• Journal of Korean Society of Transportation
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• v.25 no.3
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• pp.45-54
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• 2007

Aggressive driving is defined as 'driving behavior which intentionally incurs danger and distress to other drivers and passengers'. It increases the possibility of traffic accidents. Also, it threatens lives of drivers ana passengers and brings social and economic harm. According to previous studies. these aggressive behaviors are affected by not only the personality of drivers but also psychosocial factors, such as attitude, aggressive intention, time pressure, and traffic situations, However, most studies on aggressive behaviors conducted with field studies and surveys suggest correlation, not causal relationship. Therefore, in the current study tue authors measured individual factors-the driver's intention for aggressive driving and manipulated time pressure-to examine the interaction effects. As a result. the difference between conditions was significant depending on the level of aggressive intention and time pressure. These differences were also significant depending on the types of aggressive driving behaviors. In particular, the interaction effect of the driver's intention and time pressure on improper passing (cutting drivers off when passing) was significant. Finally the limitations of the current study and implications or using a car simulator are discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.38-46
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• 1999

o.25${\mu}m$ T-shaped gate P-HEMT is fabricated and used for design of X0band three stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA). The fabricated P-HEMT exhibits an extrinsis transconductance of 400mS/mm and a drain current of 400mA/mm. The RF and noise characteristics show that the current gain cut off frequency is 65GHz and minimum noise figure(NFmin) of 0.7dB with an associated gain of 14.8dB at 9GHz. In the design of the three stage LNA, we have used the inductive series feedback circuit topology with the short stub. The effects of series feedback to the noise figure, the gain, and the stability have been investigated to find the optimal short stub length. The designed three staage LNA showed a gain of above 33dB, a noise figure of under 1.2dB, and ainput/output return loss of under 15dB and 14dB, respectively. The results show that the fabricated P-HEMT is very suitable for a X-band LNA with high gain.

• Culinary science and hospitality research
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• v.22 no.7
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• pp.203-221
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• 2016

This study aims to analyze the impact of servicescape on the perceived values and brand attitude of coffee customers. In order to archive our research objects, current study employed SPSS 22.0 statistal program. The summary is as follows. First, it was revealed that the servicescape of coffee shops has a positive influence on perceived value. Second, the servicescape of coffee shop has a positive influence on brand attitude. And perceived value of the customer has a positive impact on customer brand attitude. Based on the results, this research has concluded some theoretical suggestions as follows. First, in case of brand coffee shop, it was analyzed that the attractions of interior design color, floor and wall interior, and structure has influenced on the differentiated values of customers. Also, the accessability shows that the brand coffee shops with parking facilities along with the convenience provided by the off-site facilities make customers highly recognize the brand values. In addition, the results found that the factor of service condition becomes a determining factor. Thus, current study will contribute to consider the various elements of service scape when new business develop as well as redesign the previous stores.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.537-539
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• 2006

We developed an 4.5" $192{\times}64$ active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is $800{\mu}m$ and $10{\mu}m$ respectively and the driving OTFT has $1200{\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5\;cm^2/V{\cdot}sec$, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.7-12
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• 2004

In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.

• Journal of Preventive Medicine and Public Health
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• v.29 no.2 s.53
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• pp.347-357
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• 1996

Although occupational low back pain accounts for $20\sim40%$ of all occupational illness and injury, there are limited numbers of studies regarding the effectiveness of back school program. The objective of this study was to evaluate the economic benefit of back school program for early return to work of occupational low back pain patients in the current occupational injury compensation and management system. The cost-benefit analysis in this study was conducted to evaluate the relative magnitude of benefit to cost. The total cost was estimated by calculating the value of components in back school program according to governmental budget protocol. The back school program was consisted of three major approaches, pain center, work-hardening program and funcional restoration program and each of components had various facilities and experts. The total amount of cost was estimated as 250,866,220 won per year. The most promising type of back school program were quite intensive (a 3 to 5-week stay in a specialized center), therefore, if we adopted the 5-week stay course, 10 courses could be held in a year. Following to the medical act, 20 patients per doctor could participate in a each course, ie, total 200 patients in a year. As a result, we could estimate the cost of 1,254,331 won a patient. We estimated the benefit by using data of a few local labor offices about average medical treatment beneficiary and off-duty beneficiary of 46 occupational low back pain patients in 1994. Ullman and Larsson (1977) mentioned that the group of chronic low back pain patients who participated in back school program needed less time to recover by 48.4% of beneficiary duration. And in the trying to estimate the benefit, we asked 10 rehabilitation board certificate doctors about reduction proportion of treatment cost by introducing back school program. The answered reduction proportions were in the range of $30\sim45%$, average 39%. As a final result, we could see that the introduction of back school program in treatment of chronic occupational low back pain patients could produce the benefit to cost ratio as 3.90 and 6.28. And we could conclude that the introduction of back school program was beneficial to current occupational injury compensation and management system.

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.2
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• pp.184-190
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• 2008

Various ECT techniques have been applied basically to assess the integrity of steam generator tithing in nuclear power plant. Among these techniques, the bobbin probe technique is applied generally to examine the volumetric flaws such as a crack-like defect and wear which is generally occurred on steam generator tubing, and additionally MRPC probe is used to examine closely tile top of tubesheet and bending regions due to the high possibility of cracking. Dent and bulge also may be formed on tube during installation process and operation of steam generator, but the dent and bulge indications greater than specific size criteria are recorded on examination report because these indications are not considered as flaw. These indications can be easily detected with bobbin probe and approximately sized with profile bobbin probe, but the size and shape can not be accurately verified. Accordingly, in this study, the $8{\times}1$ multi-array EC probe was designed to increase the measurement accuracy of the sectional profiling EC testing of tube. As a result, we would like to propose the application of $8{\times}1$ multi-array EC probe for the measurement of size and shape of profile change on steam generator tube in OPR-1000 nuclear power plant.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.18-24
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• 2002

n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.105-111
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• 2004

In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.