• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.759-762
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• 2002

A ZCT(Zero Current Transition) PWM(Pulse-Width-Modulation) boost converter using parallel MOSFET switch is proposed in this paper. The IGBT(main switch) of the proposed converter is always turned on with zero current switching and turned off with zero current/zero voltage switching. The MOSFET(auxiliary switch) is also operates with soft switching condition. In addtion to, the proposed converter eliminates the reverse recovery current of the freewheeling diode by adding the resonant inductor, Lr, in series with the main switch. Therefore, the turn on/turn off switching losses of switches are minimized and the conduction losses by using IGBT switch are reduced. In addition to, using parallel MOSFET switch overcomes the switching frequency limitation occurred by current tail. As mentioned above, the characteristics are verified through experimental results.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.256-262
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• 2018

This study introduces a novel Soft Switching (SS) Pulse Width Modulated (PWM) AC-DC boost converter. In the proposed converter, the main switch is turned on with Zero Voltage Transition (ZVT) and turned off with Zero Current Transition (ZCT). The main diode is turned on with Zero Voltage Switching (ZVS) and turned off with Zero Current Switching (ZCS). The auxiliary switch is turned on and off with ZCS. All auxiliary semiconductor devices are turned on and off with SS. There is no extra current or voltage stress on the main semiconductor devices. The majority of switching energies are transferred to the output by auxiliary transformer. Thus, the current stress of auxiliary switch is significantly reduced. Besides, the proposed converter has simple structure and ease of control due to common ground. The theoretical analysis of the proposed converter is verified by a prototype with 100 kHz switching frequency and 500 W output power. Furthermore, the efficiency of the proposed converter is 98.9% at nominal output power.

• 대한전자공학회논문지TC
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• 제48권1호
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• pp.97-101
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• 2011

개인 휴대통신의 서비스 대역에 대응하는 4중 대역 p-HEMT SP6T 스위치를 구현하였다. 낮은 삽입손실과 높은 격리특성을 달성하기 위하여, 트랜지스터 단위소자의 최적화를 통해 On-Off간 상호 보완적 관계를 고려하였으며, 특히 송수선간 격리 특성의 경우, 큰 커패시터 삽입을 통하여 우수한 격리 특성을 달성하는 동시에 단일의 전압제어와 백비아를 사용한 접지를 통해 소형화를 달성하였다. 구현된 SP6T 스위치는 $950um{\times}100um$의 크기를 가지며 공정상 게이트 우물의 오류를 감안할 때, 각 주파수 대역에서 우수한 삽입손실 및 격리특성을 확인 할 수 있었다.

• Progress in Superconductivity
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• 제5권1호
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• pp.13-16
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• 2003

In this work, we have studied about an RSFQ (Rapid Single Flux Quantum) switch element. The circuit was designed, simulated, and laid out for mask fabrication. The switch cell was composed of a D flip-flop, a splitter, a confluence buffer, and a switch core. The switch core determined if the input data could pass to the output. “On” and o“off” controls in the switch core could be possible by utilizing an RS flip-flop. When a control pulse was input to the “on” port, the RS flip-flop was in the set state and passed the input pulses to the output port. When a pulse was input to the “off” port, the RS flip-flop was in the reset state and prevented the input pulses from transferring to the output port. We simulated and optimized the switch element circuit by using Xic, WRspice, and Julia. The minimum circuit margins in simulations were more than $\pm$20%. We also performed the mask layout of the circuit by using Xic and Lmeter.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

• Journal of Advanced Marine Engineering and Technology
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• 제22권5호
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• pp.617-625
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• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. These equivalent circuits are analyzed so that the overshoot voltage across the main switch, the snubber current, and the turn-off transition time can be predicted analytically. From these results, the normalized overshoot voltage is reduced to 1 as $_W2T_on$ varies from zero to $\pi$/2, and then it is fIxed at 1 for $_W2T_on$> $\pi$/2. The peak snubber inductor current is directly proportional to the input current. The turn-offtransition time wltoffvaries from 0 to 2.57, depending on $_W2T_on$. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.327-331
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• 2003

This paper proposes a novel ZVZCS-PWM Boost Converter. It enables the main switch to be turned on and off with both zero voltage and zero current and the auxiliary switch to be turned on and off with ZCS, the rectify diode to be turned on and off with ZVS. Moreover, this converter is suitable for not on]y minority carrier device but also majority carrier device. The auxiliary resonant circuit of the proposed boost converter is placed out the main power path, therefore, there are no voltage/current stresses on the main switch and diode. The operation of the proposed boost converter is explained and analyzed theoretical and experimentally, from a prototype operating at 100kHz, with an input voltage rated at 50V.

• Journal of Power Electronics
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• 제19권1호
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• pp.11-23
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• 2019

In this study, a novel zero voltage zero current transition (ZVZCT) bidirectional DC-DC converter is proposed by employing coupled inductors. This converter can turn the main switch on at ZVZCT and it can turn it off with zero voltage switching (ZVS) for both the boost and buck modes. These characteristics are obtained by using a simple auxiliary sub-circuit regardless of the power flow direction. In the boost mode, the auxiliary switch achieves zero current switching (ZCS) turn-on and ZVS turn off. Due to the coupling inductors, this converter can make further efficiency improvements because the resonant energy in the capacitor or inductor can be transferred to the load. The main diode operates with ZVT turn-on and ZCS turn-off in the boost mode. For the buck mode, there is a releasing circuit to conduct the currents generated by the magnetic flux leakage to the output. The auxiliary switch turns on with ZCS and it turns off with ZVT. The main diode also turns on with ZVT and turns off with ZCS. The design method and operation principles of the converter are discussed. A 500 W experimental prototype has been built and verified by experimental results.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.275-285
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• 2014

Dipyrene-based fluorescent chemosensor(분자 1)가 개발되었다. 분자 1은 여러 금속이온 중 $Cu^{2+}$와 $Hg^{2+}$의 fluorescent chemosensor로서 센싱할 수 있고, excimer-switch off mechanism에 따라 $Cu^{2+}$와 $Hg^{2+}$ 금속이온을 감지한다. Ground state와 excited state에 대한 DFT와 TD-DFT 방법을 통해 분자 1의 $Hg^{2+}$에 대한 형광 turn on/off을 확인하고, 구조변화에 따른 molecular orbital을 계산하였다. 계산결과 분자 1은 excited state에서 excimer를 형성할 수 있으나 $1+Hg^{2+}$는 excimer를 형성하지 못함을 알 수 있었다. 여기서 우리는 분자 1과 $Hg^{2+}$ 금속이온 결합에 대하여 실험값과 비교 분석하여 그 메커니즘 조사하였다.

• 한국컴퓨터정보학회논문지
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• 제21권1호
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• pp.17-24
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• 2016

In this paper, we introduce indoor localization technologies categorizing them into ON/OFF switch and senor based, wireless communication based, and image based technologies. Then we describe several representative techniques for each of them, emphasizing their strengths and weaknesses. We define important performance issues for indoor localization technologies and analyze recent technologies according to the performance issues. Our analyses show that ON/OFF switch based technologies are difficult to install, but accurate and not limited by light. Wireless communication technologies are not limited by light nor distance (space) and do not need additional device. Image based technologies do not need additional device but are limited by light, and their accuracies are affected by light. We believe that this paper provide wise view and necessary information for recent indoor localization technologies.