• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2001년도 추계학술강연 및 발표대회
• /
• pp.16-16
• /
• 2001

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.410-410
• /
• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• 대한화장품학회지
• /
• 제29권1호
• /
• pp.135-150
• /
• 2003

This study is described the stabilizing technology of water-in-oil (w/o) emulsion and the mechanism of emulsification with quaternium-18 hectorite (Q-18 HTRT) by swelling action. When Q-18 HTRT is dispersed in oil, it swells and constructs card-house structure adding ethanol, and formation of water phase is caused by hydrogen bonding. The gelling activities of Q-18 HTRT were excellent such as mineral oil, squalane, cetostearyl isononanoate, isostearic acid, cetyl octanoate, octyl dodecanol and so on. Especially, when oil gel containing Q-18 HTRT passed one to three times by Roll mill. It made the W/O emulsion cream (W/O-ECRM) having 2.0 w/w% of Q-18 HTRT and also produced the control sample (control) including 3.0 w/w% of cetyl PEG/PPG- l0/l dimethicone. The stability of after 24 weeks, Hardness of W/O-ECRM dropped 7.48%, whereas hardness of control went down 57 71%. As a result of these test emulsification of W/O-ECRM is superior compared with control. In cosmetic, 0-18 HTRT can use as suspending agent, oil adsorbent, emulsifying agent, dispersing agent, viscosifier and pigment.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1322_1323
• /
• 2009

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
• /
• pp.117-118
• /
• 2008

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 제39회 하계학술대회
• /
• pp.1248-1249
• /
• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.379-382
• /
• 1998

In this paper, the microwave dielectric properties of the yPb($Fe_{2/3}W_{1/3}$)$O_{3}$ - (1-y)($Pb_{x}Ca_{1-x}$)$ZrO_{3}$ system were investigated. It was found that an addition of Pb($Fe_{2/3}W_{1/3}$)$O_{3}$ promotes the grain growth, the solid solution between the Pb-based perovskite and the Ca-based perovskite and the decreasing of the sintering temperature. Especially, we found that 0.05Pb($Fe_{2/3}W_{1/3}$)$O_{3}$-0.95($Pb_{x}Ca_{1-x}$)$ZrO_{3}$ ceramic has not only lower sintering temperature but also better dielectric properties than those of the (Pb, Ca)$ZrO_{3}$ systems.

• The Korean Journal of Ceramics
• /
• 제6권3호
• /
• pp.304-308
• /
• 2000

WO$_3$/SnO$_2$ceramics has been suggested as an effective sensing material for monitoring offensive odor or pollutant gases. This work was focussed on improving long-term stability, which has been a principal problem generally taking place in SnO$_2$semiconductor gas sensor. Miniaturized thick film gas sensors were fabricated by screen printing technique. Two types of sensor materials, W doped SnO$_2$and WO$_3$mixed SnO$_2$, were comparatively investigated on those long-term stability and sensitivites to several gases. Small amount of W doping(0.1 mol%) into SnO$_2$largely improved the long-term stability. The W(0.1 mol%) doped SnO$_2$gas sensor had higher sensitivities to both acetone and alcohol compared with WO$_3$(5 wt%) mixed SnO$_2$gas sensor. On the contrary, WO$_3$(5 wt%) mixed SnO$_2$gas sensor showed more superior sensitivity to cigarette smoke due to larger W content.

• Bulletin of the Korean Chemical Society
• /
• 제30권1호
• /
• pp.107-113
• /
• 2009

This study investigated the decomposition activities of toluene on 10 mol% Al-W-incorporated mesoporous titano (15 mol %) silicates. The mesopore sizes observed in the transmission electron microscopy images ranged from 2.0 to 5.0 nm, and the pores were irregular on the addition of 10 mol% Al or W ions, but changed to regular hexagonal forms with the simultaneous additions of Al and W. The X-ray photon spectroscopy results showed a shift of the special peak for Ti2p in Al-incorporated mesoporous titanosilicates to a stronger binding energy compared to those of mesoporous titanosilicates and Al-incorporated mesoporous titanosilicates. Three O1s peaks in the spectra of the Al and W coexisted samples were observed at 530.5 and 531.7, 533, and 533.7eV, which were assigned to $Ti-Os\;in\;TiO_2\;and\;Ti_2O_3,\;Si-O\;in\;SiO_2\;and\;Al-O\;in\;Al_2O_3$, respectively. The toluene molecules desorbed at lower temperatures over W-incorporated mesoporous titanosilicates, and the amounts of toluene desorbed were also small; however, Al-incorporated mesoporous titanosilicates adsorbed much more toluene, particular over $Al_7.5-W_2.5-Ti_15-Si_75$. The photocatalytic decomposition of toluene was more enhanced over $Al_7.5-W_2.5-Ti_15-Si_75$ than over Al- or W-incorporated mesoporous titanosilicates only.

• 한국세라믹학회지
• /
• 제32권3호
• /
• pp.378-384
• /
• 1995

Effects of $La_2O_3$, $MnO_2$ on the dielectric and piezoelectric properties of $0.02Pb(Y_{2/3}W_{1/3}O_3-0.98Pb(Zr_{0.52}Ti_{0.48})O_3$ system were investigated. The addition of La2O3 to the system enhanced electromechanical coupling factor (kp), piezoelectric constant (d33), but hardly changed mechanical quality factor (Qm). On the other hand, the addition of $MnO_2$ increased Qm significantly, but did not degrade kp and d33 so much. The piezoelectric properties of $0.02Pb(Y_{2/3}W_{1/3}O_3-0.98Pb(Zr_{0.52}Ti_{0.48})O_3$ containing 0.1wt% $La_2O_3$, 0.4wt% $MnO_2$ were very good and kp, d33, Qm were 55%, 350$\times$10-12C/N, 780, respectively. The size of the grains was proportional to the change of c/a (tetragonality) ratio caused by the addition of $La_2O_3$ and $MnO_2$, and dielectric, piezoelectric properties were sensitive to the amountof pyrochrole phase.