• Title/Summary/Keyword: O-plasma treatment

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Adhesion of Cu on Polycarbonate with the Condition of Surface Modification and DC-Bias Sputtering Deposition (폴리카보네이트에서의 표면개질 조건과 DC-Bias Sputtering 증착에 따른 Cu 밀착성)

  • 배길상;엄준선;이인선;김상호;고영배;김동원
    • Journal of the Korean institute of surface engineering
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    • v.37 no.1
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    • pp.5-12
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    • 2004
  • The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the $Ar/O_2$ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophllic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the $Ar/O_2$ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investifated. Accelerated $Ar^{+}$ lons in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate. therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.C.

Interface State Control of Amorphous InGaZnO Thin Film Transistor by Surface Treatment of Gate Insulator (게이트 절연막의 표면처리에 의한 비정질 인듐갈륨징크옥사이드 박막트랜지스터의 계면 상태 조절)

  • Kim, Bo-Sul;Kim, Do-Hyung;Lee, Sang-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.693-696
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    • 2011
  • Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

Hot Corrosion Behavior of Plasma Sprayed 4 mol% Y2O3-ZrO2 Thermal Barrier Coatings with Volcanic Ash (플라즈마 용사법으로 제작된 4mol% Y2O3-ZrO2 열차폐코팅의 화산재에 의한 고온열화거동)

  • Lee, Won-Jun;Jang, Byung-Koog;Lim, Dae-Soon;Oh, Yoon-Suk;Kim, Seong-Won;Kim, Hyung-Tae;Araki, Hiroshi;Murakami, Hideyuki;Kuroda, Seiji
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.353-358
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    • 2013
  • The hot corrosion behavior of plasma sprayed 4 mol% $Y_2O_3-ZrO_2$ (YSZ) thermal barrier coatings (TBCs) with volcanic ash is investigated. Volcanic ash that deposited on the TBCs in gas-turbine engines can attack the surface of TBCs itself as a form of corrosive melt. YSZ coating specimens with a thickness of 430-440 ${\mu}m$ are prepared using a plasma spray method. These specimens are subjected to hot corrosion environment at $1200^{\circ}C$ with five different duration time, from 10 mins to 100 h in the presence of corrosive melt from volcanic ash. The microstructure, composition, and phase analysis are performed using Field emission scanning electron microscopy, including Energy dispersive spectroscopy and X-ray diffraction. After the heat treatment, hematite ($Fe_2O_3-TiO_2$) and monoclinic YSZ phases are found in TBCs. Furthermore the interface area between the molten volcanic ash layers and YSZ coatings becomes porous with increases in the heat treatment time as the YSZ coatings dissolved into molten volcanic ash. The maximum thickness of this a porous reaction zone is 25 ${\mu}m$ after 100 h of heat treatment.

Lifetime Prolongation of Poly (dimethylsiloxane) Surface Modification via 2-Hydroxyethyl Methacrylate Grafting for Electroosmotic Flow

  • Park, Eun-Soo;Yang, Sang-Sik
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.4
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    • pp.142-144
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    • 2004
  • To use Poly-dimethylsiloxane (PDMS) for the electrokinetic flow channel, the PDMS surface must be modified to be hydrophilic. With $O_2$ plasma treatment, it is difficult to maintain hydrophilicity for more than one day. In this paper, we present the chemical modification of the PDMS surface using 2-Hydroxyethyl methacrylate (HEMA) to prolong hydrophilicity lifetime. The oxide radicals generated temporarily on the PDMS surface by $O_2$ plasma are grafted with HEMA. Once the PDMS samples have been grafted, they demonstrate improved hydrophilicity retainment and electroosmotic flow characteristics compared to the untreated PDMS and the oxidized PDMS following the $O_2$ plasma process. This phenomenon was verified by the contact angles, Fourier transform infrared (FTIR) spectra and electro osmotic flow rates observed for more than 300 hours.

Verification of Bonding Force between PVP Dielectric Layer and PDMS for Application of Flexible Capacitive-type Touch Sensor with Large Dynamic Range (넓은 다이내믹 레인지의 유연 촉각센서 적용을 위한 PVP 유전층과 PDMS 접착력 검증)

  • Won, Dong-Joon;Huh, Myoung;Kim, Joonwon
    • The Journal of Korea Robotics Society
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    • v.11 no.3
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    • pp.140-145
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    • 2016
  • In this paper, we fabricate arrayed-type flexible capacitive touch sensor using liquid metal (LM) droplets (4 mm spatial resolution). Poly-4-vinylphenol (PVP) layer is used as a dielectric layer on the electrode patterned Polyethylene naphthalate (PEN) film. Bonding tests between hydroxyl group (-OH) on the PVP film and polydimethylsiloxane (PDMS) are conducted in a various $O_2$ plasma treatment conditions. Through the tests, we can confirm that non-$O_2$ plasma treated PVP layer and $O_2$ plasma treated PDMS can make a chemical bond. To measure dynamic range of the device, one-cell experiments are conducted and we confirmed that the fabricated device has a large dynamic range (~60 pF).

The effect of interfacial layer thickness on the interface dipole energy in $O_2$ plasma treated metal/organic interface

  • Kim, Soo-Young;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.115-117
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    • 2009
  • Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

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Stabilizing Properties of SiOF Film with Low Dielectric Constant by $N_2O$ Plasma Annealing ($N_2O$ 플라즈마 열처리에 의한 저유전율 SiOF 박막의 물성 안정화)

  • Kim, Yoon-Hae;Lee, Seok-Kiu;Kim, Sun-Oo;Kim, Hyeong-Joon
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.317-322
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    • 1998
  • The stabilization of low dielectric constant SiOF films prepared by conventional PECVD using TEOS and $C_2F_6$ was evaluated by the $N_2O$-plasma post-deposition annealing. Properties of SiOF film became unstable when it was air-exposed or heat-treated. Water absorption of SiOF films was increased as F content was increased due to the for¬mation of F -Si- F bonds. Also F content of SiOF films decreased after heat treatment. $N_2O$-plasma post-deposition annealing was proved to be effective on stabilizing SiOF films. which was mainly due to the formation of thin SiON layer near the top surface of films. However. the value of dielectric constant was greatly increased again when $N_2O$-plasma post-deposition annealing was done for a long time. To stabilize the SiOF films without an increase of dielec¬tric constant by $N_2O$- plasma post-deposition annealing. the annealing time should be kept the minimum value. to which stabilizing effects against air environment and heat treatment were preserved.

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Lymphatic Delivery of Oral Anticancer Tegafur by Emulsion Formulations

  • Lee, Yong-Bok;Koh, Ik-Bae
    • Journal of Pharmaceutical Investigation
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    • v.23 no.3
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    • pp.19-30
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    • 1993
  • The influence of emulsion type of tegafur, an oral anticancer agent, on lymphatic transport was studied in rats. The water-in-oil-type of emulsion and the oil-in-water-type emulsion of tegafur each in 50 mg, calculated in terms of tegafur, were prepared by adding tegafur aqueous solution to sesame oil containing hydrogenated castor oil following ultrasonic treatment, and then the prepared emulsions and aqueous solution as a comparative formulation were administered orally to rats (50 mg/5 ml/kg). The concentration levels of tegafur in plasma of femoral artery and lymph from thoracic duct cannula were measured simultaneously along a time course after administration and the pharmacokinetic parameters were investigated. At the same time, we examined the above described factors of 5-FU which is known as an active metabolite of tegafur. In comparison with tegafur solution, AUC and mean residence time of plasma tegafur were significantly increased in w/o-emulsion but significantly decreased in o/w-emulsion. Lymph flow rates were similar in both solution and w/o-emulsion but half in o/w-emulsion. Ratios between area under the lymph and plasma concentration time curves were always less than 1 reflecting the passive lymphatic delivery after oral administration of the prepared tegafur emulsions, but those to the 5-FU in the case of w/o-emulsion were more than 1. These results suggested that lymphatic delivery of tegafur by w/o-emulsion was more effective than that by o/w-emulsion due to its differences of formation ability of chylomicrons.

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The Characteristic Study of Plasma Electrolytic Oxidation in AZ31B Magnesium Alloy

  • Yu, Jae-Yong;Choi, Soon-Don;Yu, Jae-In;Yun, Jae-Gon;Ko, Hoon;Jung, Yeon-Jae
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1746-1751
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    • 2015
  • In this study low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate high voltage PEO drawbacks such as high cost, dimensional deformation and porosity. Low voltage PEO produces a thin coating which causes low corrosion resistance. In order to solve such problem, 0.1~0.6M pyrophosphates were added in a bath containing 1.4M NaOH, and 0.35M Na2SiO3. 70 V PEO was conducted at 25℃ for 3 minutes. Chemical composition, morphology and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg2SiO4, and Mg2O7P2. The morphology of film showed appropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide a good corrosion protection for the AZ31B magnesium alloy.

The Plasma Modification of Polycarbonate and Polyethersulphone Substrates for Ta2O5 Thin Film Deposition (Ta2O5 박막증착에서 플라즈마 전 처리를 통한 Polycarbonate와 Polyethersulphone 기판의 표면 개질)

  • Kang, Sam-Mook;Yoon, Seok-Gyu;Jung, Won-Suk;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.38-41
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    • 2006
  • Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.