• Title/Summary/Keyword: OLED Display Backplane

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LAYOUT VERIFICATION METHOD FOR DESIGNING AND MANUFACTURING OF LCOS/AM OLED MICRODISPLAY BACKPLANES

  • Smirnov, A.G.;Koukharenko, S.N.;Volk, S.V.;Zayats, A.M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.112-116
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    • 2006
  • In this presentation we will describe two core elements, which combination gives a new approach to layout verification; they are a computational algorithm for modeling of photolithographical processes and a method for physical layout verification that uses output contours of that algorithm. Utilization of this approach allows to improve the quality of LCOS/AM OLED backplanes physical verification, because it considers discrepancies between mask features and printed contours on a wafer.

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Advances in White OLED Tandem Architecture for Next Generation AMOLED Displays

  • Hatwar, T.K.;Spindler, J.P.;Vargas, J.R.;Helber, M.;Klubek, K.;Begley, W.;Itoh, M.;Hamer, J.;VanSlyke, S.A.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.231-234
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    • 2007
  • Advances in white OLED tandem architecture are discussed.With these structures, stable and low-power full color AMOLED displays can be fabricated that are anticipated to be suitable for large area applications such as TVs. With a tandem architecture, efficient (24 cd/A) OLED structures with exceptional stability (${\sim}100,000\;h$ at $1000\;cd/m^2$) are described. In addition, excellent color gamut (>100% NTSC) can be attained by incorporating advanced color filters into the AMOLED backplane in a typical bottom-emitting configuration.

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Development of 40 inch Full Color AMOLED Display

  • Chung, K.;Huh, J.M.;Sung, U.C.;Chai, C.C.;Lee, J.H.;Kim, H.;Lee, S.P.;Goh, J.C.;Park, S.K.;Ko, C.S.;Koh, B.S.;Shin, K.J.;Choi, J.H.;Jung, J.H.;Kim, N.D.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.781-784
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    • 2005
  • We have developed technology to fabricate large-size active matrix organic light-emitting diode (AMOLED) displays with good color purity. Using these innovations, we have developed a 40inch diagonal WXGA AMOLED full color display. Because the TFT circuitry occupies a large portion of the pixel structure, an efficient white emission OLED is essential to integrate the device onto the active matrix backplane. The development of these technologies enables OLED displays to fulfill the requirements for larger size applications such as HDTVs

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Stainless Steel Foil Substrates; Robust, Low-Cost, Flexible Active-Matrix Backplane Technology

  • Hong, Yong-Taek;Heiler, Gregory;Cheng, I-Chun;Kattamis, Alex;Wagner, Sigurd
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.892-896
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    • 2005
  • In this paper, key issues of stainless steel foil substrates for display applications have been described. We studied and analyzed technical issues on substrate passivation/planarization to control surface roughness and capacitive coupling from conductive substrates. A thick (either multiple or single) passivation/planarization layer needs to be applied on the nonelectronic-grade stainless steel substrate to provide a smooth surface and electrical insulation from the conductive substrate. Especially for large size, high-resolution display applications, low k and thick passivation/planarization layers should be used for appropriate capacitive coupling. Based on our initial study, a unit area capacitance of less than $2nF/cm^2$ of passivation/planarization layers is needed for 32" HD TV OLED displays.

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Electrical Properties of Local Bottom-Gated MoS2 Thin-Film Transistor

  • Kwon, Junyeon;Lee, Youngbok;Song, Wongeun;Kim, Sunkook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.375-375
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    • 2014
  • Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

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