• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.50-55
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• 2011

To enhance the performance of a MEA (membrane electrode assembly) in a polymer electrolyte membrane fuel cell (PEMFC), optimum contents of Nafion ionomer as electrolyte in the 20 and 40 wt% Pt/C used in electrodes were examined. Variety characterization techniques were applied to examine optimum Nafion contents: cell performance test, electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV). According to Pt wt% supported on carbon support, it has been observed that polarization, ohmic, and mass transfer resistances were changed so that the cell performance was significantly dependent on the content of Nafion ionomer. Optimum Nafion ionomer contents in the 20 wt% Pt/C and 40 wt% Pt/C were showed 35 wt% and 20 wt%, respectively. This is due to different surface area of the Pt/C catalyst, and formation of triple phase boundary seems to be affected by the Nafion contents.

• Ceramist
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• v.23 no.2
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• pp.184-199
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• 2020

The solid oxide fuel cells (SOFCs) are the one of the most promising energy conversion devices which can directly convert chemical energy into electric power with high efficiency and low emission. The lowering operating temperature below 800 ℃ has been considered as the mostly considerable research and development for commercialization. The major issue is to maintain reasonably high performance of SOFCs at reduced temperatures due to increment of polarization resistance of electrodes and electrolyte. Thus, the alternative materials with high catalytic activities and fast oxygen ion conductivity are required. For recent advances in electrolyte materials and technology, newly designed, highly conductive electrolyte materials and structural engineering of them provide a new path for further reduction in ohmic polarization resistance from electrolytes. Here, a powerful strategy of the bilayer concept with various oxide electrolytes of SOFCs are briefly reviewed. These recent developments also highlight the need for electrolytes with greater conductivity to achieve a high performance, thus providing a useful guidance for the rational design of cell structures for SOFCs. Moreover, cell design, materials compatibility, processing methods, are discussed, along with their role in determining cell performance. Results from state-of-the-art SOFCs are presented, and future prospects are discussed.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.2
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• pp.666-671
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• 2014

Using positive temperature coefficient (PTC) heater as supplementary heating for diesel engine vehicles with low heat source is a good method to enhance the heating performance during cold start. In this study, the PTC elements were made by using screen printing process for forming ohmic contact layer, and prototype of PTC heater was designed and made for a diesel engine vehicle. In process of designing the PTC heater, the thermal flow analysis of PTC element modules was conducted for verifying the effect of the shapes of contact surface between each of the components (cooling fin, insulator, ceramic element). We also investigated the performance characteristic (heating capacity, energy efficiency, pressure drop) of the PTC heater through the experiments. Therefore, the experimental results indicated that prototype of PTC heater had satisfactory performance. This study will be basis for improving the manufacturing process and increasing the performance of the PTC element and heater.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.571-574
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• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.290-295
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• 2000

In order to utilize as a pre-ionization means for reproducible ohmic plasma on KAIST-TOKAMAK, a simple, safe, economical and continuous microwave source has been developed using a home kitchen micro-wave oven. The magnetron used in the study can provide 500 W of power at 2.45 GHz. A conventional magnetron in a home kitchen microwave oven generates microwave for 8 ms at every 16 ms periodically due to the periodic (60 Hz) high voltage applied to the magnetron cathode. In order to generate continuous microwave which is suitable for tokamak pre-ionization, the magnetron operation circuit has been modified using a DC high voltage (5 kV, 1 A) power supply. It provides high-voltage with small ripple for magnetron cathode bias. Using the developed magnetron system, electron cyclotron resonace heated (ECH) plasmas were produced and the characteristics of the system were studied by diagnosing the ECH plasma using Langmuir probe and $H_{\alpha}$ emission diagnostics.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.33-33
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• 2000

일반적으로 GaN-based light emitting diodes(LEDs)는 Top layer위에 금속박막으로 contact을 형성하고 있으며 광소자 구성에 있어 빛은 이러한 금속 contact을 통과할 수 없다. 그러나 만약 이러한 contact이 투명전도막으로 구성될 수 있다면 보다 효율적인 광소자의 구성이 기대되어진다. 특히 GaN photodetector, GaN-based LEDs, GaN vertical cavity surface emitting lasers(VCSELs)등의 소자형성에 있어 투명전도막 contact은 매우 중요하며 그 응용에 앞서 기본적인 구조적, 전기적, 광학적 특성에 대한 연구가 반드시 선행되어져야 한다. 따라서 본 실험에서는 이러한 투명전도막으로써 Indium Tin Oxide(ITO)를 사용하였으며 박막형태의 contact으로 제조하여 n-GaN, p-GaN와 corning glass위에 e-beam evaporation법로써 제조하였다. 또한 각 n-, p-type과 corning glass위에 증착된 ITO박막의 구조적 특성을 분석하기 위하여 x-ray diffractometry(XRD)와 Auger electron spectroscopy(AES)등을 사용하였으며 전기적 특성을 측정하기 위하여 four point probe를 사용하였고 그들의 I-V 곡선을 측정하였다. 또한 UV spectrometry를 사용하여 그들의 광학적 특성을 측정하고자 하였다. ITO 박막의 제조에 있어 기판은 초음파 유기세정 후 HCl과 H2O2(1:1)의 혼합용액을 사용하여 GaO2를 제거하고자 하였으며 이후 초순수로 세척하여 사용하였다. 초기 진공도는 3$\times$10-5 Torr이하였으며 기판온도 50$0^{\circ}C$에서 0.6 /s의 증착속도로 약 2000 증착하였다. 이렇게 제조된 ITO 박막은 5$\times$10-5 Torr이하의 진공분위기에서 $600^{\circ}C$로 열처리를 실시하였으며 열처리 시간의 변화에 따른 그들의 전기적, 구조적, 광학적 특성을 측정하였다. 열처리 과정을 통한 ITO박막은 투과도는 420nm의 영역에서 80%이상을 나타내었으며 이때의 면저항은 약 50ohm/ 이었다. 또한 I-V 곡선 측정에 의한 contact특성의 측정결과 열처리 전의 ITO contact은 n-GaN와 n-GaN에 대해 각각 ohmic과 schottky contact의 일반적인 contact 특성을 나타내었다. 그러나 이러한 contact 특성은 열처리 시간의 변화에 따라 변화하는 것을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.501-506
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• 2019

To overcome the limitations of the conventional Ni anode-supported SOFCs, various types of ceramic anodes have been studied. However, these ceramic anodes are difficult to commercialize because of their low cell performances and difficulty in manufacturing anode-support typed SOFCs. Therefore, in this study, to use these ceramic anodes and take advantage of anode-supported SOFC, which can minimize ohmic loss from the thin electrolyte, we fabricated cathode support-typed SOFC. The cathode-support of LSCF-YSZ was prepared by the acid treatment of conventional Ni-YSZ (Yttria-stabilized Zirconia) anode-support, followed by the infiltration of LSCF to YSZ scaffold. The composite of $La(Sr)Ti(Ni)O_3$ and $Ce(Mn,Fe)O_2$ was used as the ceramic anode. The fabricated cathode-supported button cell showed a relatively low power density of $0.207Wcm^{-2}$ at $850^{\circ}C$; however, it is expected to show better performance through the optimization of the infiltration rate and thickness of LSCF-YSZ cathode-support layer.