• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.137-137
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• 2004

• Journal of Microbiology and Biotechnology
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• 제14권1호
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• pp.188-192
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• 2004

The main aim of this study was to investigate the sterilization effects of microwave-induced argon plasma at atmospheric pressure on paper materials contaminated with fungi. Plasma-treated filter papers showed no evidence to an unaided eye of burning or paper discoloration due to the plasma treatment. All fungi were perfectly sterilized in less than 1 sec, regardless of strains. These results indicate that this sterilization method for paper materials is easy to use, requires significantly less time than other traditional methods and different plasma sterilization methods, and is also nontoxic.

• Journal of Welding and Joining
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• 제18권5호
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• pp.98-104
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• 2000

Aluminum alloys are being employed in automobile parts as strive to reduce overall vehicle weight to meet demands for improved fuel economy and reduction in vehicle emissions. Al-based composites reinforced with ceramic ($Al_2O_3,\;SiC,\;TiC\;and\;B_4C$) applications in a variety of components in automotive engines, such as liners, where the tribological properties of the material are important. In this study, Al-base composites reinforced with TiC particle powders has been developed for producing plasma spray coatings. The composite plasma spray powders were prepared Al-13Si-3Mg(wt%) alloy with TiC(40, 60 and 80wt%) particles ($0.2~5{\mu}textrm{m}$) by drum type ball milling. The composite powders ($36~76{\mu}textrm{m}$) were sprayed with plasma torch. Plasma sprayed coatings were heat-treated at $500^{\circ}C$ for 3 hours. The wear resistances of the plasma sprayed coatings were found to decrease with increasing TiC content and improved with heat treatment. AlSiMg-40% TiC heat-treated coatings were showed the best wear resistance in this study.

• 한국재료학회지
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• 제11권9호
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• 한국재료학회지
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• 제7권1호
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• pp.33-39
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• 1997

ECR PECVD법에 의해 $Pt/Ti/SiO_{2}/Si$ 다층 기판 위에 $480^{\circ}C$에서 순수한 페로브스카이트상의 PLT박막을 증착하였다. PLT 박막 증착전 ECR산소 플라즈마내에서의 $Pb(DPM)_{2}$ pre-flowing처리는 $Pb(DPM)_{2}$의 공급을 안정화시켜주며 박막증착초기에 Pb성분이 풍부한 분위기를 조성해 줌으로써 페로브스카이트 핵생성을 용이하게 하여 PLT박막 특성을 향상시켰다. Ti-source 유입량을 변화시킬 때 PLT박막의 증착특성, 조성, 결정상 그리고 전기적 특성을 관찰하였다. PLT박막은(100)으로 우선 배향되었으며 화학양론비가 잘 맞는 경우 높은 페로브스카이트 X-선 회절강도와 높은 유전율을 나타내었다.

• Macromolecular Research
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• 제11권6호
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• pp.511-513
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• 2003

Hydroxyl groups were introduced onto the surface of a silicon wafer by O$_2$ plasma treatment. Poly(l-lactide) (1-PLA) was attached onto the surface-modified silicon wafer by the ring-opening polymerization of l-lactide using the hydroxyl group as an initiator. Lamellar single crystals of 1-PLA were grown directly on the 1-PLA-attached silicon wafer from a 0.025% solution in acetonitrile at 5$^{\circ}C$. A well-separated, lozenge-shaped, monolayered lamellar single crystal was prepared because the 1-PLA-attached silicon wafer acts as an initial nucleus.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1501_1502
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• 2009

Plasma treatment time was optimized to maximize the bonding strength between silicon and quartz. Bonding strength between the silicon and quartz is related to a surface energy which can be calculated by contact angle measurement. It was found that optimized time to get maximized surface energy was 15 sec. Silicon and quartz wafers were treated with $O_2$ plasma under different time splits and then bonded together. Bonding strength of the bonded wafers was measured by shear test. It was verified that the highest bonding strength was obtained when the silicon and quartz wafers were treated for 15 seconds. The maximum bonding strength exceeded the fracture strength of silicon.

• 한국안전학회지
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• 제15권2호
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• pp.92-96
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• 2000

In this experiment, we studied about concentration characteristics of $NO_x$ and generation of ozone in the reactor of corona discharge type by using mixed gas of $NO/N_2$ and $N_2/O_2$. In the case of the initial NO concentration increased, decrease rate of NO concentration was weakened and discharge input power of minimum NO concentration became high. When NO concentration was high, NO decomposition limit was appeared. And NO reduction rate was decreased, when initial NO concentration and discharge input power increased. When discharge input power was 5W, we could know the most proper energy value for treatment of NO. When the concentration of initial NO increased, generation of ozone decreased and in the case of same concentration of NO, according to discharge input power increase, generation of ozone increased.

• Journal of Plant Biology
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• 제37권3호
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• pp.271-276
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• 1994

The possibility that 1-aminocyclopropane-1-carboxylic acid (ACC)-uptake may be dependent on the H+-gradient established across the plsma membrane was tested in protoplasts isolated from 2.5 day old mungbean hypocotyls. The ACC-induced ethylene production was inhibited when the H+-gradient was collapsed by the treatment with carbonycyamide-p-trifluro-methoxy-phenylhydrazone (FCCP). Moreover, the treatment with o-vanadate, a specific inhibitor of plasma membrane H+-ATPase, caused the inhibition of ethylene production. The ACC-induced ethylene production was inhibited by the treatemnt with verapamil (Ca2+-channel blocker), or ethylene glycol-bis($\beta$-aminoethyl ether) N, N, N', N'-tetraacetic acid (EGTA) (Ca2+-chelator). In contrast, the ehtylene production was stimulated by the application of A23187 (Ca2+ ionophore). The inhibitory effect of EGTA in the ethylene producton was magnified in the presence of A23187. From these results, we suggest that the external Ca2+ influx to the cytosol resulted in the stimulatin of ACC oxidase activity after ACC-uptake resulting from a H+-gradient across the plasma membrane.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.