD) method. The conversion efficiency of the fabricated $TiO_2$/ITO nanostructure-based DSSC was obtained at 1.4%, which was increased value by a factor of 6 than one without ITO nanowires photoelectrode. This result is attributed to the large surface area and superior electrical property of the ITO nanowires photoelectrode, as well as the structural advantages, including short diffusion length of photo-induced electrons, of the fabricated $TiO_2$/ITO nanostructure-based DSSC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.20-21
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• 2008

Ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) copolymer films were directly deposited on degenerated Si ($n^+$, 0.002 $\Omega{\cdot}cm$) using by dip coating method. A 1 ~ 3 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers using dip coating method for 10 seconds. After Post-Annealing in a vacuum ambient at 100~200 $^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by thermal evaporation through the shadow mask to complete the MFS structure. The ferroelectric $\beta$-phase peak of films, depending on the annealing temperature, started to show up around $125^{\circ}C$, and the intensity of the peak increased with increasing annealing temperature. Above $175^{\circ}C$, the peak started to decrease. The C-V characteristics were measured using a Precision LCR meter (HP 4284A) with frequency of 1MHz and a signal amplitude of 20 mV. The leakage-current versus electric-field characteristics was measured by mean of a pA meter/DC voltage source (HP 4140B).

• 유체기계공업학회:학술대회논문집
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• 2006.08a
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• pp.327-330
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• 2006

This paper represents the numerical analysis on effects of radius ratio in a concentric annulus with a rotating inner cylinder. The numerical model consisted of two cylinder which inner cylinder is rotating and outer cylinder is fix, and the axial direction is used the cyclic condition because of the length for axial direction is assumed infinite. The diameter of inner cylinder is assumed 86.8mm, the numerical parameters are angular velocity and radius ratio. Also, the whole walls of numerical model have no-slip and the working fluid is used water at $20^{\circ}C$. The numerical analysis is assumed the transient state to observe the flow variations by time and the 3-D cylindrical coordinate system. The calculation grid adopted a non-constant grid for dense arrangement near the wall side of cylinder, the standard $k-{\omega}$ high Reynolds number model to consider the effect of turbulence flow and wall, the fully implicit method for time term and the quick scheme for momentum equation. The numerical method is compared with the experimental results by Wereley and Lueptow, and the results are very good agreement. As the results, TVF isn't appeared when Re is small because of the initial flow instability is disappear by effect of the centrifugal force and viscosity. The vortex size is from 0.8 to 1.1 for TVF at various $\eta$, and the traveling distance for wavy vortex have the critical traveling distance for each case.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.37-45
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• 2002

In this paper, the microwave characteristics of traveling-wave electroabsorption coplanar waveguide modulator have been analyzed and optimized precisely by using the 3-dimensional finite-difference time-domain method (FDTD). Microwave characteristics are affected by the thickness of intrinsic layer, the width of meas, and the distance between signal electrode and ground electrode on traveling-wave type structure. In case that intrinsic layers are composed of InAsP/InGaP (1.3Q), the optimized distance between signal electrode and ground electrode, the optimized intrinsic region thickness and the width of waveguide are founded to be $3{\mu}m,\;039{\mu}m\;and\;2{\mu}m$, respectively, to minimize microwave loss and to obtain velocity and impedance matched structure. By using the FDTD, we could design the traveling-wave electroabsorption modulator more precisely.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.6
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• pp.5-8
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• 1975

An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4${\times}10^{-2}{\Omega}$ and $4.5\textrm{cm}^3$/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus.

• Progress in Medical Physics
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• v.3 no.1
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• pp.9-18
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• 1992

In this study, beta-eucryptite is fabricated and the thermal parameters of this material have been investigated. The thermoluminescence from 4MeV X-ray irradiated beta-eucryptite have been measured over the temperature range of 300K-600K. Thermoluminescence curve from X-ray irradiated beta-eucryptite shows five peaks located at 342K, 392K, 438K, 474K, and 527K. $\tau$, $\delta$ and $\omega$ of peak at 527K are 35K, 39K and 74K, respectively and this peak is found to be 2nd order kinetics. The activation energy of peak shape method is calculated to be 1.03eV and the frequency factor for 527K curve is calculated to be 3.9x10$\^$8/sec$\^$-1/. Based on the various heating rates methods, the activation energy of the peak is computed to be 1.02${\pm}$0.05eV that is similar to 1.19${\pm}$0.03eV of initial rise method. The linearity of thermoluminescence intensity and radiation flux is valid up to 50Gy and beyond higher dose the supralinearity and saturation come out.

• Journal of Environmental Science International
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• v.12 no.3
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• pp.265-274
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• 2003

The Pasquill-Gifford stability category is a very important scheme of the Gaussian type dispersion model defined the complex turbulence state of the atmosphere by A grade(very unstable) to F grade(very stable). But there has been made a point out that this stability category might decrease the predictability of the model because it was each covers a broad range of stability conditions, and that they were very site specific. The APSM (Air Pollution Simulation Model) was composed of the turbulent parameters, i.e. friction velocity(${\mu}$$\_$*/), convective velocity scale($\omega$$\_$*/) and Monin-Obukhov length scale(Ｌ) for the purpose of the performance increasing on the case of the unstable atmospheric conditions. And the PDF (Probability Density Function)model was used to express the vertical dispersion characteristics and the profile method was used to calculate the turbulent characteristics. And the performance assessment was validated between APSM and EPA regulatory models(TEM, ISCST), tracer experiment results. There were very good performance results simulated by APSM than that of TEM, ISCST in the short distance (<1415 m) from the source, but increase the simulation error(%) to stand off the source in others. And there were differences in comparison with the lateral dispersion coefficient($\sigma$$\_$y/) which was represent the horizontal dispersion characteristics of a air pollutant in the atmosphere. So the different calculation method of $\sigma$$\_$y/ which was extrapolated from a different tracer experiment data might decrease the simulation performance capability. In conclusion, the air pollution simulation model showed a good capability of predict the air pollution which was composed of the turbulent parameters compared with the results of TEM and ISCST for the unstable atmospheric conditions.