• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.25-29
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• 2002

There is an increasing interest in high-speed signal processing in modern telecommunication and SC circuit, HDTV, ISDN. There are many methods of high-speed signal processing. This paper describes a design approach for the realization of high-frequency Op-amp in CMOS technology. A limiting factor in Op-amp based analog integrated circuits is the limited useful frequency range. this thesis will develop a CMOS op-amp architecture with improved gainband width product with this technique an op-amp will achieve up to 170MHz (CL=2pF) unity-gain frequency with a 1.2-micron design rule. This CMOS op-amp is particularly suitable for achieving wide and stable closed-loop band widths, such as required in high-frequency SC filters, high-speed analog circuits.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1159-1168
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• 1993

The Switched-Capacitor Integrator(SCI) is a basic building block of Switched-Scpacitor Filter(SCF). But owing to the errors from the finite gain and bandwidth of op-amp on SCI, the most of SCP are limited to their applications. Although many of the compensation methods developed for active RC filters can be directly adapted to SCF, this is not true for the analysis of the effects of the op-amp dynamics on the filter response. The effect of finite op-amp gain is similar to the active RC filters. But SCF is more toter-ant of the finite op-amp bandwidth. In this paper, we have considered the errors of the finite gain and bandwidth of op-amp on SCI , and presented the simple and effective methods of compensating the errors of SCI due to the finite op-amp gain using the buffer circuit.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.903-906
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• 2003

In this paper, we proposed high slew-rate and low-power OP-AMP of the data driver for TFT-LCDs. Proposed OP-AMP contains newly developed rail-to-rail class-AB input circuit which enables the low-quiescent current and high slew-rate OP-AMP. The slew-rate and the quiescent current of the proposed OP-AMP are 31.2V/$\mu$sec and 5$\mu$A, respectively.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1521-1524
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• 1987

The performance of SCF can be improved with the Op-AMP which has the properties of high speed, large slew rate, and lower power dissipation. The OP-AMP used for SCF will be presented. For illustration, using this OP-AMP 5-th order LPF is designed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.118-123
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• 1989

In this paper, as we have integrated SCF for voice signal processing using CMOS circuit with the low power dissipation and the easy circuit design, it has been presented the simplified CMOS OP AMP design method with ${\pm}$5V pwoer source in order to use together with digital part. After an example about SCF CMOS OP AMP design, it has been performed layout appling channel width and length obtained by design method, and then its characteristics were simulated by SPICE 2G program. Therefoe, this design method will be applied the general CMOS OP AMP design in the electronic circuit.

• Journal of the Korean Society of Radiology
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• v.11 no.3
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• pp.101-108
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• 2017

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The advanced DC/DC converter uses a PWM-IC with OP-Amp. (Operational Amplifier) to control a MOSFET (metal-oxide semiconductor field effect transistor), which is a switching component, efficiently. In this paper, it is shown that the electrical characteristics of OP-Amp. are affected by radiations of ${\gamma}$ rays using $^{60}Co$ for TID (Total Ionizing Dose) testing and 5 heavy ions for SEL (Single Event Latch-up) testing. TID testing on OP-Amp. is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the OP-Amp. operation is evaluated SEL testing after implementation of the controller board.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.61-66
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• 2007

A gain enhancement rail-to-rail buffer amplifier for liquid crystal display (LCD) source driver is proposed. An op-amp with extremely high gain is needed to decrease the offset voltage of the buffer amplifier. Cascoded floating current source and class-AB control block in the op-amp achieve a high voltage gain by reducing the channel length modulation effect in high voltage technologies. HSPICE simulation in $1\;{\mu}V$ 15 V CMOS process demonstrates that voltage gain is increased by 30 dB. The offset voltage is improved from 6.84 mV to $400\;{\mu}V$. Proposed op-amp is fabricated in an LCD source driver IC and overall system offset voltage is decreased by 2 mV.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.4
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• pp.461-466
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• 1999

A CMOS op amp with rail-to-rail input and output ranges is designed in a one-volt supply. The output stage of the op amp is used in a common source amplifier that operates in sub-threshold region to design a low voltage op amp with rail-to-tail output range. To drive heavy resistor and capacitor loads with rail-to-rail output ranges, a common source amplifier which has a low output resistance is utilized. A bulk-driven differential pair and a bulk-driven folded cascode amplifier are used in the designed op amp to increase input range and achieve 1 V operation. Post layout simulation results show that low frequency gain is about 58 ㏈ and gain bandwidth I MHz. The designed op amp has been fabricated in a 0.8${\mu}{\textrm}{m}$ standard CMOS process. The measured results show that this op amp provides rail-to-rail output range, 56㏈ dc gain with 1 MΩ load and has 0.4 MHz gain-bandwidth with 130 ㎊ and 1 kΩ loads.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.133-136
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• 2000

A new Op-Amp output buffer is presented for driving large-size LCD panels. The proposed Op-Amp is designed by combining a common source and a common drain amplifier to have a high slew rate and to minimize the quiescent current. The proposed circuits are simulated in a high-voltage 0.6${\mu}{\textrm}{m}$ CMOS process, dissipates only 20${\mu}{\textrm}{m}$ static current, and have 83dB open-loop DC gain and 60$^{\circ}$phase margin.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.7
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• pp.665-670
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• 2016

In this paper, we suggest the design of OP-AMP using MOSFET in the operation of sub-threshold condition as a basic unit of an IoT. The sub-threshold operation of MOSFET is useful for an ultra low power consumption of sensor network system in the IoT, because it cause the supply voltage to be reduced. From the simulation result using 0.35 um CMOS process, the supply voltage, VDD can be reduced with 0.6 V, open-loop gain of 43 dB and the power consumption was evaluated with about $1.3{\mu}W$ and the active size for an integration was measured with $64{\mu}m{\times}105{\mu}m$. It is expected that the proposed circuit is applied to the low power sensor network for IoT.