• Title/Summary/Keyword: OLED Degradation

Search Result 46, Processing Time 0.027 seconds

A Driving Method for Large-Size AMOLED Displays Using a-Si:H TFTs

  • Min, Ung-Gyu;In, Hai-Jung;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.517-520
    • /
    • 2008
  • A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.

  • PDF

Effect of Ambient Gas on the Early Stage of the OLED Degradation

  • Kwak, Jeong-Hun;Cho, Hyun-Duck;Hong, Yong-Taek;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08b
    • /
    • pp.1467-1469
    • /
    • 2007
  • We report on the effect of ambient gas on the OLED degradation. The operating voltage and quantum efficiency increases when the device is exposed to the atmospheric gas and then returns to the initial level of the device in vacuum when the atmospheric gas is evacuated. These changes in the OLED performance can be attributed to the ambient gas pressure.

  • PDF

Realization of Static Image on OLEO using Photoluminescence Degradation (PL Degradation을 활용한 OLED 소자의 사진 이미지 구현)

  • Suh, Won-Gyu;Moon, Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.9
    • /
    • pp.859-862
    • /
    • 2008
  • We have realized static image on organic light emitting diodes (OLEDs) using photoluminescence degradation. Ultraviolet (UV) was irradiated to the glass side of device. UV power was 350 Wand the wavelength was 365 nm. The UV irradiation gives rise to the degradation of photoluminescence. Due to the degradation, the current density-voltage curve was shifted to the higher voltage side and the luminescence was also degraded by the current and photoluminescence drop. The negative imaged films were prepared to control the transmittance of UV. The UV light was passed through the film. By this method, the film image was transferred to the device with reversed image and the static image was realized on the OLED.

A new method for monitoring an OLED panel for lighting by sensing the wave-guided light

  • Han, Jun-Han;Moon, Jaehyun;Shin, Jin-Wook;Joo, Chul Woong;Cho, Doo-Hee;Hwang, Joohyun;Huh, Jin Woo;Chu, Hye Yong;Lee, Jeong-Ik
    • Journal of Information Display
    • /
    • v.13 no.3
    • /
    • pp.119-123
    • /
    • 2012
  • In this work, we report on a new monitoring method for an organic light-emitting diode (OLED) panel for lighting by optical sensing of the wave-guided light in the substrate. Using microlens array films, the wave-guided light was extracted into the edge or back side of the panel to be monitored by a photodiode. The luminance of the extracted light was measured as linearly proportional to the front light. Thus, by converting the extracted light into photo voltage, monitoring the luminance change occurring in the OLED is possible. Based on the results and concepts, we have proposed a photodiode-equipped driving circuit which can generate compensated driving current for uniform luminance of OLED panels.

Highly Robust Bendable a-IGZO TFTs on Polyimide Substrate with New Structure

  • Kim, Tae-Woong;Stryakhilev, Denis;Jin, Dong-Un;Lee, Jae-Seob;An, Sung-Guk;Kim, Hyung-Sik;Kim, Young-Gu;Pyo, Young-Shin;Seo, Sang-Joon;Kang, Kin-Yeng;Chung, Ho-Kyoon;Berkeley, Brain;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.998-1001
    • /
    • 2009
  • A new flexible TFT backplane structure with improved mechanical reliability is proposed. Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors based on this structure have been fabricated on a polyimide substrate, and the resultant mechanical durability has been evaluated in a cyclic bending test. The panel can withstand 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After 10K bending cycles, the change of threshold voltage, mobility, sub-threshold slope, and gate leakage current were only -0.22V, -0.13$cm^2$/V-s, -0.05V/decade, and $-3.05{\times}10^{-13}A$, respectively.

  • PDF

Impedance Characteristics of Fluorescent OLED with Device Structure (소자 구조에 따른 형광 OLED의 Impedance 특성)

  • Kong, Do-Hoon;Ju, Sung-Hoo
    • Korean Journal of Materials Research
    • /
    • v.28 no.1
    • /
    • pp.18-23
    • /
    • 2018
  • To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / $Alq_3$ / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / $Alq_3$ / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / $Alq_3$ / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and $160{\Omega}$ just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

Frequency Dependency of Multi-layer OLED Current Density-voltage Shift and Its Application to Digitally-driven AMOLED

  • Kim, Hyunjong;Kim, Suhwan;Hong, Yongtaek
    • Journal of the Optical Society of Korea
    • /
    • v.16 no.2
    • /
    • pp.181-184
    • /
    • 2012
  • We report, for the first time, operation frequency dependence of current density-voltage ($J_{OLED}-V_{OLED}$) shift for multi-layer organic light-emitting diodes (OLEDs). When the OLEDs were electrically stressed for 21 hours with 50% duty voltage pulses at 60, 120, 240, and 360 Hz, the JOLED-VOLED shifts were suppressed by half for 360 Hz operation compared with 60 Hz operation, but with little change in emission efficiencies. This frequency dependent $J_{OLED}-V_{OLED}$ shift is believed to be commonly observed for typical multi-layer OLEDs and can be used to further improve lifetime of digitally-driven active-matrix OLED displays.

A study on plasma-assisted patterning and doubly deposited cathode for improvement of AMOLED common electrode IR drop

  • Yang, Ji-Hoon;Kwak, Jeong-Hun;Lee, Chang-Hee;Hong, Yong-Taek
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.481-484
    • /
    • 2008
  • In order to reduce IR drop through common electrode in AMOLED, we propose a novel method to form electrical contact between highly-conductive bus lines and common electrode by using a plasma-assisted patterning of OLED layers and double deposition of the common electrode. Plasma-assisted patterning effects on OLED performance and degradation have been investigated. This patterning method caused turn-on voltage decrease, current flow increase at the same applied OLED voltages, quantum efficiency decrease, and rapid degradation at early stage during the lifetime test. However, comparable 70% luminance lifetime were obtained for both patterned and non-patterned OLEDs.

  • PDF

Electroluminescent Characteristics of Fluorescent OLED with Alternating Current Negative Voltage (교류 음 전압에 따른 형광 OLED의 전계 발광 특성)

  • Seo, Jung-Hyun;Yang, Jae-Woong;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean institute of surface engineering
    • /
    • v.52 no.2
    • /
    • pp.72-77
    • /
    • 2019
  • To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

Change of Internal Resistance of OLED Devices during Operation

  • Lee, Soon-Seok;Hwang, Hak-Eun;Lim, Sung-Kyoo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08b
    • /
    • pp.1443-1446
    • /
    • 2007
  • The luminance and operating voltage were measured during OLED operation for the purpose of analyzing the efficiency and change of internal resistance. The half lifetime of OLED was affected by degradation of OLED due to heat generated by ambient temperature and self heating. The operating voltage constantly increased due to the increase of internal resistance. The half lifetime of OLED driven by constant current source was found to be longer than that of the OELD driven by constant voltage and the reasons were clearly explained in this paper.

  • PDF