• 제목/요약/키워드: Off-current

검색결과 2,261건 처리시간 0.032초

2006년 하계 울진 연안 해류의 변동성 (Variability of the Coastal Current off Uljin in Summer 2006)

  • 이재철;장경일
    • Ocean and Polar Research
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    • 제36권2호
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    • pp.165-177
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    • 2014
  • In an effort to investigate the structure and variability of the coastal current in the East Sea, a moored ADCP observation was conducted off Uljin from late May to mid-October 2006. Owing to the transition of season from summer to autumn, the features of the current and wind can be divided into two parts. Until mid-August (Part-I), a southward flow is dominant at all depths with a mean alongshore velocity of 4.2~8.9 cm/s but northward winds are not strong enough to reverse the near-surface current. During Part-II, a strong northward current occurs frequently in the upper layer but winds are predominantly southward including two typhoons that have deep-reaching influence. Profile of mean velocity has three layers with a northward velocity embedded at 12~28 m depth. The near-surface current of Part-II significantly coheres with winds at 4-8 day periods with a phase lag of about 12 hours. The modal structure of the current obtained by EOF analysis is: (1) Mode-1, having 83.6% of total variance, represents the current in the same direction at all depths corresponding to the southward North Korean Cold Current (NKCC). (2) Mode-2 (11.7%) reveals a two-layer structure that can be explained by the northward East Korean Warm Current (EKWC) in the upper layer and NKCC in the lower. (3) Mode-3 (2.6%) has three layers, in which the EKWC is reversed near the surface by opposing winds. This mode is particularly similar to the mean velocity profile of Part-II.

수소발생용 Ni-Zn-Fe 합금 전극의 간헐적 작동에 따른 비활성화 특성 (Intermittent Operation Induced Deactivation Mechanism for HER of Ni-Zn-Fe Electrode for Alkaline Electrolysis)

  • 한지민;김종원;배기광;박주식;정성욱;정광진;강경수;김영호
    • 한국수소및신에너지학회논문집
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    • 제31권1호
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    • pp.8-22
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    • 2020
  • In this study, we investigated the deactivation characteristics of Ni-Zn-Fe electrodes due to intermittent operation in alkaline water electrolysis. To find suitable method to accelerate deactivation of electrode, the accelerated stress-test (AST) which repeated on/off step was performed with constant current/voltage control. The AST under constant voltage control is suitable to deactivate electrode so it were selected to investigate deactivation of electrode. The AST which repeated on/off step in range of -1.3 V and 0 V was performed and the relationship between oxidation current and electrode deactivation in the off step was investigate. As results, it was confirmed that the nickel and zinc on electrode surface were oxidized due to anodic current which occurred at off step.

해상풍력단지에서의 PMSG 풍력발전기를 활용한 계통연계점 불평형 전원 보상 (Compensation of Unbalanced PCC Voltage in an Off-shore Wind Farm of PMSG Type Turbines)

  • 강자윤;한대수;서용석;정병창;김정중;박종형;최영준
    • 전력전자학회논문지
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    • 제20권1호
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    • pp.1-10
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    • 2015
  • This paper proposes a control algorithm for permanent magnet synchronous generators with a back-to-back three-level neutral-point clamped voltage source converter in a medium-voltage off-shore wind power system under unbalanced grid conditions. Specifically, the proposed control algorithm compensates for unbalanced grid voltage at the PCC (Point of Common Coupling) in a collector bus of an off-shore wind power system. This control algorithm has been formulated based on symmetrical components in positive and negative synchronous rotating reference frames under generalized unbalanced operating conditions. Instantaneous active and reactive power is described in terms of symmetrical components of measured grid input voltages and currents. Negative sequential component of AC input current is injected into the PCC in the proposed control strategy. The amplitude of negative sequential component is calculated to minimize the negative sequential component of grid voltage under the limitation of current capability in a voltage source converter. The proposed control algorithm enables the provision of balanced voltage at the PCC resulting in the high quality generated power from off-shore wind power systems under unbalanced network conditions.

Spatial and Temporal Aspects of Phytoplankton Blooms in Complex Ecosystems Off the Korean Coast from Satellite Ocean Color Observations

  • Ahn, Yu-Hwan;Shanmugam, Palanisamy;Chang, Kyung-Il;Moon, Jeong-Eon;Ryu, Joo-Hyung
    • Ocean Science Journal
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    • 제40권2호
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    • pp.67-78
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    • 2005
  • Complex physical, chemical and biological interactions off the Korean coast created several striking patterns in the phytoplankton blooms, which became conspicuous during the measurements of ocean color from space. This study concentrated on analyzing the spatial and temporal aspects of phytoplankton chlorophyll variability in these areas using an integrated dataset from a Sea-viewing Wide Field-of-view Sensor (SeaWiFS), Advanced Very High Resolution (AVHRR) sensor, and Conductivity Temperature Depth (CTD) sensor. The results showed that chlorophyll concentrations were elevated in coastal and open ocean regions, with strong summer and fall blooms, which appeared to spread out in most of the enclosed bays and neighboring waters due to certain oceanographic processes. The chlorophyll concentration was observed to range between 3 and $54\;mg\;m^{-3}$ inside Jin-hae Bay and adjacent coastal bays and 0.5 and $8\;mg\;m^{-3}$ in the southeast sea offshore waters, this gradual decrease towards oceanic waters suggested physical transports of phytoplankton blooms from the shallow shelves to slope waters through the influence of the Tsushima Warm Current (TWC) along the Tsushima Strait. Horizontal distribution of potential temperature $(\theta)$ and salinity (S) of water off the southeastern coast exhibited cold and low saline surface water $(\theta and warm and high saline subsurface water $({\theta}>12^{\circ}C; S>34.4)$ at 75dBar, corroborating TWC intrusion along the Tsushima Strait. An eastward branch of this current was called the East Korean Warm Current (EKWC), tracked with the help of CTD data and satellite-derived sea surface temperature, which often influenced the dynamics of mesoscale anticyclonic eddy fields off the Korean east coast during the summer season. The process of such mesoscale anticyclonic eddy features might have produced interior upwelling that could have shoaled and steepened the nutricline, enhancing phytoplankton population by advection or diffusion of nutrients in the vicinity of Ulleungdo in the East Sea.

수직전류 인가형 나노 스핀소자의 제조 및 자기저항 특성 (The Fabrication and Magnetoresistance of Nanometer-sized Spin Device Driven by Current Perpendicular to the Plane)

  • 전명길;이현정;정원용;김광윤;김철기
    • 한국자기학회지
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    • 제15권2호
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    • pp.61-66
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    • 2005
  • 서브 마이크론 크기의 셀을 제조하기 위하여 종래의 방식인 전체시료구조를 증착한 후 이온밀링 방식으로 제조하는 대신에 Pt 스텐실 마스크 공정과 e-beam 리소 및 습식 식각 공정을 이용하여 배치형 submicron 셀을 lift-off 방식으로 제조하였다. $500nm{\times}500 nm,\;200nm{\times}300 nm$ 크기에 $CoFe(30 {\AA})/Cu(100{\AA})/CoFe(120{\AA}$) 3층 구조를 셀내에 증착하고 수직전류를 인가하여 자기저항 특성을 조사하였다. 자기저항 특성은 두 자성층의 보자력 차이를 이용하여 스핀의 반평형 구조를 유도하여 슈도 스핀밸브이며 각 셀의 크기에서 1.1, $0.8{\%}$의 자기저항비가 얻어졌다. 또한 전류인가에 따른 저항변화로부터 스핀전달 효과에 따른 스위칭 변화가 일어남을 확인하였으며, 이 구조에서 저항의 변화로부터 측정된 임계전류밀도는 약 $7.65{\times}10^{7}A/cm^2$였다.

Effects of multi-stacked hybrid encapsulation layers on the electrical characteristics of flexible organic field effect transistors

  • 설영국;허욱;박지수;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.257-257
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    • 2010
  • One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

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10 nm이하 비대칭 이중게이트 MOSFET의 하단 게이트 전압에 따른 터널링 전류 분석 (Analysis of Tunneling Current for Bottom Gate Voltage of Sub-10 nm Asymmetric Double Gate MOSFET)

  • 정학기
    • 한국정보통신학회논문지
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    • 제19권1호
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    • pp.163-168
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    • 2015
  • 본 연구에서는 10 nm이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 하단 게이트 전압에 대한 터널링 전류(tunneling current)의 변화에 대하여 분석하고자한다. 단채널 효과를 감소시키기 위하여 개발된 다중게이트 MOSFET중에 비대칭 이중게이트 MOSFET는 채널전류를 제어할 수 있는 요소가 대칭형의 경우보다 증가하는 장점을 지니고 있다. 그러나 10nm 이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 경우, 터널링 전류에 의한 차단전류의 증가는 필연적이다. 본 연구에서는 차단전류 중에 터널링 전류의 비율을 계산함으로써 단채널에서 발생하는 터널링 전류의 영향을 관찰하고자 한다. 포아송방정식을 이용하여 구한 해석학적 전위분포와 WKB(Wentzel-Kramers-Brillouin) 근사를 이용하여 터널링 전류를 구하였다. 결과적으로 10 nm이하의 채널길이를 갖는 비대칭 이중게이트 MOSFET에서는 하단 게이트 전압에 의하여 터널링 전류가 크게 변화하는 것을 알 수 있었다. 특히 채널길이, 상하단 산화막 두께 그리고 채널두께 등에 따라 매우 큰 변화를 보이고 있었다.

Z-source 직류 차단기의 기계식 스위치 적용을 위한 최적화 설계 (Optimization Design for the Use of Mechanical Switch in Z-source DC Circuit Breaker)

  • 이현승;이건아
    • 한국안전학회지
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    • 제37권1호
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    • pp.12-19
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    • 2022
  • Circuit breakers are a crucial factor in ensuring the safety of a Direct Current (DC) grid. One type of DC circuit breaker, the Z-source DC circuit breaker (ZCB), uses a thyristor, which is a type of semiconductor switch. In the event of a fault in the circuit, the ZCB isolates the fault by generating a zero crossing current in the thyristor. The thyristor quickly and actively isolates the fault while generating a zero crossing current, but thyristor switch cannot control turn-off and the allowable current is lower than the current of the mechanical switch. Therefore, it is best to use a mechanical switch with a high allowable current capacity that is capable of on/off control. Due to the slow reaction time of mechanical switches, they may not isolate the fault during the zero crossing current time interval created by the existing circuit. In this case, the zero crossing current time can be increased by using the property that hinders the rapid change in the current of the inductor. This paper will explore whether adding system inductance to increase the zero crossing current time interval is a solution to this problem. The simulation of changing inductor and capacitor (LC) of the circuit is repeated to find an optimal change in the zero crossing current time according to the LC change and provides an inductor and capacitor range optimized for a specific load. The inductor and capacitor range are expected to provide optimization information in the form LC values for future applications of ZCB's using a mechanical switch.

비대칭 DGMOSFET의 상하단 산화막 두께비에 따른 터널링 전류 분석 (Analysis of Tunneling Current of Asymmetric Double Gate MOSFET for Ratio of Top and Bottom Gate Oxide Film Thickness)

  • 정학기
    • 한국정보통신학회논문지
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    • 제20권5호
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    • pp.992-997
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    • 2016
  • 본 논문에서는 단채널 비대칭 이중게이트 MOSFET의 상하단 산화막 두께비에 대한 터널링 전류의 변화에 대하여 분석하고자 한다. 채널길이가 5 nm까지 감소하면 차단전류에서 터널링 전류의 비율이 크게 증가하게 된다. 이와 같은 단채널효과는 상하단 게이트 산화막 구조를 달리 제작할 수 있는 비대칭 이중게이트 MOSFET에서도 발생하고 있다. 본 논문에서는 상하단 게이트 산화막 두께비 변화에 대하여 차단전류 중에 터널링 전류의 비율 변화를 채널길이, 채널두께, 도핑농도 및 상하단 게이트 전압을 파라미터로 계산함으로써 단채널에서 발생하는 터널링 전류의 영향을 관찰하고자 한다. 이를 위하여 포아송방정식으로부터 해석학적 전위분포를 구하였으며 WKB(Wentzel-Kramers-Brillouin)근사를 이용하여 터널링 전류를 구하였다. 결과적으로 단채널 비대칭 이중게이트 MOSFET에서는 상하단 산화막 두께비에 의하여 터널링 전류가 크게 변화하는 것을 알 수 있었다. 특히 채널길이, 채널두께, 도핑농도 및 상하단 게이트 전압 등의 파라미터에 따라 매우 큰 변화를 보이고 있었다.

낮은 Subthreshold 누설전류를 갖는 CMOS 논리회로 (CMOS Logic Circuits with Lower Subthreshold Leakage Current)

  • 송상헌
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권10호
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    • pp.500-504
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    • 2004
  • We propose a new method to reduce the subthreshold leakage current. By moving the operating point of OFF state MOSFETs through input-controlled voltage generators, logic circuits with much lower leakage current can be built with few extra components. SPICE simulation results for the new inverter show correct logic results without speed degradation compared to a conventional inverter.