• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.941-948
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• 1993

The powder mixture of Si3N4-AlN-Y2O3, Si3N4-AlN-CeO2 and Si3N4-AlN-Y2O3-CeO2 system was hot-pressed at 175$0^{\circ}C$ for 2h in N2 to prepare $\alpha$-Sialon ceramics. The mechanical property and oxidation behaviour of the prepared $\alpha$-Sialon ceramics were investigated. At 120$0^{\circ}C$, oxidation resistance was best for the Y2O3 added $\alpha$-Sialon ceramics and oxidation rate increased when the amount of CeO2 increased. But when the mixture of Y2O3 and CeO2 added $\alpha$-Sialon ceramics showed a good oxidation resistance. Fracture toughness of (Y2O3＋CeO2) added $\alpha$-Sialon ceramics was higher than Y2O3 added $\alpha$-Sialon ceramics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.106-106
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.174.2-174
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• 2002

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.501-512
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• 1990

Al2O3 and 0.25wt% MgO-doped Al2O3 powders were made from the alcohol solution of Al(NO3)3.9H2O and Mg(NO3)2.6H2O by spray pyrolysis method. Each powder was prepared at 900 and 100$0^{\circ}C$. Powders prepared at 90$0^{\circ}C$ were amorphous phase, but prepared at 100$0^{\circ}C$ wre mainly ${\gamma}$-Al2O3 crystalline form. Particle size of the MgO-doped Al2O3 powders was in the range of 0.2-2${\mu}{\textrm}{m}$, but undooped powders shwoed comparatively wider range of particle size. All the powders prepared at 900 and 100$0^{\circ}C$ were transformed to $\alpha$-Al2O3 crystalline form by calcination at 110$0^{\circ}C$ for 1hr. Each powder was sintered at 1600, 1650 and 1$700^{\circ}C$ for 2hrs. MgO-doped Al2O3 body sintering at 1$650^{\circ}C$ showed 99% of relative density but undooped Al2O3 showed 95% of relative density, even sintered at higher temperature of 1$700^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.15 no.1
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• pp.9-15
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• 1978

The possiblity of mullitization from the domestic alunite by adding of $Fe_2O_3-MnO_2$, $Fe_2O_3-MnO_2-TiO_2$, $Fe_2O_3-MnO_2-CaF_2$, and $Fe_2O_3-MnO_2-CaF_2-TiO_2$ mixtures as mineralizers was studied at the temperature range between $1, 250^{\circ}C$~$1, 430^{\circ}C$. The modifying method of domestic alunite was performed by calcination, wet ballmilling, and washing with water. The following results were obtained; 1) When added of 3.0% $Fe_2O_3$ plus 1.0-1.5% $MnO_2$ to modified alunite, the appropriate temperature range of mullite-forming was $1, 350^{\circ}C$-$1, 400^{\circ}C$. 2) When added of $TiO_2$ as mineralizer, the mullite-forming temperature was higher than not added. 3) When added of $CaF_2$ as mineralizer, the synthesized mullite was resolve at the temperature above $1, 350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.335-338
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• 1999

The effect of monoclinic $ZrO_2$(pure) and tetragonal $ZrO_2$ containing 5.35wt% $Y_2$$O_3$(Y-TZP) addition on the mechanical properties and thermal shock resistance of $Al_2$$O_3$ ceramic were investigated. The addition of $ZrO_2$(m) and Y-TZP increased sintering density of $Al_2$$O_3$. The vickers hardness increased with increasing the volume fraction of Y-TZP going through a maximum at 20wt%. The hardness of the specimens was found to be depend on the sintering density. With increasing the volume fraction of $ZrO_2$(m) and Y-TZP, the fracture toughness of the composite is increased. This result may be taken as evidence that toughening of ${Al_2}{O_3}$ can also be achieved by the transformation toughening and microcrack toughening of $ZrO_2$. The property of the& shock for ${Al_2}{O_3}$-$ZrO_2$ composites was improved by increasing the volume fraction of monoclinic $ZrO_2$(pure).Grain size increased with increasing the volume fraction of $ZrO_2$.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.511-516
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• 2002

Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{\cdot}5H_2O$ and $Mn(CH_3CO_2)_2{\cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${\circ}C$ and completed at 800${\circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{\times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.935-941
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• 2006

In this paper, the dielectric and piezoelectric properties of $0.4Pb(Ni_{1/3}Nb_{2/3})O_3+0.6Pb(Zr_{405}Ti_{595})O_3+X\;wt%\;Fe_2O_3$ ceramics were investigated with the addition of $Fe_2O_3$ and sintering temperature. Dielectric constant and piezoelectric constant increased with amount of $Fe_2O_3$ to 0.25 wt% and then decreased the further addition of $Fe_2O_3$. It seems that $Fe_2O_3$ acts as a sintering aid at the sintering temperature of $1150^{\circ}C$. By the addition of $Fe_2O_3$., sintering temperature of the system was lowered from $1250^{\circ}C\;to\;1100^{\circ}C$. The piezoelectric properties showed the maximum value of ${\varepsilon}r=4669,\;d_{33}=810(10^{-12}m/V)$, kp = 77 %, Qm = 55, in $0.4Pb(Ni_{1/3}Nb_{2/3})O_3\;-0.6Pb(Zr_{0.405}Ti_{0.595})O_3+0.25wt%\;Fe_2O_3$ ceramics having composition near the morphotropic phase boundary. The composition may be appropriate for actuator materials because of high piezoelectric constant and electromechanical coupling factor.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.453-457
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• 2005

Piezoelectric properties of $Pb(Mn_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ ceramics were investigated with $Al_2O_3$ content $(0.0-1.0 wt\%)$. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with $Al_2O_3$, indicating the MPB (morphotropic phase boundary) composition of tetragonal structures. The highest sintered density of $7.8 g/cm^3$ was obtained for $0.2wt\%\;Al_2O_3-doped$ specimen. Grain size increased by doping $Al_2O_3$ up to $0.3 wt\%$, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping $Al_2O_3$ up to $0.2wt\%$, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in $O^{2-}$ ion sites and the substitution of $Al^{3+}$ ions.