Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on bonding characteristics of SoQ bonding according to surface treatment process conditions

표면처리 공정 조건에 따른 SoQ 접합의 접합 특성에 관한 연구

  • Kim, Jong-Wan (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Song, Eun-Seok (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Kim, Yong-Kweon (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Baek, Chang-Wook (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 김종완 (서울대학교 전기컴퓨터공학부) ;
  • 송은석 (서울대학교 전기컴퓨터공학부) ;
  • 김용권 (서울대학교 전기컴퓨터공학부) ;
  • 백창욱 (중앙대학교 전자전기공학부)
  • Published : 2009.07.14
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Abstract

Plasma treatment time was optimized to maximize the bonding strength between silicon and quartz. Bonding strength between the silicon and quartz is related to a surface energy which can be calculated by contact angle measurement. It was found that optimized time to get maximized surface energy was 15 sec. Silicon and quartz wafers were treated with $O_2$ plasma under different time splits and then bonded together. Bonding strength of the bonded wafers was measured by shear test. It was verified that the highest bonding strength was obtained when the silicon and quartz wafers were treated for 15 seconds. The maximum bonding strength exceeded the fracture strength of silicon.

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