• Journal of Powder Materials
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• v.15 no.1
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• pp.23-30
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• 2008

Ni-20Cr-20Fe-5Nb alloy with or without $Y_2O_3$ was manufactured by mechanical alloying process and consolidated by spark plasma sintering (SPS). The grain size of the alloy with $Y_2O_3$ was smaller than that of alloy without $Y_2O_3$ which results from the effect of $Y_2O_3$ suppressing grain growth. The tensile strength at room temperature was increased by the addition of $Y_2O_3$ but decreased abruptly at temperature above $600^{\circ}C$. It seems to result from the change of deformation mechanism due to fine grain size, that is, grain boundary sliding is predominant at above $600^{\circ}C$ while internal dislocation movement is predominant at below $600^{\circ}C$. After conventional heat treatment process of solution treatment and aging, a small amount of ${\delta}(Ni_3Nb)$ phase was formed in Ni-20Cr-20Fe-5Nb alloy while a large amount of ${\gamma}"(Ni_3Nb)$ was formed in Inconel 718 in the previous report. This is due to exhaustion of Nb content by the formation of NbC during consolidation.

• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.184-193
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• 2021

This study demonstrates formation behavior and morphological changes of PEO (Plasma Electrolytic Oxidation) films on AZ91 Mg alloy as a function of pre-treatment time in 1 M HF solution at 25 ± 1 ℃. The electrochemical behavior and morphological changes of AZ91 Mg alloy in the pre-treatment solution were also investigated with pre-treatment time. The PEO films were formed on the pre-treated AZ91 Mg alloy specimen by the application of anodic current 100 mA/cm² of 300 Hz AC in 0.1 M NaOH + 0.4 M Na₂SiO₃ solution. Vigorous generation of hydrogen bubbles were observed upon immersion in the pre-treatment solution and its generation rate decreased with immersion time. It was also found that 𝛽-Mg₁₇Al₁₂ in AZ91 Mg alloy was dissolved and a protective thin film of MgF₂ was formed on the AZ91 Mg alloy surface during the pre-treatment process in the 1 M HF solution. PEO film did not grow on the AZ91 Mg alloy specimen when the surface was not pre-treated and irregular PEO films with nodular defects were formed for the specimens pre-treated up to 1 min. Uniform PEO films were formed when the AZ91 Mg alloy specimen was pre-treated more than 3 min. The growth rate of PEO films on AZ91 Mg alloy increased significantly with increasing pre-treatment time.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.61-68
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• 2007

Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1570-1572
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• 2004

OLED(organic light-emitting diode)소자에 사용되는 ITO(Indium-tin oxide)전극에 Ar/$O_3$ 플라즈마 표면처리 함으로써 ITO전극에 표면상태의 개선에 좋은 영향을 미치는 것으로 나타났다. 13.56MHZ RF 플라즈마 장치를 이용하여 Ar/$O_3$ 플라즈마 처리한 후 AFM(atomic force microscopy)측정을 통해 표면 morphologyjroughless를 분석하고, XPS(X-Ray Photoelectron Spectroscopy)분석을 통해 표면의 화학적 조성비 분석을 수행 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.495-498
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• 2004

PDP use the mixture of inert gases to generate a discharge inside display pixels. Inside of PDP, there exist highly reactive conditions in the gap between two glass panels. MgO layer and phosphor have been investigated as a function of discharge and thermal process. Impurities such as CO, $CO_2$, OH and $H_2O$ in discharge region may deteriorate the characteristics of PDP operation during life time. Change of impurity generation of various MgO and phosphor surfaces were measured by using x-ray photoelectron spectroscopy(XPS) and quadropole mass spectrometer (QMS). Carbon containing species such as C, CO and $CO_2$ were drastically increased on the surfaces during discharge and thermal treatment. Carbon impurities on the MgO and phosphor are the dominant factor for their instability.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.921-924
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• 2006

In an attempt to enhance secondary electron emission characteristics of PDP, $12CaO{\cdot}7Al_2O_3$ electride was used as electron emission layer of PDP discharge cells. The compound was synthesized by Ca-treatment and its electron emission behavior during the glow discharge was measured. The results indicated that the spayed electride reduces the discharge voltage by ${\sim}20$ volts and decrease the discharge delay by more than 70%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Korean Journal of Pharmacognosy
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• v.43 no.4
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• pp.308-315
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• 2012

Opuntia humifusa known as the Eastern prickly pear have been used as a treatment of burns, diarrhea, asthma, rheumatism, gonorrhea, and diabetes in alternative medicine. O. humifusa is widely cultivated in the middle and southern provinces of Korea and distributed in North America. The aim of this study is to investigate anti-diabetic effect of O. humifusa stem (OHS) water or 80% MeOH extract using 3T3-L1 adipocytes and db/db mice animal models. OHS 80% MeOH extract at a dose of $250{\mu}g/ml$ significantly increased the glucose uptake and lipid accumulation compared with the control in 3T3-L1 adipocytes. Blood glucose, plasma total cholesterol and triglyceride levels were significantly reduced by oral treatment of OHS 80% MeOH extract (200 mg/kg BW) for 6 weeks in db/db mice. Also, the oral treatment of OHS 80% MeOH extract slightly changed the plasma insulin and insulin resistance levels in db/db mice, but were no significance in comparison to control. Glucose transporter(GLUT)4 expressions of adipose tissue and muscle were significantly increased more than that in the control. Therefore, these results suggest that OHS 80% MeOH extract inhibits the blood glucose level through regulation of lipid profile, insulin resistance, and GLUT4 expression in db/db mice and its diabetic effect is effective more than water extract.

• Polymer(Korea)
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• v.38 no.3
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• pp.358-363
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• 2014

Adhesion forces between acrylate imprinting resin and a surface treated atomic force microscope (AFM) tip were investigated. Compared to the untreated silicon tip, 38% of the adhesion force is reduced for the hydrophobic tip treated with $CH_4$ plasma whereas 1.6 time increases is found for the hydrophilic tip with $O_2$ plasma treatment. Such a measurement of the adhesion force using AFM provides very quantitative results on adhesion comparing to the crosscut adhesion test which gives qualitative results. Since the adhesion area becomes larger as the imprinting pattern size gets smaller, the surface treatment issue becomes more important in the nano-imprinting process.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.116-122
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• 2014

$Bi_2Sr_2CaCu_2O_x$(Bi-2212) and $Bi_2Sr_2Ca_2Cu_3O_y$(Bi-2223) high-Tc superconductors(HTS) have been manufactured by plasma spraying, partial melt process(PMP) and annealing treatment(AT). A Bi-2212/2223 HTS coating layer was synthesized through the peritectic reaction between a 0212 oxide coating layer and 2001 oxide coating layer by the PMP-AT process. The 2212 HTS layer consists of whiskers grown in the diffusion direction. The Bi-2223 phase and secondary phase in the Bi-2212 layer were observed. The secondary phase was distributed uniformly over the whole layer. As annealing time goes on, the Bi-2212 phase decreases with mis-orientation and irregular shape, but the Bi-2223 phase increases because a new Bi-2223 phase is formed inside the pre-existing Bi-2212 crystals, and because of the nucleation of a Bi-2223 phase at the edge of Bi-2212 crystals by diffusion of Ca and Cu-O bilayers. In this study the spray coated layer showed superconducting transitions with an onset Tc of about both 115 K, and 50 K. There were two steps. Step 1 at 115 K is due to the diamagnetism of the Bi-2223 phase and step 2 at 50 K is due to the diamagnetism of the Bi-2212 phase.