• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.575-579
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• 2012

Heteroepitaxial InP films have been grown on GaAs substrates to study the effects of the nucleation layer's surface roughness on the epitaxial layer's quality. For this, InP nucleation layers were grown at $400^{\circ}C$ with various ethyldimethylindium (EDMIn) flow rates and durations of growth, annealed at $6200^{\circ}C$ for 10 minutes and then InP epitaxial layers were grown at $550^{\circ}C$. It has been found that the nucleation layer's surface roughness is a critical factor on the epitaxial layer's quality. When a nucleation layer is grown with an EDMIn flow rate of 2.3 ${\mu}mole/min$ for 12 minutes, the surface roughness of the nucleation layer is minimum and the successively grown epitaxial layer's qualities are comparable to those of the homoepitaxial InP layers reported. The minimum full width at half maximum of InP (200) x-ray diffraction peak and that of near-band-edge peak from a 4.4 K photoluminescence are 60 arcmin and 6.33 meV, respectively.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.168-172
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• 2006

GaN nucleation layers were grown by hydride vapor phase epitaxy (HVPE) and the effect of growth temperature on the structural properties of GaN nucleation layers for nanorods was investigated by synchrotron x-ray scattering and Atomic Force Microscopy (AFM). For the samples grown at different temperatures, two-component rocking profiles of (002) GaN Bragg peaks for the GaN nucleation layers were observed with one very sharp and the other broad. It was shown that the two-component rocking profile could be qualitatively explained by surface morphology, which was in good agreement with AFM result, from which we could conclude that relatively low temperature is favorable for GaN nanorods formation.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

• Journal of Korea Foundry Society
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• v.26 no.1
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• pp.27-33
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• 2006

Phase evolutions involving nucleation stages together with diffusional growth have been examined in order to provide a guideline for determining rate limiting stages during phase evolutions. In multiphase materials systems in coatings, composites or multilayered structures, diffusion treatments often result in the development of metastable/intermediate phases at the reaction interfaces. The development of metastable phases during solid state interdiffusion demonstrates that the nucleation reaction can be one controlling factor. Also, the concentration gradient and the relative magnitudes of the component diffusivities provide a basis for a phase selection and the application of a kinetic bias strategy in the phase selection. For multicomponent alloy systems, the identification of the operative diffusion pathway is central to control phase formation. Experimental access to the nucleation and growth stage is discussed in thin film multi layers and bulk samples.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.363-367
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• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.72-73
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• 1994

• Journal of Magnetics
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• v.20 no.1
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• pp.31-39
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• 2015

Macroscopic hysteresis loops and microscopic magnetic moment distributions have been determined by a three-dimensional (3D) model for exchange-coupled Sm-Co/${\alpha}-Fe$/Sm-Co trilayers with in-plane collinear easy axes. These results are carefully compared with the popular one-dimensional (1D) micromagnetic models and recent experimental data. It is found that the results obtained from the two methods match very well, especially for the remanence and coercivity, justifying the calculations. Both nucleation and coercive fields decrease monotonically as the soft layer thickness $L^s$ increases while the largest maximum energy product (roughly 50 MGOe) occurs when the thicknesses of hard and soft layers are 5 nm and 15 nm, respectively. Moreover, the calculated angular distributions in the thickness direction for the magnetic moments are similar. Nevertheless, the calculated nucleation and pinning fields as well as the energy products by 3D OOMMF are systematically smaller than those given by the 1D model, due mainly to the stray fields at the corners of the films. These demagnetization fields help the magnetic moments at the corners to deviate from the previous saturation state and facilitate the nucleation. Such an effect enhances as $L^s$ increases. When the thicknesses of hard and soft layers are 10 nm and 20 nm, respectively, the pinning field difference is as large as 30%, while the nucleation fields have opposite signs.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.1-5
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• 2003

The effect of CeO$_2$ coating on the surface nucleation of the top-seeded melt-growth processed YBCO superconductors was studied. It was effective that the coating of Y123 compact surfaces by CeO$_2$ powder suppressed the undesirable subsidiary YBa$_2$Cu$_3$O$_{7-y}$ (Y123) nucleation during melt processing. BaCeO$_3$ was formed in the CeO$_2$-coated layers, which might cause a CuO-excessive liquid at the partial melt stage of $Y_2$BaCuO$_{5}$(Y211) plus liquid, and thus the Y123 nucleation at the YBCO compact surfaces could be suppressed during the melt growth of Y123 grain. In addition, the CeO$_2$ refined the Y211 particles near the compact / coating interface. While the levitation forces of the top surfaces with and without CeO$_2$ coating were similar to each other, the levitation force of the interior of the CeO$_2$ coated sample was higher than that of the interior of the sample without CeO$_2$ coating, which was attributed to the suppression of subsidiary Y123 nucleation at the compact walls.s.s.