• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.53-53
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• 1999

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.58-58
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• 1999

• 한국어업기술학회:학술대회논문집
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• 한국어업기술학회 1997년도 수산관련공동학술대회발표요지집
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• pp.178-179
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제9회 학술발표회 논문개요집
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• pp.36-36
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• 1995

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.34-34
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.152-152
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• 1998

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.151-151
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• 1998

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.556-559
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• 2003

본 연구에서는 각종 산업 현장의 라인에 긴급 정지 장치로 병설되는 풀 코드 스위치의 동작위치를 판별하는 시스템에 대하여 다룬다. 본 논문에서는 스위치에 일정한 ohmic 저항을 삽입하고 스위치의 연결 상태에 따라 저항값이 변하는 것을 검출하여 어느 스위치가 동작했는지 판별하는 방안을 제시한다. 또, 본 연구에서는 인식률을 제고하기 위한 회로구성을 제안하고 전형적인 특성을 보이며, 동작된 스위치의 위치를 PLC에서 인식할 수 있는 장치를 개발하는 것이 목적이다.

• 한국수소및신에너지학회논문집
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• 제20권4호
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• pp.283-290
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• 2009

This study focuses on the performance characteristics of polymer electrolyte membrane fuel cell (PEMFC) using the AC impedance technique. The experiment was carried out to investigate the optimal operating conditions of PEMFC such as cell temperature, flow rate, humidified temperature and back-pressure. The fuel cell performance was analyzed by DC electronic-loader with constant voltage mode and expressed by voltage-current density. Additionally, AC impedance was measured to analysis of ohmic and activation loss and expressed by Nyquist plot. The results showed that the cell performance increased with increase of cell temperature, air flow rate, humidified temperature and backpressure. Also, the activation loss decreased as the increase of cell temperature, air flow rate, humidified temperature and backpressure.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.546-550
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• 2002

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.