• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.201-201
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• 2010

볼로미터 제작 공정 중 One step via 공정 시 via hole 모양에 의해 정기적 연결 및 구조적 안정성에 문제를 해결하기 위하여 다른 via 식각 방식으로 공정을 진행하였으며 그에 따른 via 공정 차이에 대한 결과를 연구하였다.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1381-1387
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• 1989

For the fabrication of ohmic contact to p-type GaAs, In Liquid Metal Ions were implanted into p-type GaAs (Zn:1.5x10**19/cm**3). After the samples were processed by Infrared rapid thermal annealing (IRTA0 or Furance Annealing (FA), I-V and specific contact contact resistivity were measured. Specific contact resistivity was found to be 1.7x10**-5 \ulcorner-cm\ulcornerin IRTA 750\ulcorner, 10 sec annealed sample. The surface characteristics of the samples were investigated with SEM, RHEED, AES. From these results we can know that implanted In ions were formed mixing layer of InAs at the surface.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권3호
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• pp.107-115
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• 2002

This parer presents the analysis of hot gas flow in puffer-type circuit breakers using FVFLIC method. For the analysis of arc-flow interaction, the flow field is analyzed from the equations of conservation for mass, momentum and energy with the assumption of local thermodynamic equilibrium state. The arc is represented as the energy source term composed of ohmic heating and radiation term in the energy conservation equation. Ohmic heating is computed by the electric field analysis only within the conducting plasma region. An approximate radiation transport model is employed for the evaluation of emission and absorption of the radiation. The analysis method was applied to the real circuit breaker model and simulation results such as pressure rise and arc voltage were compared with the experimental ones.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.945-951
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• 1997

Inorder to investigated electrical conduction characteristics of silicone oils due to viscosity variation we studied the electrical conduction properties at temperature range of 10~110[$^{\circ}C$] and electrical field from 1 to 1.33$\times$10$^4$[V/cm] The viscosity of used specimens was low viscous(1, 2, 5[cSt]) silicone oils. It was shown the ohmic conduction characteristics in low temperature and low field by Ion dipole and humidity included specimen. And we known the conduction mechanism due to electron injection by Schottky's effect in the high temperature an d high field region.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.139-142
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• 2009

In this study, the performance degradation of SOFC single cell caused by the delamination between a cathode and an electrolyte is investigated. As the delamination rate increases, the voltage sharply decreases due to the decrease of reaction sites and losses increase. The current is concentrated to the intact area so that the current density is increased and the ohmic loss and the activation loss become higher. Most part of loss is due to the ohmc loss of electrolyte.

• 한국전기전자재료학회논문지
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• 제14권4호
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• pp.263-268
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• 2001

This paper describes the effects of applied bias conditions on electrochemical etch-stop characteristics. THere are a number of key issues such as diode leakage and ohmic losses which arise when applying the conventional 3-electrochemical etch-stop to fabricated some of he MEMS(microelectro mechanical system) and SOI(Si-on-insulator) structures which employ SDB(Si-wafer direct bonding). This work allows to perform anin situ diagnostic to predict whether or not an electrochemical etch-stop would fail due to diode-leakage-induced premature passivation. In addition, it presents technology which takes into account the effects of ohmic losses and allows to calculate the appropriate bias necessary to obtain a successful electrochemical etch-stop.

• 대한전자공학회논문지
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• 제27권4호
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• pp.555-562
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• 1990

Alloyed ohmic contact properties of Au-Zn/Au, Au-Be/Au,Au-Zn/Cr/Au, and Au-Be/Cr/Au metal system to p-InP were investigated. Optimum alloying conditions were obtained at the annealing temperature of 425\ulcorner for all the metal systems using a rapid thermal annealing system. Surface AES analysis and auger depth profiling were done for each metal system annealed at the optimum conditions. Outdiffusions of In and P from the InP substrate were found in the metal systems without Cr intermediate layer. Also, small amount of In. P and Cr were detected at the surface in the case of Au-Zn/Cr/Au system, while there were occured no outdiffusion of In, P, and Cr for Au-Be/Cr/Au system. The best surface morpholoty and specific contact resistivity of 4.5x 10**-5 \ulcornercm\ulcornerhave been obtained in this Au-Be/Cr/Au material system alloyed at 425\ulcorner for 60 second.

• Journal of the Optical Society of Korea
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• 제2권1호
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• 대한전자공학회논문지
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• 제26권12호
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• pp.1995-2000
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• 1989

The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제3B권3호
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• pp.115-121
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• 2003

This paper proposes a radiation model, which considers radiation transport as an important component in hot gas analysis. This radiation model is derived from combining the method of partial characteristics (MPC) with net emission coefficient (NEC), and it covers the drawbacks of existing models. Subsequently, using this proposed model, the arc-flow interaction in an arcing chamber can be efficiently computed. The arc is represented as an energy source term composed of ohmic heating and the radiation transport in the energy conservation equation. Ohmic heating term was computed by the electric field analysis within the conducting plasma region. Radiation transport was calculated by the proposed radiation model. Also, in this paper, radiation models were introduced and applied to the gas circuit breaker (GCB) model. Through simulation results, the efficiency of the proposed model was confirmed.