• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.331-334
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• 2010

In the present study, carbon supports mixed with purified multi-walled carbon nanotubes (MWNTs) and carbon blacks (CBs) were used to improve the cell performance of direct methanol fuel cells (DMFCs). Additionally, the effect of $O_2$ plasma treatment on CBs/MWNTs supports was investigated for different plasma RF powers of 100, 200, and 300 W. The surface and structural properties of the CBs/MWNTs supports were characterized by FT-IR, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and inductive coupled plasma-mass spectrometer (ICP-MS). The electrocatalytic activity of PtRu/CBs/MWNTs catalysts was investigated by cyclic voltammetry measurement. In the experimental results, the oxygen functional groups of the supports were increased with increasing plasma RF power, while the average Pt particle size was decreased owing to the improvement of dispersibility of the catalysts. The electrochemical activity of the catalysts for methanol oxidation was gradually improved by the larger available active surface area, itself due to the introduction of oxygen functional groups. Consequently, it was found that $O_2$ plasma treatments could influence the surface properties of the carbon supports, resulting in enhanced electrocatalytic activity of the catalysts for DMFCs.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.152-160
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• 1992

High-Tc superconductor thick films of YBa2Cu$\chi$O7-y (X=3, 3.5, 4) of which thickness varies from 100 $\mu\textrm{m}$ to 200 $\mu\textrm{m}$ were successfully prepared by plasma spraying method, and the characteristics of thick film depending on copper content and heat treatment conditions were investigated. Regardless of heat-treated temperature, the specimens with X=3 were composed of YBa2Cu$\chi$O7-y, Y2BaCuO5 and BaCuO3 phases. The specimens with X=4, however, were composed of YBa2Cu$\chi$O7-y phase at all heat treatment conditions. The specimens with X=4 composition showed the best superconducting characteristics after heat treatment at 925$^{\circ}C$, and the superconducting transition temperature with zero resistivity (Tc,zero) was 87K. The thick film lost superconductivity when the specimens were heat-treated at 950$^{\circ}C$ because of interdiffusion between superconductor elements and bond coating elements and Y2BaCuO5 phase was found was found to be main phase at the interface.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.265-269
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• 2004

Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15～25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.8-13
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• 2007

This paper aims to analyze the characteristics of ITO which are caused by variation of plasma condition to fabricate the OLED of high efficiency. We treated $N_2$ gas and $O_2$ gas plasma on the surface of the ITO by changing their RF plasma power into 100 W, 200 W, 400 W and by changing their 9as pressure into 12 mTorr, 120 mTorr. The work function of ITO that plasma treatment was done by using $N_2$ gas had value of $4.88{\sim}5.07\;eV$, and that by using $O_2$ gas, $4.85{\sim}4.97 eV$. The characteristics of the ITO were most efficient in the $N_2$ gas plasma with the RF power of 200W and gas pressure of 120 mTorr. The rms roughness of ITO surface is the value from AFM image. In this case, ITO obtained $25.2\;{\AA}$ and $30.5\;{\AA}$ in the $N_2$ and $O_2$ gas plasma respectively when it had the RF power of 200 W. But ITO that didn't have plasma treatment was $44.5{\AA}$. The variation of ITO transmittance was almost not discovered by the change of $N_2$ gas and $O_2$ gas pressure.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.76-82
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• 1992

Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.19-24
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• 2010

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2276-2280
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• 2011

An indium-tin-oxide (ITO) is normally used as a substrate in organic photovoltaic cells. We examined the effects of an oxygen ($O_2$) plasma treatment on the electrical properties of an organic photovoltaic cell. Experiments with four-point probe method and atomic force microscope revealed the lowest surface resistance of 17.64 ${\Omega}$/sq and the lowest average surface roughness of 1.39 nm at the plasma treatment power of 250 W. A device structure of ITO/CuPc/$C_{60}$/BCP/$Cs_2CO_3$/Al was fabricated by thermal evaporation with and without the plasma treated ITO substrate. It was found that the power conversion efficiency of the cell with the plasma treated ITO is 65 % higher than the one without the plasma treated ITO.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.93-95
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• 2004

The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2$O$_3$, $Al_2$O$_3$- SiO$_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.