• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.428-429
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• 2006

In this thesis, verifies electrical-optical characteristics of phosphorescent materials. basic structure of fabricating devices is glass/ITO/$\alpha$-NPD($300{\AA}$)/CBP:Guest($300{\AA}$)/BCP($80{\AA}$)/$Alq_3(100{\AA})$/Al($1000{\AA}$). In efficiency, fabrication of organic light emitting diodes using $Ir(btp)_2acac$ phosphorescent material is external quantum efficiency 0.268% as doping concentration 3%. At CIE coordinates, phosphorescent material $Ir(btp)_2acac$ following materials moves high purity red color(x=0.6686, y=0.3243). The brightness shows $285cd/cm^2$.

• 한국전자통신학회논문지
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• 제5권1호
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• pp.81-87
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• 2010

본 논문에서는 유기발광다이오드 적용을 위한 보호막 혹은 barrier 적용을 위하여 화학증착방법(CVD)를 이용한 실리콘 산화막을 형성하고, 산화막의 특성에 영향을 미치는 공정조건을 변화시켰다. 이로부터 HDP-CVD를 활용한 $SiO_2$박막 증착을 위한 최적의 공정조건은 $SiH_4:O_2$=30:60[sccm]유량, 소스와 기판과의 거리가 70 [mm], 기판에 Bias를 가하지 않은 조건인 경우 8~10[mtorr] 공정압력에서 매우 안정된 플라즈마 형성이 가능한 최적의 공정조건을 얻었다. 얻어진 공정조건으로 제작된 $SiO_2$산화막의 모콘테스트를 통한 투습율(WVTR)을 조사한 결과 2.2 [$g/m^2$_day]값으로 HDP-CVD로 제작된 $SiO_2$산화막은 유기발광다이오드용 보호막으로의 적용이 어려울 것으로 생각된다.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2955-2960
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• 2010

Spiro-type orange phosphorescent host materials, 9-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-1P) and 5-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-2P) were successfully prepared by a lithiation reaction followed by a phosphination reaction with diphenylphosphinic chloride. The EL characteristics of OPH-1P and OPH-2P as orange host materials doped with iridium(III) bis(2-phenylquinoline)acetylacetonate ($Ir(pq)_2acac$) were evaluated. The electroluminescence spectra of the ITO (150 nm)/DNTPD (60 nm)/NPB (30 nm)/OPH-1P or OPH-2P: $Ir(pq)_2acac$ (30 nm)/BCP (5 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) devices show a narrow emission band with a full width at half maximum of 75 nm and $\lambda_{max}$ = 596 nm. The device obtained from OPH-1P doped with 3% $Ir(pq)_2acac$ showed an orange color purity of (0.580, 0.385) and an efficiency of (14 cd/A at 7.0 V). The ability of the OPH-P series to combine a high triple energy with a low operating voltage is attributed to the inductive effect of the P=O moieties and subsequent energy lowering of the LUMO, resulting in the enhancement of both the electron injection and transport in the device. The overall result is a device with an EQE > 8% at high brightness, but operating voltage of less than 6.4 V, as compared to the literature voltages of ~10 V.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.182.1-182.1
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• 2013

Silver (Ag)는 높은 반사율을 가지고 있어 Top-Emission Organic Light Emitting Diode (T-OLED)의 반사전극으로 사용하기 적합하지만 일함수가 낮은 단점 (4.3 eV)을 가지고 있다. 이런 낮은 일함수를 증가시키기 위하여 Ag 박막 표면을 산화시켜 일함수를 증가시키기 위한 연구가 진행중에 있으며, 이 연구에서는 UV로 $O_3$을 발생시켜 Ag 박막 표면을 산화시키기 위한 연구를 진행하였다. 특히, Ag 박막 표면의 일함수 변화를 측정하기 위하여 SPM (Scanning Probe Microscopy)의 KPFM (Kelvin Probe Force Microscopy) mode를 적용하여 nano 영역에서의 일함수 변화를 surface potential로 측정하여 UV 표면 산화에 의한 표면 일함수 형상을 확인하였다. Ag 박막은 rf magnetron sputter를 사용하여, Si 기판위에 300nm 두께로 증착시켰다. 이후 $O_3$ 발생되는 UV 램프로 Ag 박막 표면 30초 간격으로 최대 5분간 산화시켰으며, 이후 KPFM mode를 사용하여 산화 시간에 따른 Ag 박막 표면의 potential 변화를 측정하였다. 0~3분간 산화된 Ag 박막 표면의 potential은 약 6 mV로 일정하였으나 3분 이후 최대 110 mV까지 급격하게 변화하는 것을 확인할 수 있었다. Ag 박막 표면의 RMS roughness는 UV 산화처리 전0.7 nm였으나, potential이 급격하게 증가하는 시점인 3분 이후 2.83 nm로 약 400% 이상 증가하였다. 이를 통해 $O_3$ 발생 UV 램프로 산화된 Ag 박막의 표면 물성은 처리 시간에 따라 급격히 변하는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.56-57
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• 2006

In this paper, the inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON SiO2 and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from a level of $0.57\;g/m^2/day$ (bare subtrate) to 1*10-5 g/$m^2$/day after application of a SiON and SiO2 layer. These results indicates that the PET/SiO2/SiON/Parylene barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• 한국ITS학회 논문지
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• 제6권2호
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• pp.138-145
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• 2007

발광형 교통안전표지는 안개가 잦은 곳, 야간 교통사고가 많이 발생하거나 발생가능성이 높은 곳, 도로의 구조로 인하여 가시거리가 충분히 확보되지 않은 곳 등과 같은 장소에서 제한적으로 사용하도록 규정 되었다. 현재 발광형 교통안전표지는 LED가 사용되고 있으나, 향후 새로운 교통안전표지용으로 유기발광다이오드를 제안하였다. 소자의 구조는 $ITO/2-TNATA(500{\AA})/{\alpha}-NPD(200{\AA})/DPVBi(300{\AA})/BCP(10{\AA})/Alq3(200{\AA})/LiF(10{\AA})/Al:Li(1000{\AA})$로 하였다. 인가전압 10 V에서 전류밀도는 $240.71mA/cm^2$, 휘도는 $10,550cd/m^2$, 발광효율은 3.53cd/A이었다. $N_2$ 가스가 주입된 플라즈마로 전처리한 ITO 표면을 갖는 소자가 플라즈마 전처리되지 않은 ITO 표면을 갖는 소자보다 특성이 향상되었다. EL 스펙트럼의 최대 발광 파장은 456nm이었고 색좌표값은 x=0.1449, y=0.1633으로 NTSC 색좌표 Deep blue 영역(x=014, y=0.08)에 근접한 순수한 청색에 가까운 값을 얻었다.

• 공업화학
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• 제18권6호
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• pp.587-591
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• 2007

본 연구는 유기발광디바이스용 적색형광물질인 6-(10-알킬페노티아진-3-비닐렌)-2-메틸-4-디시아노메틸렌-4H-피란 합성에 관한 것으로서 유도체들은 Knoevenagel 축합반응에 의하여 합성되었다. 이들은 전자공여성의 6-(10-알킬페노티아진-3-비닐렌)기와 전자흡인성의 2-메틸-4-디시아노메틸렌-4H-피란의 공액구조를 가지고 있다. 합성한 물질은 각각 FT-IR, $^1H-NMR$ 등을 통하여 그의 구조적 특성을 확인하였고, 융점, 수득율을 통하여 열적 안정성, 반응성 등을 확인하였으며, UV-visible과 PL분석으로부터 이 형광재료들의 광학적 특성을 확인하였다.

• 한국응용과학기술학회지
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• 제19권2호
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• pp.103-107
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• 2002

Diphosphine dinuclear gold(I) complexes were synthesized from the reaction of bridged diphosphines and gold ions. As a bridged diphosphine, 1,2-bis(diphenylphosphino)metbane (dppm) or 1,1'-Bis(diphenylphosphino) ferrocene (dppf) was introduced. As anionic ligands, CI was first coordinated to Au, resulting in (diphosphine)$(AuCl)_{2}$. Then, the ligand, SPh, was substituted for Cl in the chloride complex to give (diphosphine)$(AuSPh)_{2}$. As a result, three digold complexes, (dppm)$(AuCl)_{2}$. (I), (dppf)$(AuCl)_{2}$. (II), and (dppf)$(AuSPh_{2}$. (III) were prepared in this study. The thermal properties were investigated at first hand to confirm that the gold complexes were in fact formed. The digold complexes were decomposed above $200^{\circ}C$ while the ligand, dppm or dppf, melts under $180^{\circ}C$ The photoluminescence (PL) spectra of the spin-coated thin films showed the maximum peak at 590, 595, and 540nm for the complex, I, II, and III, respectively. These complexes were found to give the orange color phosphorescence. Therefore, these digold complexes can be candidates for orange-red phosphorescent materials in organic electroluminescent devices (OELD). Further studies on application of the complexes as a dopant in an emitting layer are in progress in our laboratory.