• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.883-888
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• 2007

Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.367-368
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• 2007

To investigate the 2nO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by RF sputtering system. Gas ratios and work pressure is Ar : $O_2$ = 4 : 1 and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at 300, 450, and $650^{\circ}C$. The current-voltage, responsivity and quantum efficiency of devices were studied and compared with each devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.370-371
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• 2007

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by. RF sputtering system. Substrate temperature and work pressure is $100^{\circ}C$ and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. For sample deposited at $300^{\circ}C$, we observed full width at half maximum (FWHM) of 0.240 and good surface morphology.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.6
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• pp.203-211
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• 1984

MOS silicon solar cells have been developed using the fixed (interface) charge inherent to thermally oxidized silicon to induce an n-type inversion layer in 1-10 ohm-cm p-type silicon. Higher collection efficiencies are predicted than for diffused junction cells. Without special precautions a conversion efficiency of 14.2% is obtained. A MOS silicon solar cell is described in which an inversion layer forms the active area which is then contacted by means of a MOS grid. The highest efficiency is obtained when the resistivity of the substrate is high.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.242-242
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• 2010

산화 알루미늄($Al_2O_3$) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과 $O_2$를 이용하였다. $Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$)를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Membrane Journal
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• v.8 no.3
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• pp.157-169
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• 1998

The effects of solvents (DMAc, NMP, 1,4-dioxane) and nonsolvents ($H_2O$, Methanol, n-hexane) on the morphology of 6FDA-p-TeMPD polyimide membrane, prepared by the wet phase inversion method, were studied. In the polymer/solvent/nonsolvent ternary system, the binodal curve, the coagulation value and the relative light transmission were measured, and the solubility parameter difference was calculated. The onset state and rate of liquid-liquid alemixing were predicted and the morphology of membrane was analyzed. It is found that the finger-like pores are formed within discontinuous polymer nodules when the binoclal curve is close to the polymer-solvent (P-S) axis, the coagulation value is small, the reduction of light transmission is easy to occur and the order of solubility parameter difference ($\Delta \delta_{i-j}$) is $\Delta \delta_{S-NS} > \Delta \delta_{P-NS} > \Delta \delta_{P-S}$. The dense skin with small nodules and the sponge type sublayer with macrovoid are formed in the case that the binodal curve is distant from the P-S axis, the onset time of liquid-liquid demixing is long and the order of $\Delta \delta_{i-j}$ is $\Delta \delta_{P-NS} >(\Delta \delta_{S-NS} < > \Delta \delta_{P-S})$. The thick layer of fine nodule coagulation and loosely grown sublayer of nodules appear when the binodal curve is distant from the P-S axis, the onset time of liquid-liquid demixing is very long and the order of $\Delta \delta_{i-j}$가 $\Delta \delta_{S-NS} > (\Delta \delta_{P-NS}$\lessgtr$ > (\Delta \delta_{P-NS} < >)\Delta \delta_{P-S}$ ).

• 한국지구물리탐사학회:학술대회논문집
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• 2000.09a
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• pp.132-146
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• 2000

Seismic refraction survey was performed for 10 lines along NE-SW and NW-SE directions above Nampoong gallery at Makyo-ri, Dogye, Samcheok, Kangwon-do. 48 geophones were laid in line with the interval of 1m, and a 5Kg hammer was used as a source at 5 points for each line. Data processing was done using reciprocal time method, GRM, and traveltime tomography which utilizes wavefront expansion method for forward process and STRT for inversion. The result shows that the first layer has its lower boundary between 3.49m and 8.88m. The P-wave velocity of the first and the second layer were estimated as 270${\~}$360m/s and 1550${\~}$1940m/s respectively. When the boundary of the first and second layer is smooth enough and the velocity difference is large enough, GRM has little advantage over reciprocal time method. The result of reciprocal method and traveltime tomography shows consistency. The northeast part of the boundary has syncline structure, which is similar to the topography above. This implies that the collapse of the cavities of Nampoong gallery result in the subsidence of the ground surface. The subsidence is in progress across the Youngdong railroad, therefore a proper reinforcement work is required.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.106-106
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• 2000

반도체 소자가 미세화 됨에 따라 게이트 유전막으로 사용되는 SiO2의 박막화가 요구되나, boron penetration에 의한 Vt shift, 게이트 누설전류, 다결정 실리콘 게이트의 depletion effect 그리고 quantum mechanical effect 때문에 ~20 급에서 한계를 나타내고 있다. 이에 0.1$\mu\textrm{m}$이상의 design rule을 갖는 logic이나 memory 소자에서 요구되어지는 ~10 급 게이트 산화막은 SiO2(K=3.9)를 대신하여 고유전율을 갖는 재료의 채택이 필수 불가결하게 되었다. 고유전 박막 재료를 사용하면, 두께를 두껍게 해도 동일한 inversion 특성이 유지되고 carrier tunneling 이 덜하여 등가 산화막의 두께를 줄일 수 있다. 이러한 고유전박막 재료중 가장 활발히 연구되고 있는 재료는 Ta2O5, Al2O3, STO 그리고 BST 등이 있으나 Ta2O5, STO, BST 등은 실리콘 기판과 직접 반응을 한다는 문제를 가지고 있으며, Al2O3는 유전율이 낮의 재료가 최근 주목받고 있다. 본 실험에서는 ZrO2, HfO2 또는 그 silicates 등의 재료가 최근 주목 받고 있다. 본 실험에서는 ZrO2 박막의 증착조건에 따른 물리적, 전기적 특성 변화에 대하여 연구하였다. RCA 방식으로 세정한 P-type (100) 실리콘 기판위에 reactive DC sputtering 방법으로 압력 5mtorr, power 100~400W, 기판온도는 100-50$0^{\circ}C$로 변화시켜 ZrO2 박막을 증착한 후 산소와 아르곤 분위기에서 400-80$0^{\circ}C$, 10-120min으로 열처리하였다. 증착직후의 시편들과 열처리한 ZrO2 박막의 미세구조와 전기적 특성 변화를 관찰하였다. 우선 굴절율(RI)를 이용해 ZrO2 박막의 밀도를 예측하여 power와 기판온도에 따라 이론값 2.0-2.2 에 근접한 구조를 얻은 후 XRD, XPS, AFM, 그리고 TEM을 사용하여 ZrO2 박막의 chemical bonding, surface roughness 그리고 interfacial layer의 특성을 관찰하였다. 그리고 C-V, I-V measurement를 이용해 capacitance, 유전율, 누설전류 등의 전기적 특성을 관찰해 최적 조건을 설정하였다.