• Title/Summary/Keyword: O$_3$

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A Study on the Synthesis and Properties of Additives Coated BaTiO3 (첨가제가 Coating된 BaTiO3의 합성 및 특성에 관한 연구)

  • Park, Jae-Sung;Kim, Young-Tae;Hur, Kang-Heon;Han, Young-Ho
    • Journal of the Korean Ceramic Society
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    • v.46 no.2
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    • pp.189-199
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    • 2009
  • The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. $BaTiO_3$ powders were synthesized by the liquid mix method developed by Pechini, and silica coating was prepared by alkoxide hydrolysis method with TEOS and ethanol. The particle size of the $BaTiO_3$ powders was 35 nm and the thickness of the $SiO_2$ coating layer was 5 nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion by increasing electrostatic repulsion between the $BaTiO_3$ particles. Effects of MgO coating on microstructure and dielectric properties of $BaTiO_3$ have been studied compared with mechanically MgO mixed $BaTiO_3$. MgO coated $BaTiO_3$ particles were prepared by a homogeneous precipitation method using $MgCl_2\cdot 6H_2O$ and urea. MgO coated $BaTiO_3$ exhibited homogeneous microstructure compared with mixed samples. XRD analysis revealed that Mg substitution for the Ti site in the MgO mixed sample was much greater than in the coated one. Electrical properties of MgO mixed and coated $BaTiO_3$ were affected by the diffusion behavior of Mg in $BaTiO_3$ lattice.

Preparation of M Type Hexa-Ferrite Using the Mill Scale (Mill Scale을 이용한 M형 Ferrite의 합성)

  • 오영우
    • Journal of the Korean Magnetics Society
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    • v.6 no.4
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    • pp.204-210
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    • 1996
  • M type hexa-ferrites were prepared by means of a solid state reaction using mill scale, $Fe_{2}O_{3}$, and the mixture of mill scale and $Fe_{2}O_{3}$. The mixture of powders were calcined at $1150^{\circ}C$ for 2 hrs. and sintered at $1250^{\circ}C$ for 2 hrs, with varing the mole ratio of $Fe_{2}O_{3}$/$BaCO_{3}$, by 5.2~6.0. And the magnetic properties and morphologies of Baferrites with impurities such as $SiO_{2},\;Al_{2}O_{3},\;MgO,\;CaO\;and\;Na_{2}O$ in the mill scale were investigated. The magnetic properties were worsened by the addition of $Na_{2}O because of non-reacted iron oxide and intermediate compound of $BaFe_{2}O_{4}$ but they were improved apparently by the addition of $Si_{2}$ and $Al_{2}O_{3}$ in the composition of $BaO.5.6Fe_{2}O_{3}$. Moreover, $M_{s}$ decreased but $_{B}H_{C}$ increased through the addition of $Al_{2}O_{3}$ in Ba-ferrite. ${(BH)}_{max}$ of sintered BM($BaCO_{3}$, mill scale mixture) and BFM($BaCO_{3}$, $Fe_{2}O_{3}$, and null scale mixture) were 0.86 and 1.04 MGOe, respectively, and the magnetic properties were changed around $440^{\circ}C$.

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Effect of $Al_2O_3$ pre-layers formed using protective Si-oxide layer on the growth of ultra thin ${\gamma}-Al_2O_3$ epitaxial layer (보호용 실리콘 산화막을 이용하여 제조된 $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$ 에피텍시의 성장에 미치는 영향)

  • Jung, Young-Chul;Jun, Bon-Keun;Ishida, Makoto
    • Journal of Sensor Science and Technology
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    • v.9 no.5
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    • pp.389-395
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    • 2000
  • In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

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Aging Behavior and Electric Field Induced-Domain Stabilization in Cr2O3 Doped Pb(Zr0.525 Ti0.475)O3 System (Cr2O3첨가 Pb(Zr0.525 Ti0.475)O3계에서의 시효거동과 전계유도 Domain 안정화)

  • 한이섭;김호기
    • Journal of the Korean Ceramic Society
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    • v.24 no.5
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    • pp.477-483
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    • 1987
  • Cr2O3 doped Pb(Zr0.525 Ti0.475)O3 piezoelectric ceramics were prepared from reagent grade oxide mixture, PbO, ZrO2, TiO2 and Cr2O3. Piezoelectric and aging properties of specimens were measured for various additions of Cr2O3. Generally, it has been known that aging rate decreased with Cr2O3 addition by stabilizing the domain wall. But hysteresis loops showed that the domain destabilization was occurred at high electric field (larger than 10KV/cm). In smaller additions of Cr2O3 (0-0.2mol%), aging rate increased and microcracks were created with increasing poling filed due to increasing internal stress. In larger additions of Cr2O3(0.4∼0.6mol%), aging rate decreased with increasing poling field.

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Effect Of $Al_2O_3$on the Crystallization Of MgO-CaO-${SiO_2}-{P_2O_5}$ Bioglass-Ceramic System (I) (MgO-CaO-${SiO_2}-{P_2O_5}$계 Bioglass-Ceramic의 결정화에 미치는 $Al_2O_3$ 첨가의 영향(I))

  • 이민호;배태성
    • Journal of Biomedical Engineering Research
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    • v.15 no.2
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    • pp.189-194
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    • 1994
  • Effects of ${AI_2O_3}/{P_2O_5}$ ratio on the crystallization of a series of glasses with the nominal composition of 41.4wt % $SiO_2$, 35.0wt % CaO, 20.6wt % (${P_2O_5}$+${AI_2O_3}$) and 3.0wt% MgO were investigated with DTA, XRD and SEM. The major crystalline phases are apatite and anorthite. The glass transition temperature ($T_g$) and the softening point ($T_s$) are shifted to the upper temperature by increasing $AI_2O_3$ content. The temperature of apatite crystallization ($T_{p1}$) is increased by $AI_2O_3$ content, but the tempera¬ture of anorthite crystallization ($T_{p2}$) is not affected significantly. With increased of $AI_2O_3$, the apatite crystallization is decreased, but anorthite crystallization is increased.

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Preparation of $SnO_2$ Semiconducting Gas Sensor by Wet Process (습식방법에 의한 $SnO_2$ 반도체 가스센사 제조)

  • 전병식;김홍대;최병현;최성근
    • Journal of the Korean Ceramic Society
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    • v.23 no.3
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    • pp.53-61
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    • 1986
  • A gas sensor which has been made by wet process had fabricated by coating each of the mixture on alumina tube and firing at 85$0^{\circ}C$ for 3hrs. A gas concentration such $H_2$, CO, $C_3H_8$, $C_2H_2$ and $CH_4$ vs its detection voltage characteristics has been in-vestigated on $SnO_2-In_2O_3-MgO$ system doped with PdO, $La_2O_3$, $ThO_2$, NiO and $Nb_2O_5$ The optimum sensitivity composition for various gases were 90w/o $SnO_2$-9w/o $In_2O_3$-1w/o MgO for $H_2$, $C_2H_2$ CO and $C_3H_8$ and 95w/o $SnO_2$-4w/o $In_2O_3$-1w/o MgO for $CH_4$. The sample which has been made by wet process than dry process had predominated sensitivity for each gases and particle size of the sample coprecipitated with PH=9 was 0.1${\mu}{\textrm}{m}$ The $SnO_2$-In2_O_3-MgO$ system doped with 2w/o $Nb_2O_5$ and NiO was the most sensitive for $H_2$ and $C_2H_2$ gas. In $SnO_2$-In2_O_3-MgO$ system doped with $ThO_2$ the sensitivity of $H_2$ gas was decreased but CO gas was in-creased when dopant con was increased.

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The Microstructure and Electrical Characteristics of High Voltage ZnO Varistors with $Sb_2O_3$Additive ($Sb_2O_3$가 첨가된 고전압 ZnO 바리스터의 미세 구조 및 전기적 특성)

  • Oh, Soo-Hong;Jung, Woo-Sung;Hong, Kyung-Jin;Lee, Jin;Kim, Tae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.369-372
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    • 2000
  • ZnO varistor is studied to sintering condition and mixing condition for the improvement to non linear of electrical characteristics. In this paper, ZnO varistor, ZnO-Bi$_2$O$_3$-Y$_2$O$_3$-MnO-Cr$_2$O$_3$-Sb$_2$O$_3$series, is fabricated with Sb$_2$O$_3$mol ratio(0.5~4[mol%]) and sintered at 1250[$^{\circ}C$] for 2 hours. The grain size to Sb$_2$O$_3$moi ratio was measured by fractal mathematics. The ZnO varistors that Sb$_2$O$_3$mot ratio is 1[mol%] were shown small grain size because of spinel phase. The fractal dimension were increased with increasing of Sb$_2$O$_3$mo ratios. The capacitance of ZnO varistors with increasing of Sb$_2$O$_3$additive in voltage-capacitance characteristics was decreased by small grain size.

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Crystallization of α-Fe2O3/AI2O3(0001) Thin films Studied by Synchrotron X-ray Scattering (α-Fe2O3/AI2O3(0001) 박막 결정화의 방사광 X-선 산란 연구)

  • 조태식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.8
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    • pp.708-712
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    • 2002
  • The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (>40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (>$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

Effect of EuO$_3$addition on hydrothermal stability of t-ZrO$_2$/Al$_2$O$_3$composites (t-ZrO$_2$/Al$_2$O$_3$복합체 상 안정성에 대한 Eu$_2$O$_3$첨가 효과)

  • 이득용;김대준;최성갑;이명현
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.3
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    • pp.233-238
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    • 2000
  • t-$ZrO_2/Al_2O_3$composites having a superior biocompatability and phase stability were prepared by adding 0~4 mol% of $Eu_2O_3$and sintered for 1 h at $1600^{\circ}C$ to evaluate phase stability, chromaticity and mechanical properties of the composites. No tetragonal to monoclinic phase transformation was observed for the composites containing $Eu_2O_3$after heat treatment for 20 h at $180^{\circ}C$ under 3.5 MPa water vapor pressure condition. As $Eu_2O_3$content increased, the color of the composites was changed from a slight white ivory to a light pink. The strength and the fracture toughness of the composites containing $Eu_2O_3$were above 620 MPa and 7.6 MPa.$m^{1/2}$, respectively, when $Eu_2O_3$was added up to 3 mol%.

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Electrical Properties of $Pb(Y_{1/2}Ta_{1/2})O_3-PbZrO_3-PbTiO_3$ Ceramic s as a function of $Fe_2O_3$content ($Fe_2O_3$ 첨가에 따른 $Pb(Y_{1/2}Ta_{1/2})O_3-PbZrO_3-PbTiO_3$ 세라믹스의 전기적 특성)

  • 강도원;김태열;김범진;박태곤;김명호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.297-299
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    • 1999
  • Effects of additives on the ceramic and electrical properties of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ceramics in a perovskite type structure were investigated. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of Fe$_2$O$_3$ additives in proper amounts. The composition Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ obtained the dielectric constant ($\varepsilon$$_{r}$=1,425). Also, electromechanical couping factors for planar(k$_{p}$) and piezoelectric constant(d$_{33}$) were obtained 0.50 and 294[pC/N] at the additives 0wt% Fe$_2$O$_3$ respectively. The mechanical quality facor(Q$_{m}$) of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$+Fe$_2$O$_3$(0.3 wt%) is about 510.510.510.

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