• Journal of Powder Materials
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• v.16 no.2
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• pp.138-145
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• 2009

The combination of focused ion beam (FIB) and 4 point probe nanomanipulator could make various nano manufacturing and electrical measurements possible. In this study, we manufactured individual ZnO nanowire devices and measured those electrical properties. In addition, tensile experiments of metallic Au and Pd nanowires was performed by the same directional alignment of two nanomanipulators and a nanowire. It was confirmed from I-V curves that Ohmic contact is formed between electrodes and nanomanipulators, which is able to directly measure the electrical properties of a nanowire itself. In the mechanical tensile test, Au and Pd nanowires showed a totally different fracture behavior except the realignment from <110> to <002>. The deformation until the fracture was governed by twin for Au and by slip for Pd nanowires, respectively. The crystallographic relationship and fracture mechanism was discussed by TEM observations.

• Journal of Biomedical Engineering Research
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• v.39 no.5
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• pp.220-228
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• 2018

The internal resistance of microbial fuel cell (MFC) using stainless steel skein for oxidizing electrode was investigated and the factors affecting the voltage generation were identified. We also investigated the effect of power management system (PMS) on the usability for MFC and the removal efficiency of organic pollutants. The performance of a stack microbial fuel cell connected with (PMS) or PMS+LED was analyzed by the voltage generation and organic matter reduction. The maximum power density of the unit cells was found to be $5.82W/m^3$ at $200{\Omega}$. The maximum current density was $47.53A/m^3$ without power overshoot even under $1{\Omega}$. The ohmic resistance ($R_s$) and the charge transfer resistance ($R_{ct}$) of the oxidation electrode using stainless steel skein electrode, were $0.56{\Omega}$ and $0.02{\Omega}$, respectively. However, the sum of internal resistance for reduction electrode using graphite felts loaded Pt/C catalyst was $6.64{\Omega}$. Also, in order to understand the internal resistance, the current interruption method was used by changing the external resistance as $50{\Omega}$, $300{\Omega}$, $5k{\Omega}$. It has been shown that the ohm resistance ($R_s$) decreased with the external resistance. In the case of a series-connected microbial fuel cell, the reversal phenomenon occurred even though two cells having the similar performance. However, the output of the PMS constantly remained for 20 hours even when voltage reversal occurred. Also the removal ability of organic pollutants (SCOD) was not reduced. As a result of this study, it was found that buffering effect for a certain period of time when the voltage reversal occurred during the operation of the microbial fuel cell did not have a serious effect on the energy loss or the operation of the microbial fuel cell.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.6-9
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• 2001

[ $SiO_2$ ] effect on the electrochemical properties of polymeric gel electrolytes(PGEs) reinforced with glass fiber cloth(GFC) was investigated . PGEs were composed of polyacrylronitrile(PAN), poly(vinylidenefluoride-co-hexafluoropropylene) (P(VdF-co-HFP)), $LiClO_4$ and three kind of plasticizer(ethylene carbonate, dietyl carbonate, propylene carbonate). $SiO_2$ was added to PGEs in the weight fraction of 10, 20, $30\%$ respectively. PGEs containing $SiO_2$ showed conductivity of over $10^{-3}S/cm\;at\;23^{\circ}C$ and electrochemical stability window to 4.8V. In the impedance spectra of the cells, which were constructed by lithium metals as electrodes, interfacial resistance increased due to growth of passivation layer during storage time and remarkable difference was not observed with content of $SiO_2$. In the impedance spectra of the lithium ion polymer batteries consisted of $LiClO_2$ and mesophase pitch-based carbon fiber(MCF), ohmic cell resistance of $SiO_2-free$ PGE was changed continuously with number of cycle, but those of $SiO_2-dispersed$ PGEs were not. Discharge capacity of the PGE containing $20wt\%\;SiO_2$ showed 132 mAh/g at 0.2C rate and $85\%$ of discharge capacity was retained at 2C rate.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.443-455
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• 2013

Electrochemical studies on charge transfer reactions across the interface between two immiscible electrolyte solutions (ITIES) have greatly attracted researcher's attentions due to their wide applicability in research fields such as ion sensing and biosensing, modeling of biomembranes, pharmacokinetics, phase-transfer catalysis, fuel generation and solar energy conversion. In particular, there have been extensive efforts made on developing sensing platforms for ionic species and biomolecules via gelifying one of the liquid phases to improve mechanical stability in addition to creating microscale interfaces to reduce ohmic loss. In this review, we will mainly discuss on the basic principles, applications and future aspects of various sensing platforms utilizing ion transfer reactions across the ITIES. The ITIES is classified into four types : (i) a conventional liquid/liquid interface, (ii) a micropipette supported liquid/liquid interface, (iii) a single microhole or an array of microholes supported liquid/ liquid interface on a thin polymer film, and (iv) a microhole array liquid/liquid interface on a silicon membrane. Research efforts on developing ion selective sensors for water pollutants as well as biomolecule sensors will be highlighted based on the use of direct and assisted ion transfer reactions across these different ITIES configurations.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.369-375
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• 2006

[ $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{x}Fe_{1-x}O_{3-{\delta}}$ ] [x=0.8, 0.2](BSCF) powders were synthesized by a Glycine-Nitrate Process (GNP) and the electrochemical performance of the BSCF cathode on a scandia stabilized zirconia, $[(Sc_{2}O_3)_{0.11}(ZrO_2)_{0.89}]-1Al_{2}O_3$ was investigated. In order to prevent unfavorable solid-state reactions between the cathode and zirconia electrolyte, a GDC ($Gd_{0.1}Ce_{0.9}O_{2-{delta}}$) buffer layer was applied on ScSZ. The BSCF (x = 0.8) cathode formed on GDC(Buffer)/ScSZ(Disk) showed poor electrochemical property, because the BSCF cathode layer peeled off after the heat-treatment. On the other hand, there were no delamination or peel off between the BSCF and GDC buffer layer, and the BSCF (x = 0.2) cathode exhibited fairly good electrochemical performances. It was considered that the observed phenomenon was associated with the thermal expansion mismatch between the cathode and buffer layer. The ohmic resistance of the double layer cathode was slightly lower than that of the single layer BSCF cathode due to the incorporation of platinum particle into the BSCF second layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.