Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Analysis on the Electrical.Optical Properties and Fabrication of ZnO Based UV Photodetector with p-type Inversion Layer

p형 반전층을 갖는 ZnO계 자외선 수광소자의 제작과 전기적.광학적 특성 분석

  • 오상현 (원광대학교 전기전자 및 정보공학부) ;
  • 김덕규 (청주대학교) ;
  • 최대섭 (서일대학교) ;
  • 박훈배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2007.06.21
Download PDF
⟨ Previous Next ⟩

Abstract

To investigate the 2nO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by RF sputtering system. Gas ratios and work pressure is Ar : $O_2$ = 4 : 1 and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at 300, 450, and $650^{\circ}C$. The current-voltage, responsivity and quantum efficiency of devices were studied and compared with each devices.

Keywords