• 제목/요약/키워드: O26

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A Study on the Dispute Settlement Procedure for the Preferential Rules of Origin

  • Yi, Ji-Soo
    • 한국중재학회지:중재연구
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    • 제26권3호
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    • pp.3-26
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    • 2016
  • The preferential Rules of Origin (RoO) govern tariff preferences that are given in accordance with the FTA. However, relatively few studies have been devoted to the procedures in settling disputes that are relevant to RoO under the FTA. This study is a first attempt at analyzing the applicability and the potential improvement in dispute settlement procedures in FTAs targeted at the preferential RoO. By exploring three dispute cases involving the preferential RoO, it is suggested that restrictiveness, complexity, and uncertainty that are inherent in the preferential RoO may trigger political tension and dispute. Forming a panel that is capable of mitigating political tension, facilitating participation and early cooperation of experts and stakeholders, and establishing a well-structured enforcement procedure are essential in dispute settlement procedures to resolve disputes involving cases on RoO. Furthermore, the current dispute settlement procedure that hinders the private sector's access should be changed to one that is more open to private sector entities, such as companies, to facilitate the enforcement of the decision. Given that more improved FTA dispute settlement procedure may guarantee the enforcement and application of the FTA preferential treatment in relation with more politically powerful states and foster genuine free trades, more in-depth studies must be conducted on this topic.

BTMSM/O2 유량변화에 따른 SiOCH 박막의 저유전 특성 (Properties of SiOCH Thin Film Lour Dielectric by BTMSM/O2 Flow Rates)

  • 박인철;김홍배
    • 한국전기전자재료학회논문지
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    • 제22권2호
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    • pp.132-136
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    • 2009
  • SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

Connectivity and Electrical Conductivity of YSZ-NiO Composite

  • Park, Young-Min;Park, Gyeong-Man
    • The Korean Journal of Ceramics
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    • 제4권2호
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    • pp.141-145
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    • 1998
  • The electrical properties of the mixed conducting yttria(8 mol%) stabilized zirconia(YSZ)-nickel oxide(NiO) composites were examined by a.c. impedance, 4-probe d.c. conductivity between 400 and $1000^{\circ}C$. The oxygen partial pressure dependence of conductivity, and electromotive force measurement of galvanic cell enabled to determine the electronic contribution to the conduction. Up to 6 vol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in ionic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effect of composition on the electrical property was explained by the microstructure and thus by the distribution of two phases.

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