• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.999-1002
• /
• 2003

In this study, the white organic light emitting device was fabricated using ITO/a-NPD:DCM/a-NPD/BCP/Alq3/Al structure. Blue emission by a-NPD and orange emission by energy transfer between a-NPD and DCM embodied the white emission. The optimal structure of the white OLED is ITO/a-NPD:DCM(50$\square$)/a-NPD(150$\AA$)/BCP(100$\square$)/Alq$_3$(200$\square$)/Al. We varied the doping concentration of DCM properly and obtained high purity white emitting light. The CIE coordinate and maximum luminance of the devices was obtained (0.310, 0.333) and 400cd/$m^2$ at 11Volt.

• 진공이야기
• /
• 제1권2호
• /
• pp.24-29
• /
• 2014

Display is a key component in electronic devices. OLED is growing very fast recently due to the explosion of the smart phone market although still LCD is the dominating display technology in the display market at the moment. Also needs for the large area and high resolution TVs and flexible displays are increasing these days. Especially flexible display is expected to be one of the key technologies in mobile devices requiring small device size and large display size. Contrary to the conventional displays, flexible display requires organic materials for the substrate, the active driving element and also for the display element. Plastic film as a substrate, organic semiconductor as an active component of the transistor and organic light emitting materials or electronic paper as a display element are studied actively. In this article, mainly backplane technologies such as substrates and the transistor materials for flexible display will be introduced.

• 한국세라믹학회지
• /
• 제54권6호
• /
• pp.449-469
• /
• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• 한국전기전자재료학회논문지
• /
• 제17권2호
• /
• pp.228-235
• /
• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.1046-1049
• /
• 2004

The improvement in OLEDS performance is correlated with the surface chemical composition, hole injection and electron injection. In this study, a new hole injection material, HIL202(NPB derivatives), was synthesized and the devices with the structure of ITO/HIL202/NPB/$Alq_3$/Liq/Al were fabricated. The devices with a new hole injection material showed the improved current density, luminance and life time then the NPB or conventional hole injection material based OLEDs, due to the improved adhesion morphology between ITO surface and hole injection material.

• 한국전기전자재료학회논문지
• /
• 제32권2호
• /
• pp.141-146
• /
• 2019

Non-emissive LCDs need a backlight, and have difficulty implementing wide viewing angles due to differences in phase retardation depending on the behavior of the liquid crystals. Although wide viewing angles are good characteristics for devices such as TVs, they are not good for mobile devices. In this paper, we propose ways to design diffusers with ELC lenses to achieve wide and narrow viewing angles depending on the circumstances. A study was conducted on optimizing the design of a liquid lens diffuser with the same light as that for an OLED, by extracting design factors that affect the performance of the diffuser and applying the Taguchi method to them.

• 한국정밀공학회지
• /
• 제30권6호
• /
• pp.589-595
• /
• 2013

Solution processed conjugated molecules enable to manufacture various electronic devices by unconventional and cost effective patterning methods as screen or gravure printing. Spin-coating is the most popularly used method to form conjugated polymeric film for various electronic devices. The coating method has certain disadvantages such as a large amount of unwanted wastes, difficulty forming a film with a large area, and impossible to apply roll-to-roll manufacturing. We present here a promising alternative coating method, bar-coating for conjugated polymer film and OLED with the bar coated light emitting layer. In this papers, we show atomic force microscope images of spin- and bar-coated Poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT) films on substrate. The bar-coated film showed a slight lower RMS roughness (1.058 [nm]) than spin-coated film (1.767 [nm]). It means the bar-coating is suitable method to form light emitting layers in OLEDs. By using bar-coating process, an OLED obtained with 4.7 [cd/A] in maximum current efficiency.

• 공업화학
• /
• 제18권5호
• /
• pp.506-510
• /
• 2007

전기적 특성을 가지는 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA)가 유기발광소자(OLED)에서 전극으로 사용되는 ITO (Indium Tin Oxide)와 홀 수송층(Hole Transport Layer, HTL) 사이에 박막으로 진공증착되었다. 분자배열이 잘 되어진 1-TNATA의 경우 ITO와 홀 수송층 사이의 계면에서 생기는 전하주입장벽을 줄임으로 소자의 안정성과 효율을 높여준다. 본 연구에서의 라만 스펙트라(Raman spectra) 분석 결과, 증착된 1-TNATA 박막의 열처리와 증착하는 동안 전자기장 처리에 의해서 박막이 집적되고 분자배열이 이루어짐을 확인하였다. 열처리를 한 경우 1-TNATA 박막으로의 전류 흐름이 25% 증가하였다. 또한, $110^{\circ}C$에서 열처리한 1-TNATA 박막으로 제조된 다층유기발광소자의 전원 효율과 발광효율이 향상되었다. 열처리한 박막이 전자기장으로 처리한 박막에 비해 높은 효율을 나타내었다.

• 한국전기전자재료학회논문지
• /
• 제33권4호
• /
• pp.281-285
• /
• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• 청정기술
• /
• 제18권4호
• /
• pp.366-372
• /
• 2012

펜던트기가 tris(8-hydroxyquinoline) aluminum ($AlQ_3$)으로 된 아크릴 단량체(HEMA-p-$AlQ_3$) (HEMA = 2-hydroxyethyl methacrylate)를 각각 메틸메타크릴레이트(MMA), 아크릴로니트릴(AN), 순수 HEMA와 공중합하여 3가지 아크릴 공중합체[MMA-co-HEMA-p-$AlQ_3$ (공중합체 1), AN-co-HEMA-p-$AlQ_3$ (공중합체 2), HEMA-co-HEMA-p-$AlQ_3$ (공중합체 3)]를 라디칼 공중합법으로 합성하였다. 25 wt%의 HEMA-p-$AlQ_3$를 함유한 공중합체 1,2,3의 유리전이온도($T_g$)는 각각 158, 150, $126^{\circ}C$로 나타났으며, 이는 유기발광다이오드(organic light emitting diodes, OLED)로써 지녀야 하는 우수한 열 안정성을 만족하였다. 그리고 이들 공중합체는 테트라하이드로퓨린, 디메틸포름아미드, 톨루엔 및 클로로포름 등과 같은 용매에 잘 용해되었으며, 자외선-가시광선의 흡수 및 발광 거동이 순수 $AlQ_3$와 거의 동일함을 알 수 있었다. 또한 이들 공중합체를 스핀 코팅하여 녹색의 OLED 디바이스를 제조한 후 전류 밀도-전압 곡선을 비교하였다. 공중합체 3을 사용한 OLED 디바이스의 on-set 전압은 약 2 볼트로써 다른 두 공중합체 OLED 디바이스의 전압(공중합체 1: 약 3 볼트, 공중합체 2: 약 4 볼트) 보다 낮음을 알 수 있었다.