• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.367-368
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• 2007

To investigate the 2nO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by RF sputtering system. Gas ratios and work pressure is Ar : $O_2$ = 4 : 1 and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at 300, 450, and $650^{\circ}C$. The current-voltage, responsivity and quantum efficiency of devices were studied and compared with each devices.

• East Asian mathematical journal
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• v.19 no.1
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• pp.27-39
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• 2003

Integral inequalities of Gruss type obtained via $P\acute{o}lya-Szeg\ddot{o}$ and Shisha-Mond results are given. Some applications for Taylor's generalized expansion are also provided.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.295-304
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• 1995

Stabilization of the perovskite phase and sequence of reactions occuring during calcination were studied with solid solutions formed between Pb(Zn1/3Nb2/3)O3 and Pb(Fe1/2Nb1/2)O3. In the PZN-PFN composition of equal molar ratio, rhombohedral type pyrochlore phase (Pb2Nb2O7) and PbO-rich distorted cubic type pyrochlore phase (Pb3Nb2O8) were coexisted as intermediate phases at temperatures below 85$0^{\circ}C$, and these phases transformed to a stable cubic type pyrochlore phase, Pb3Nb4O13 solid solution and a perovskite solid solution at temperatures above 85$0^{\circ}C$. The major stable phase as increasing sintering temperatures was a perovskite phase in this binary system and prominent suppression of the pyrochlore phase was achieved by substituting Zn2+ with Fe3+ or by increasing sintering temperature. The composition containing 20mol% PZN possessed the best dielectric properties, and the dissipation factor was lower than 5% in all compositions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1675-1682
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• 2007

Large colorless single crystals of faujasite-type zeolite with diameters up to 200 μm have been synthesized from gels with the composition of 3.58SiO2:2.08NaAlO2:7.59NaOH:455H2O:5.06TEA:1.23TCl. Two of these, colorless octahedron about 200 μm in cross-section have been treated with aqueous 0.1 M TlC2H3O2 and KNO3 in order to prepare Tl+- and K+-exchanged faujasite-type zeolites, respectively, and then determined the Si/Al ratio of the zeolite framework. The crystal structures of |Tl71|[Si121Al71O384]-FAU and |K53Na18|[Si121Al71O384]-FAU per unit cell, a = 24.9463(2) and 24.9211(16) A, respectively, dehydrated at 673 K and 1 × 10-6 Torr, have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd m at 294 K. The two single-crystal structures were refined using all intensities to the final error indices (using only the 905 and 429 reflections for which Fo > 4σ(Fo)) R1/R2 = 0.059/0.153 and 0.066/0.290, respectively. In the structure of fully Tl+-exchanged faujasite-type zeolite, 71 Tl+ ions per unit cell are located at four different crystallographic sites. Twenty-nine Tl+ ions fill site I' in the sodalite cavities on 3-fold axes opposite double 6-rings (Tl-O = 2.631(12) A and O-Tl-O = 93.8(4)o). Another 31 Tl+ ions fill site II opposite single 6-rings in the supercage (Tl-O = 2.782(12) A and O-Tl-O = 87.9(4)o). About 3 Tl+ ions are found at site III in the supercage (Tl-O = 2.91(6) and 3.44(3) A), and the remaining 8 occupy another site III (Tl-O = 2.49(5) and 3.06(3) A). In the structure of partially K+-exchanged faujasite-type zeolite, 53 K+ ions per unit cell are found at five different crystallographic sites and 18 Na+ ions per unit cell are found at two different crystallographic sites. The 4 K+ ions are located at site I, the center of the hexagonal prism (K-O = 2.796(8) A and O-K-O = 89.0(3)o). The 10 K+ ions are found at site I' in the sodalite cavity (K-O = 2.570(19) A and O-KO = 99.4(9)o). Twenty-two K+ ions are found at site II in the supercage (K-O = 2.711(9) A and O-K-O = 94.7(3)o). The 5 K+ ions are found at site III deep in the supercage (K-O = 2.90(5) and 3.36(3) A), and 12 K+ ions are found at another site III' (K-O = 2.55(3) and 2.968(18) A). Twelve Na+ ions also lie at site I' (Na-O = 2.292(10) and O-Na-O = 117.5(5)o). The 6 Na+ ions are found at site II in the supercage (Na-O = 2.390(17) A and O-Na-O = 113.1(11)o). The Si/Al ratio of synthetic faujasite-type zeolite is 1.70 determined by the occupations of cations, 71, in two single-crystal structures.

• Journal of Physiology & Pathology in Korean Medicine
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• v.19 no.3
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• pp.729-735
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• 2005

This study was to analyze the difference between blood type and blood constitution according to Sasang constitution. The subjects were 302 men who visited blood donation house. Data collection was performed by using questionnaire that included three types of Sasang constitution. The data were analyzed as frequency, percentage, ${\chi}$2-test and ANOVA using SPSS 10.0 WIN Program. There was significant difference statistically in frequency of blood type as per Sasang constitution(${\chi}$2 =53.254, p=.000). Soyangin got most number in B type(34.7%), O type(26.7%), A type(21.8%), AB type(16.8%) in order. Taewumin got most number in O type (45.8%), A type(31.3%), B type(22.1%) and AB type(0.8%) in order, and in case of Sowumin, most in A type(54.3%), B type(24.3%), O type (11.4%) and AB type(10.0%) in order. In weight, height, fatness, hemoglobin, Hematocrit, platelet, ALT, AST and cholesterol, it appears that there is significant difference according to Sasang constitution. If proper regimen according to Sasang constitution by grasping the special features as per Sasang constitution through analyzing the difference as per Sasang constitution based on the results of above study is applied.

• Journal of Environmental Science International
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• v.28 no.11
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• pp.971-981
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• 2019

This study evaluated the photocatalytic oxidation efficiency of volatile organic compounds by $Cu_2O-TiO_2$ under visible-light irradiation. $Cu_2O-TiO_2$ was synthesized by an ultrasonic-assisted method. The XRD result indicated successful p-n type photocatalysts. However, no diffraction peaks belonging to $TiO_2$ were observed for the $Cu_2O-TiO_2$. The Uv-vis spectra result revealed that the synthesized $Cu_2O-TiO_2$ can be activated under visible-light irradiation. The FE-TEM/EDS result showed the formation of synthesized nanocomposites in the commercial P25 $TiO_2$, the undoped $TiO_2$, and $Cu_2O-TiO_2$ and componential analysis in the undoped $TiO_2$ and $Cu_2O-TiO_2$. The photocatalytic oxidation efficiencies of benzene, toluene, ethylbenzene, and o-xylene with $Cu_2O-TiO_2$ were higher than those of P25 $TiO_2$ and undoped $TiO_2$. These results indicate that the prepared $Cu_2O-TiO_2$ photocatalyst can be applied effectively to control gaseous BTEX.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.58.1-58.1
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• 2014

Energetic gas outflows from active galactic nuclei (AGNs) may have a crucial role in galaxy evolution. In this contribution, we present a census of ionized gas outflows using a large sample (~23,000) of local (z < 0.1) type-2 AGNs selected from the Sloan Digital Sky Survey DR 7. By measuring the velocity offset of narrow emission lines, i.e., [O III] ${\lambda}5007$ and the Balmer lines, with respect to the systemic velocity measured from the stellar absorption lines, we find ~47% of AGNs showing an [O III] line-of-sight velocity offset ${\geq}20km\;s-1$. The fraction in type-2 AGNs is similar to that in type-1 AGNs after considering the projection effect. AGNs with larger [O III] velocity offsets, in particular with no or weak $H{\alpha}$ velocity offsets, tend to have higher Eddington ratios, implying that the [O III] velocity offset is related to on-going black hole activity. Also, we find the different distributions of the host galaxy inclination between the AGNs with blueshifted [O III] and the AGNs with redshifted [O III], supporting the model of biconical outflow with dust obscuration. Meanwhile, for ~3% of AGNs, [O III] and $H{\alpha}$ exhibit comparable large velocity offsets, suggesting a more complex gas kinematics than decelerating outflows in the narrow-line region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.