• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• 전기의세계
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• 제27권3호
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• pp.36-42
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• 1978

It has been investigates that electric characteristics of plasma electron beam in N$_{2}$, H$_{2}$ and Ar gas jars under various gas pressures during electron beams are formed. The results are as follows: 1)Electron beam is formed in the region of positive resistance on the characteristic curve. This phenomenon is identical in N$_{2}$, H$_{2}$ and Ar gases. 2)But in Ar gas, electron beam is formed at relatively lower gas pressure than in H$_{2}$ and N$_{2}$. 3)In pure gas either N$_{2}$, H$_{2}$ and N$_{2}$ the lower the gas pressure, the higher the voltage drop for the same electron beam current. 4)The region in which electron beam is formed is limited at a given pressure. 5)Beyond the limit mentioned above, it becomes glow discharge state and the current increases radically. 6)At a given gas pressure, electron beam voltage, that is, electrical power input increases with gap length.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.889-895
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• 2008

This paper presents a comprehensive mathematical analysis and simulation of trench IGBT with the help of PIN-PNP combinational model. Since trench IGBT is characteristically influenced by PIN diode, it may be almost impossible to analyze the trench IGBT using PNP-MOS modeling methods, even PIN-MOS techniques which neglect the hole current components coming into p-base region. A new PIN-PNP complementary cooperational model is developed in order to make up the drawbacks of existing models. It would allow us to make qualitative analysis as well as simulation about switching and on-state characteristics of 1,700 V trench IGBT. Moreover, if we improve the PIN diode effects through the optimization of trench structure, trench IGBT is expected to be one of the most promising devices in the not only high-voltage but also high speed switching device field.

• Journal of Power Electronics
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• 제16권1호
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1997년도 전력전자학술대회 논문집
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• pp.204-210
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• 1997

The paper deals with the design and evaluation of a new static-exciter for generator excitation systems to improve the steady-state and transient stabilities. It increases or maintains the generator field current by boosting the field voltage in the case of an input AC line voltage drop during and immediately after a fault. The validity of the proposed excitation system is verified with computer simulation. The simulation results of the stability analysis on the generator with the proposed exciter is better than that of a conventional static exciter and a conventional AC exciter. Also, this proposed exciter can be simply implemented and controlled by modern power electronics technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.5-5
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• 2010

Gallium Nitride(GaN)는 LED, Laser 등에 사용되는 광학적 특성뿐만 아니라 Wide Bandgap의 전기적 특성 또한 주목받고 있다. 본 논문은 600V급 GaN(Gallium Nitride) Power SIT(Static Induction Transistor)에 대해서 Design Parameter 변환에 따른 전기적 (Breakdown Voltgage, On-state Voltage Drop)특성과 열적 (Lattice Temperature Distribution)특성변화를 분석하여 소자가 갖는 구조적 손실을 최소화하였다. 또한, 기존 실리콘 기반 전력소자와 특성 비교를 통하여 GaN Power SIT의 우수성을 증명하였다. GaN Power SIT 소자 설계 및 최적화를 위해서 Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하였다. 실험 결과 수 ${\mu}m$의 소자 두께만으로도 실리콘 전력소자에 비해 더 뛰어난 열 특성과 더 적은 전력소모를 갖는 600V급 GaN Power SIT 소자를 구현할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.471-475
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• 1997

PWM-VSI based ac-drives have high nonlinearity due to dead-time in the inverter and the voltage drop across the switching devices. In this paper, we introduced a new nonlinear model of PWM-VSl including parastic capacitor and also showed validity of the model by circuit simulations and experiments. Furthermore, we proposed an on-line identification algorithm for the uncertain model parameters.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권8호
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• pp.500-508
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• 2004

This paper presents a new sensorless vector control system for high performance induction motor drives fed by a matrix converter with non-linearity compensation and disturbance observer. The nonlinear voltage distortion that is caused by commutation delay and on-state voltage drop in switching device is corrected by a new matrix converter modeling. The lumped disturbances such as parameter variation and load disturbance of the system are estimated by the radial basis function network (RBFN). An adaptive observer is also employed to bring better responses at the low speed operation. Experimental results are shown to illustrate the performance of the proposed system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.115-116
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• 2006

Since the discovery of the high-temperature superconductors, many researches have been performed for the practical applications of superconductivity technologies in various fields. As results, significant progress has been achieved. Especially, Superconducting Fault Current Limiter (SFCL) offers an attractive means to limit fault current in power systems. The SFCLS, in contrast to current limiting reactors or high impedance transformers, are capable of limiting short circuit currents without adding considerable voltage drop and energy loss to power systems during normal operation. Under fault conditions, a resistance is automatically inserted into the power grid to limit the peak short-circuit current by transition from the superconducting state to the normal state, the quench. The advantages, like fail safe operation and quick recovery, make SFCL very attractive, especially for rapidly growing power systems with higher short-circuit capacities. In order to verify the effectiveness of the SFCL, in this paper, the analysis of fault current and voltage stability assessment in a sample distribution system and a transmission system are performed by the PSCAD/EMTDC based simulation method. Through the simulation, the advantage of SFCL application is shown, and the effective parameters of the SFCL are also recommended for both distribution and transmission systems. A resistive type component of SFCL is adopted in the analysis. The simulation results demonstrate not only the effectiveness of the proposed simulation scheme but also SFCL parameter assessment technique.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.932-934
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• 1999

In this paper, the new IGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The simulations are used in order to investigate the effects of the position, width and concentration of trap injection region using 2D device simulator MEDICI. And, their electrical characteristics are analyze and the optimum design parameters are extracted. As a result of simulation, the turn off time for the proposed LIGBT model A by the trap injection is $0.78{\mu}s$. And, the latch up voltage is 3.4V and forward blocking voltage is 168V which are superior to that of conventional structure. In addition, the proposed model is achieved more efficient in switching time and process effort. Therefore, It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.