• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between Zn²⁺ions from respective zinc precursors and OH^- ions from H₂O.

• Journal of Magnetics
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• v.20 no.1
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• pp.31-39
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• 2015

Macroscopic hysteresis loops and microscopic magnetic moment distributions have been determined by a three-dimensional (3D) model for exchange-coupled Sm-Co/${\alpha}-Fe$/Sm-Co trilayers with in-plane collinear easy axes. These results are carefully compared with the popular one-dimensional (1D) micromagnetic models and recent experimental data. It is found that the results obtained from the two methods match very well, especially for the remanence and coercivity, justifying the calculations. Both nucleation and coercive fields decrease monotonically as the soft layer thickness $L^s$ increases while the largest maximum energy product (roughly 50 MGOe) occurs when the thicknesses of hard and soft layers are 5 nm and 15 nm, respectively. Moreover, the calculated angular distributions in the thickness direction for the magnetic moments are similar. Nevertheless, the calculated nucleation and pinning fields as well as the energy products by 3D OOMMF are systematically smaller than those given by the 1D model, due mainly to the stray fields at the corners of the films. These demagnetization fields help the magnetic moments at the corners to deviate from the previous saturation state and facilitate the nucleation. Such an effect enhances as $L^s$ increases. When the thicknesses of hard and soft layers are 10 nm and 20 nm, respectively, the pinning field difference is as large as 30%, while the nucleation fields have opposite signs.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Tribology and Lubricants
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• v.13 no.1
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• pp.42-52
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• 1997

This paper deals with wear characteristics of ion-nitrided metal theoretically and experimentally in order to analysis of wear phenomena. Wear tests show that compound layer of ion-nitrided metal reduces wear rate when the applied wear load is mall. However, as th load becomes large, the existence of compound layer tends to increase wear rate. The residual stress at the surface of ion-nitrided metal is measured, and the internal stress distribution is calculated when the normal and tangential forces are applied to the surface of metal. Compressive residual stress is largeest at the compound layer, and decreases as the depth from the surface increases. Calculation shows that the maximum stress exists at a certain depth from the surface when normal and tangential force are applied, and that the larger the wear load is the deeper the location of maximum stress becomes. In the analysis, it is found that under small applied wear load the critical depth, where voids and cracks may be created and propagated, is located at the compound layer, as the adhesive wear, where hardness is an important factor, is created the existence of compound layer reduces the amount of wear. When the load becomes large the critical depth is located below the compound layer, and delamination, which may be explained by surface deformation, crack nucleation and propagation, is created, and the existence of compound layer increases wear rate.

• Journal of Surface Science and Engineering
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• v.48 no.2
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• pp.38-42
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• 2015

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.152-158
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• 2014

We report the effect of the fabric of the surface microstructure on the CO gas sensing properties of $SnO_2$ thin films deposited on self-assembled Au nanodots ($SnO_2$/Au) that were formed on $SiO_2/Si$ substrates. We characterized structural and morphological properties, comparing them to those of $SnO_2$ thin films deposited directly onto $SiO_2/Si$ substrates. We observed a significant enhancement of CO gas sensing properties in the $SnO_2$/Au gas sensors, specifically exhibiting a high maximum response at $200^{\circ}C$ and quite a low detection limit of 1 ppm level in dry air. In particular, the response of the $SnO_2/Au$ gas sensor was found to reach the maximum value of 32.5 at $200^{\circ}C$, which is roughly 27 times higher than the response (~1.2) of the $SnO_2$ gas sensor obtained at the same operating temperature of $200^{\circ}C$. Furthermore, the $SnO_2/Au$ gas sensors displayed very fast response and recovery behaviors. The observed enhancement in the CO gas sensing properties of the $SnO_2/Au$ sensors is mainly ascribed to the formation of a nanostructured morphology in the active $SnO_2$ layer having a high specific surface-reaction area by the insertion of a nanodot form of Au nucleation layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.5
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• pp.247-252
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• 2002

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) thin films were prepared on ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. Effects of the post-annealing and the seeding layer on crystallization, microstructures and electrical properties of thin films were investigated. Dielectric constants of films increased due to the modification of crystallization and the changing of a surface morphology by applying the post-annealing. In addition, as the application of PT seed- ing layer offered nucleation sites to PLT thin films, electrical properties of films were enhanced by the increase of crys-tallinity and grain size. The dielectric constant of the films post-heated for 60 min and with a seeding layer was 213 at 1 kHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.957-960
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• 2008

The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.767-773
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• 1988

We have proposed a new simple and easy method for the observation of OSF growth and shrinkage. This method is to observe the behavior of OSF in thedamaged region during oxidation as well as annealing process after introducing mechanical damage on the silicon surface by pressure-controllable indentor. The effect of SiO2 layer on the shrinkage of pregrown OSF generated by the proposed method has been investigated using the samples with or without SiO2 layer. From the experimental data, we suggest a model for the shrinkage of OSF, which is based on the recombinaiton mechanism between silicon interstitial and vacancy at the Si-SiO2 interface.