• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2014년도 추계학술대회 논문집
• /
• pp.112-113
• /
• 2014

The submicron-rods of $Cu_2O$ with diameters of 100-700 nm and lengths of $2-8{\mu}m$ were synthesized by radio frequency magnetron sputtering. The abundance of Cu species, which is modulated by the $Ar/O_2$ ratio during the sputtering process affect directly to the growths of the $Cu_2O$ branches on the bodies of the submicron-rods. Transmission electron microscopy and elemental mapping reveal that metallic Cu are existed on the heads of the $Cu_2O$ rods. The growth rate, catalyst phase and shape reveal that vapor-quasiliquid-solid was the growth mechanism of the formations of those structures.

• 한국세라믹학회지
• /
• 제32권12호
• /
• pp.1392-1400
• /
• 1995

WC-10wt%Co-Al2O3 ceramic composites, using both the SHS (Self-propagating High Temperature Synthesis) synthesized WC powder method and commercial WC powder, were prepared by varing WC-Co/Al2O3 vol% ratio and sintering temperature (1350℃∼1650℃) for 1 hr in Ar atmosphere. Mechanical characterization has been investigated by Instron meterial testing system and Vicker's hardness test. Compositional and structural chracterizations were carried out by energy-dispersive analysis of X-ray (EDAX) data and scanning electron microscope (SEM). Electrical characterization was carried out by the electrical resistivity measurement using 4-point probe method. As sintering period increased and Al2O3 contents decreased in WC-10wt%Co-Al2O3 ceramic composite, shrinkage and relative density increased, resulting in maximum values at 1600℃. Also the major matrix phase changed with increasing Al2O3 content from 0 to 100 vol%. It was also identified by SEM, EDAX, and electrical resistivity measurement. Based on the results of analysis of flexural strength, toughness and hardness, the mechanical properties of WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were better than those WC-10wt%Co-Al2O3 ceramic composites using commercial WC powder because WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were sintered very well due to small initial particle size. By the addition of 40 vol% Al2O3 [60(WC=10wt%Co)-40Al2O3], it was possible to obtain a proper candidate as a superalloy.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1250_1251
• /
• 2009

The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio and RF power, respectively. Also, The capacitance of SBN thin films were increased with the increase of deposition temperature.

• 한국재료학회지
• /
• 제12권4호
• /
• pp.240-247
• /
• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

• 한국세라믹학회지
• /
• 제43권1호
• /
• pp.38-41
• /
• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• 한국자기학회지
• /
• 제11권5호
• /
• pp.196-201
• /
• 2001

Si(100)/Ta(50 )/NiFe(60 )/FeMn(250 )/NiFe(70 )/Al$_2$O$_3$/NiFe(150 )/Ta(50 )구조를 가진 자기터널접합의 자기저항비 향상에 관해서 연구하였다. 자성층과 절연층 사이 계면에 CoFe을 삽입하여 5.75%에서 13.7%까지 향상시켰다. 그리고 절연층은 16 의 Al을 순수한 산소 및 산소/아르곤 혼합 분위기에서 프라즈마 산화법으로 형성하였다. 순수한 산소 분위기에서는 최적 산화시간 30초에서 13.7%의 자기저항비를 얻었지만,산소/아르곤의 혼합기체를 사용하면 최적 산화시간 40초에서 15.3%의 자기저항비를 얻었다.

• 한국전기전자재료학회논문지
• /
• 제27권12호
• /
• pp.831-836
• /
• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• 한국자기학회지
• /
• 제5권1호
• /
• pp.42-47
• /
• 1995

자기 유도 헤드용 FeN 박막을 RF diode reactive 스퍼터 방법으로 Corning 7059 유리 기판 위에 증착하여 그 자기적 특성을 측정하였다. FeN 박막의 자기적 특성은 박막 두께, 가스 압력, 스퍼터 파워, $N_{2}$와 Ar의 유량비에 큰 영향을 받았다. 스퍼터 파워 800 W, 가스 압력 3 mT, 질소와 아르곤의 유량비 6.6 : 100, 단층 박막의 두께를 $1,000\;{\AA}$에서 $6,000\;{\AA}$으로 변화시키며 보자력의 변화를 측정 하였다. 두께가 $30\;{\AA}$인 $SiO_{2}$ 층을 사이층으로 하여 전체 박막 두께를 $6,000\;{\AA}$으로 고정하고 7층까지 증착한 시편의 보자력과 포화 자화값을 측정하였다. 단층 박막 두께에 따른 자화용이 방향의 보자력은 두께가 증가할수록 감소하였으며 $3,000\;{\AA}$ 이상에서는 거의 변화가 없었다. FeN 다층 박막의 경우 층수가 증가함에 따라 보자력은 감소하였다. X 선 회절 선폭으로 부터 결정립의 크기를 계산한 결과 층수가 증가할수록 결정립의 크기가 $200\;{\AA}$에서 $120\;{\AA}$으로 점차 감소하였다. 최소 보자 력은 4층 박막에서 자화 곤란 방향으로 0.4 Oe을 얻었다. 투자율 측정 결과 최대 상대 투자율은 2,900이었으며, 이들 박막의 차단 주파수는 100 MHz 이상이었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권9호
• /
• pp.397-402
• /
• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 하계학술대회 논문집 C
• /
• pp.1496-1498
• /
• 2003

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].