• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• Journal of Applied Biological Chemistry
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• 제50권4호
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• pp.254-258
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• 2007

Five flavonoids, isorhamnetin 3-O-${\beta}$-D-galactosyl-4'-O-${\beta}$-D-glucoside (1), isorhamnetin 3,4'-di-O-${\beta}$-D-glucoside (2), isorhamnetin 3-O-${\beta}$-D-(6-O-${\alpha}$-L-rhamnosyl)glucosyl-4'-O-${\beta}$-D-glucoside (3), isorhamnetin 3-O-${\beta}$-D-(6-O-${\alpha}$-L-rhamnosyl)glucoside (4), and isorhamnetin 3-O-${\beta}$-D-(6-O-${\alpha}$-L-rhamnosyl) galactoside (5) were isolated from the stems of Opuntia humifusa (Raf.) Raf. and their structures were identified based on LC-MS and NMR data.

• 한국세라믹학회지
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• 제40권4호
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• pp.346-349
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• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

• 폴리머
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• 제38권1호
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• pp.103-107
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• 2014

이축압출공정을 이용하여 poly(acrylonitrile-butadiene-styrene)(ABS)에 titanium dioxide($TiO_2$), barium sulfate($BaSO_4$), calcium carbonate($CaCO_3$)를 함량별로 첨가하여 복합체 쉬트를 제조하였고 복합체 쉬트의 반사율과 굴곡 탄성률을 측정하였다. ABS에 첨가된 충전제의 분산성이 우수한 것을 형태학을 통해 알 수 있었다. $TiO_2$와 $BaSO_4$의 함량에 따라 복합체 쉬트의 반사율이 증가하였고, 특히 $TiO_2$ 20 wt%에 $BaSO_4$를 5~20 wt%를 첨가한 복합체 쉬트의 경우 반사율이 95%이상이 얻어졌다. 굴곡 탄성률 또한 $TiO_2$와 $BaSO_4$의 함량에 따라 증가하여 $ABS/TiO_2/BaSO_4$ 조성비 85/10/5(w/w/w)의 1864 MPa에서 $ABS/TiO_2/BaSO_4$ 조성비 55/20/25(w/w/w)의 3134 MPa로 증가하였다.

• 대한금속재료학회지
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• 제49권8호
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• pp.614-618
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• 2011

Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high energy ball milling. The rapid sintering of nanostructured $MgAl_2O_4-Mg_2SiO_4$ composites was investigated by a high-frequency induction heating sintering process. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties. As nanomaterials possess high strength, high hardness, excellent ductility and toughness, undoubtedly, more attention has been paid for the application of nanomaterials. Highly dense nanostructured $MgAl_2O_4-Mg_2SiO_4$ composites were produced with simultaneous application of 80MPa pressure and induced output current of total power capacity (15 kW) within 2min. The sintering behavior, gain size and mechanical properties of $MgAl_2O_4-Mg_2SiO_4$ composites were investigated.

• 한국결정학회지
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• 제8권2호
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• pp.149-153
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• 1997

본 연구는 ZnO-Bi2O3-Co3O4-MnCo3-Cr2O3-Sb2O3를 기본 조성으로 하여 Sb2O3 첨가량(0-0.09mol%) 변화에 따른 grain size와 미세구조 특성을 고찰하고자 하였다. Sb2O3가 첨가되지 않은 조성은 이상 입자 성장에 의해 거대한 ZnO grain이 생성되었으며, Sb2O3를 첨가한 조성은 Zn7Sb2O12 spinel상 생성으로 입자 성장이 억제되어 이상입자 성장이 관찰되지 않았다. Sb2O3 첨가량 증가에 따라 ZnO grain size가 현격하게 감소하였으며 그 미세구조는 조밀하고 균일한 크기의 grain분포를 나타내었다.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.664-670
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• 2002

The electrical characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3$(ZPCCY)-based varistors were investigated with $Y_2O_3$ content in the range of 0.0~4.0 mol%. As $Y_2O_3$ content is increased, the average grain size was markedly decreased in the range of 18.6~3.2 $\mu m$ and the density of the ceramic was decreased in the range of 5.53 ~3.74 $g/\textrm{cm}^3$. While, the varistor voltage was increased in the range of 39.4~748.1 V/mm and the nonlinear exponent was in the range of 4.5~51.2 with increasing $Y_2O_3$ content. The addition of $Y_2O_3$ greatly enhanced the nonlinear properties of varistors, compared with the varistor without $Y_2O_3$. In particular, the varistors with $Y_2O_3$content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 51.2 and the leakage current is 1.3 $\mu A$. The donor concentration and the density of interface states were decreased in the range of (4.19~0.14) $\times$10$^{18}$ /㎤ and (5.38~1.15)${\times}10^{18}/\textrm{cm}^3$, respectively, with increasing $Y_2O_3$ content.

• 대한전기학회논문지
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• 제44권8호
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• Korean Chemical Engineering Research
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• 제44권6호
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• pp.609-613
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• 2006

분무열분해법에 의해 장파장 UV 여기원 하에서 높은 발광세기를 가지는 $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ 형광체를 제조하였다. 분무열분해공정 의해 제조된 $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ 형광체의 발광특성, 분말 형태 및 결정성에 대해 조사하였다. 분무열분해 공정에 의해 제조된 $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ 형광체는 모체를 구성하는 바륨과 스트론튬의 비에 따라 청녹색에서 황색에 이르기까지 다양한 파장대의 색을 구현할 수 있었다. x = 0인 $Ba_2SiO_4:Eu^{2+}$ 형광체의 경우 발광 중심파장이 500 nm였으며, x = 2인 $Sr_2SiO_4:Eu^{2+}$ 형광체의 경우 발광중심 파장이 554 nm였다. 분무열분해 공정에 의해 제조된 $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ 형광체는 구형의 형상을 띄지만 중공성의 입자 특성을 가졌다. 반면에 후열처리 과정을 거친 $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ 형광체는 큰 입자 크기와 불규칙한 형태를 가졌다. $Ba_{1.488}Sr_{0.5}SiO_4:Eu_{0.012}{^{2+}}$ 형광체가 환원분위기 하에서 후열처리 온도 $1,200^{\circ}C$에서 3시간 동안 후열처리 과정을 거쳤을 때 최적의 발광 세기를 가졌다.