• Journal of the Korean Ceramic Society
• /
• v.42 no.10 s.281
• /
• pp.665-671
• /
• 2005

LSGM is known to show very serious interfacial reaction with other unit cell components, such as electrode, electrode functional or buffering layers. Especially, the formation of very resistive LaSr$Ga_{3}$$O_{7}$ phase at the interface of an anode and an electrolyte is the most problematic one in LSGM-based SOFCs. In this study, we investigated the interfacial reactions in LSGM-based SOFCs under different unit cell configurations. According to the microstructural analysis on the interfacial layer between an electrolyte and its neighboring component, serious interfacial reaction zone was observed. From the electrical and electrochemical characterization of the cell, we found such an interfacial reaction zone not only increased the internal ohmic resistance but also decreased the OCV(Open Cell Voltage) of the unit cell, and thus consequently deteriorated the unit cell performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.123-127
• /
• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.11
• /
• pp.1646-1649
• /
• 2012

The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.54.1-54.1
• /
• 2010

산화물 기반의 TFT는 유리, 금속, 플라스틱 등 기판 종류에 상관없이 균일한 제작이 가능하며, 상온 및 저온에서 대면적으로 제작이 가능하고, 저렴한 비용으로 제작 가능하다는 장점 때문에 최근 많은 연구가 이루어지고 있다. 현재 TFT 물질로 많이 연구되고 있는 산화물은 ZnO (3.4 eV)나 InOx (3.6 eV), GaOx (4.9 eV), SnOx(3.7 eV)등의 물질과 각각의 조합으로 구성된 재료들이 주로 사용되고 있으며, 가장 많은 연구가 이루어진 ZnO 기반의 TFT는 mobility와 switching 속도에서 우수한 특성을 보이나, 트렌지스터의 안정성이 떨어지는 것으로 보고 되고 있다. 그러나 IGZO 물질의 경우 결정학적으로 비정질이며 상온 및 저온에서 대면적으로 제작이 가능하고, 높은 전자 이동도의 특성을 가지고 있는 장점 때문에 최근 차세대 산화물 트렌지스터로 각광받고 있다. IGZO TFT 소자의 경우 Ag, Au, In, Pt, Ti, ITO 등 다양한 전극 물질이 사용되고 있는데, 이들 중 active channel과 ohmic contact을 이루는 Al, Ti, Ag의 적용을 통해 향상된 성능을 얻을 수 있다. 하지만 이들 전극 재료는 TFT 소자 제작시 필수적인 열처리 공정에 노출되면서 active channel 과 전극 사이 계면에 문제점을 야기할 수 있다. 특히, Ti의 경우 산화가 잘되기 때문에 전극계면에 TiO2를 형성하여 contact resistance의 큰 영향을 미치는 것으로 보고 되고 있다. 본 연구에서는 ohmic 전극재료인 Ti 또는 Ti/Au를 적용하여 TFT 소자 제작 및 특성에 대한 평가를 진행했으며, 열처리에 따른 전극과 IGZO 계면 사이의 미세구조와 전기적인 특성간의 상관관계를 연구하였다. 이를 통해, 소자 제작 공정을 최적화하고 신뢰성 있는 소자 특성을 얻을 수 있었다.

• Korean Journal of Materials Research
• /
• v.30 no.10
• /
• pp.502-508
• /
• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Korean Journal of Materials Research
• /
• v.9 no.5
• /
• pp.496-502
• /
• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.

• Journal of the Korean Vacuum Society
• /
• v.14 no.3
• /
• pp.147-152
• /
• 2005

The structural evolution of $Ni(400\;\AA)/Au(400\;\AA)$ films on p-type GaN during thermal oxidation in ai. was investigated by in situ x-ray scattering experiments. These results indicate that Ni layer and Au layer intermix during thermal oxidation. Au-rich solid solutions containing the different amount of Ni atoms are formed during oxidation. The Ni atoms in Au-rich solid solution out-diffuse as the oxidation proceeds resulting in the formation of NiO(111) phase. Despite of the complete oxidation at $650^{\circ}C$, the position of bulk Au(111) diffraction profile indicates that small amount of Wi atoms are still incorporated in the Au phase.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.2
• /
• pp.47-49
• /
• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.55-55
• /
• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• 한국태양에너지학회:학술대회논문집
• /
• 2011.04a
• /
• pp.105-110
• /
• 2011

The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.