• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
• /
• pp.1384-1387
• /
• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• The Korean Journal of Ceramics
• /
• 제1권1호
• /
• pp.21-28
• /
• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• 한국진공학회지
• /
• 제12권S1호
• /
• pp.83-87
• /
• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• 한국세라믹학회지
• /
• 제27권7호
• /
• pp.841-850
• /
• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• 한국세라믹학회지
• /
• 제36권12호
• /
• pp.1335-1341
• /
• 1999

The electrical conductivity ($\sigma$) of TiO2 doped with 0.05-4.0mol% Nb2O5 was measured in the oxygen partial pressure range of 10-17 to 100 atm and temperature range of 1100 to 130$0^{\circ}C$ to investigate the electrical properties and defect types. The oxygen partial pressure dependence of the electrical conductivity (log$\sigma$/logPo2) above 110$0^{\circ}C$ was divided into the four regions. From these experimental results the following defect regions were proposed ; 1) Magneli phase(extended defect) 2) reduced rutile region where intrinsic defect predominates 3) nearly stoichiometric region which is independent on the oxygen partical pressure and 4) overstoichiometric region which is not observed in pure TiO2 The electrical conductivity of Nb-doped TiO2 depended on the doping content the oxygen partial pressure and the measuring tem-perature.

• 한국전기전자재료학회논문지
• /
• 제16권9호
• /
• pp.775-782
• /
• 2003

In the study, the total conductivies in [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ (x- 0, 0.05, 0.1, 0.2) solid solution were measured as a function of temperature and oxygen partial pressure between 80$0^{\circ}C$ and 1,00$0^{\circ}C$ using 4-probe d.c method. Under pure oxygen atmospere, the oxygen ionic conductivity of [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ decreased with the concentration of Zr $O_2$At high oxygen partial pressure, the electrical conductivity is almost independent of oxygen partial pressure and decreased with the increase in Zr content. However, the electrical conductivity increase with decreasing oxygen partial pressure and is almost independent of Zr content at low oxygen partial pressure. Empirically, Total conductivity( $\sigma$ ) was expressed by the p$o_{2}$ -independent conductivity as $\sigma$$_{i}$, and the $p_{-1/4}$ $o_{2}$sup -dependent part as $\sigma$$_{e}$. Total, ionic and electronic conductivities fitted by data enabled to determine the transference number. The ionic transference number( $t_{i}$ ) decreased while the electronic transference( $t_{e}$ ) increase with the increase in Zr content and p$o_{2}$.

• Transactions on Electrical and Electronic Materials
• /
• 제3권2호
• /
• pp.24-27
• /
• 2002

The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1%O$_2$+99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ film 1,06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during: the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{y}$ prepared under low oxygen partial pressure was distinctively improved.d.d.d.

• Progress in Superconductivity
• /
• 제10권2호
• /
• pp.133-138
• /
• 2009

The $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$(Nd123) superconductor exhibits high performance in high magnetic field and high temperature. We have studied phase stability for Nd123 under reduced oxygen partial pressure and various heat-treatment conditions. The main phase is Nd123 and some samples contain small amounts of Nd422 depending on the temperature and oxygen partial pressure. The decomposition temperature decreases with decreasing oxygen partial pressure from $1052^{\circ}C(P(O_2)$=150 Torr) to about $845^{\circ}C(P(O_2)$=0.1 Torr). The liquidus line was steeper temperature with decreasing oxygen partial pressure. In same condition of oxygen partial pressure, the region of stable Nd123 phase was formed at slightly higher temperature than the region of stable YBCO phase.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.263-266
• /
• 2003

The fine $YBa_2Cu_3O_x$ powder ($0.2{\sim}1.0\;{\mu}m$) is produced by sol-gel method, and electrophoresis deposition is used for the preparation of $YBa_2Cu_3O_x$ thick films which are deposited on Ag wire. The oriented $YBa_2Cu_3O_x$ was tried to be prepared by the zone-melting method under low oxygen partial pressure. The orientation and the phase composition were examined by the X-ray diffraction and the superconductivities were measured by 4 line method. The critical current densities are still quite low, which may be due to unsuitable technical parameters for zone-melting of $YBa_2Cu_3O_x$ thick films. Therefore the heat treatment condition and controlling of low oxygen partial pressure should be improved in the future experiment.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.435-438
• /
• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.