• Title/Summary/Keyword: Nucleation behavior

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Size-dependent strain rate sensitivity in structural steel investigated using continuous stiffness measurement nanoindentation

  • Ngoc-Vinh Nguyen;Chao Chang; Seung-Eock Kim
    • Steel and Composite Structures
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    • v.47 no.3
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    • pp.355-363
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    • 2023
  • The main purpose of this study is to characterize the size-dependent strain rate sensitivity in structural steel using the continue stiffness measurement (CSM) indentation. A series of experiments, such as CSM indentation and optical microscope examination, has been performed at the room temperature at different rate conditions. The results indicated that indentation hardness, strain rate, and flow stress showed size-dependent behavior. The dependency of indentation hardness, strain rate, and flow stress on the indentation size was attributed to the transition of the dislocation nucleation rate and the dislocation behaviors during the indentation process. Since both hardness and strain rate showed the size-dependent behavior, SRS tended to depend on the indentation depth. The results indicated that the SRS was quite high over 2.0 at the indentation depth of 240 nm and quickly dropping to 0.08, finally around 0.046 at large indents. The SRS values at large indentations strongly agree with the general range reported for several types of low-carbon steel in the literature (Chatfield and Rote 1974, Nguyen et al. 2018b, Luecke et al. 2005). The results from the present study can be used in both static and dynamic analyses of structures as well as to assess and understand the deformation mechanism and the stress-state of material underneath the indenter tip during the process of the indentation testing.

Research on construction simulation technology of civil building structure engineering based on artificial intelligence

  • Zhongkuo Zhang;Jie Ren
    • Advances in nano research
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    • v.16 no.1
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    • pp.71-79
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    • 2024
  • Nanotechnology is the latest technology developed by humanity, trying to use the molecular properties of materials found in nature to create devices that solve the problems plaguing humanity and their efficiency. Man is also trying to change the meaning of molecules to nano so that a body made up of these particles has all the properties of these particles. Nanotechnology is not a new field but a new approach in all areas. A new perspective in concrete technology has been created by the use of nanoparticles in recent years. Adding silica nanoparticles to concrete mixes improves its properties and increases its strength. However, different results and reported mechanisms explain the behavior of nanoparticles in the mixture; Therefore, it took much work to generalize the results and predict the behavior of nano concretes. This article is about the construction simulation technology of civil engineering based on artificial intelligence, which deals with the effect of nanoparticles on improving concrete properties. This was demonstrated by analyzing laboratory samples in various mixture configurations and observing how silica nanoparticles affected their microstructure with scanning electron microscopy (SEM). Based on SEM measurements, silica nanoparticles have a powerful effect because of their specific surface area. Their increase and decrease must be sought in interacting with the filling and nucleation mechanism and the pozzolanic activity. Each of these mechanisms dominates at different ages of hydration and affects the microstructure and mechanical properties of concrete.

Growth and Structural Properties of Fe Thin Films Electrodeposited on n-Si(111) (n-Si(111) 기판 위에 전기증착에 의한 Fe 박막의 성장과 구조적 특성)

  • Kim Hyun-Deok;Park Kyeong-Won;Lee Jong-Duk
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.9
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    • pp.1663-1670
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    • 2006
  • Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.

A Study on the Effect of Si Surface on Diamond Film Growth by AES (Diamond 박막 성장에 미치는 Si 표면 영향의 AES에 의한 연구)

  • Lee, Cheol-Ro;Sin, Yong-Hyeon;Im, Jae-Yeong;Jeong, Gwang-Hwa;Cheon, Byeong-Seon
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.199-208
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    • 1993
  • The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${\mu}m$ diamond paste, 6 ${\mu}m$ Al_2O_3$ powder and 12 ${\mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.

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The study for fabrication and characteristic of Li$_2$O-2SiO$_2$conduction glass system using conventional and microwave energies (마이크로파와 재래식 열원을 이용한 고체 전지용 Li$_2$O-2SiO$_2$계 전도성 유리의 제조 및 특성에 관한 연구)

  • Park, Seong-Soo;Kim, Kyoung-Tae;Kim, Byoung-Chan;Park, Jin;Park, Hee-Chan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.1
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    • pp.66-72
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    • 2000
  • The behavior of nucleation and crystallization in the $Li_2O_3-SiO_2$ glass heat-treated at different condition under the conventional and microwave processing was studied by differential thermal analysis (DTA), X-ray diffractometry (XRD), optical microscopy (OM), and electrical conductivity measurement. Nucleation temperature and temperature of maximum nucleation rate in both conventionally and microwave heat-treated samples were 460~$500^{\circ}C$ and $580^{\circ}C$, respectively. It was expected that the probability for bulk crystallization increased in microwave heat-treated sample, compared to conventionally heat-treated one. Degree of crystallization increased with increasing crystallization temperature in both conventionally and microwave heat-treated samples. However, pattern of crystallization growth under microwave processing appeared to be quite different from that under the conventional one due to its internal or volumetric heating. Electrical conductivity of conventionally and microwave heat-treated samples were 1.337~2.299, 0.281~~$0.911{\times}10^{-7}\Omega {\textrm}{cm}^{-1}$, respectively.

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Synthesis of Nanoparticles via Surface Modification for Electronic Applications

  • Lee, Burtrand I.;Lu, Song-Wei
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 2000.06a
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    • pp.35-58
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    • 2000
  • The demand for sub-micrometer or nanometer functional ceramic powders with a better suspension behavior in aqueous media in increasing. Redispersible barium titanate (BT) nanocrystals, green light emitting Mn2+ doped Zn$_2$SiO$_4$ and ZnS nanoparticle phosphors were synthesized by a hydrothermal method or chemical precipitation with surface modification. The nanoparticle redispersibility for BT was achieved by using a polymeric surfactant. X-ray diffraction(XRD) results indicated that the BT particles are of cubic phase with 80 nm in size. XRD results of zinc silicate phosphor indicate that seeds play an important role in enhancing the nucleation and crystallization of Zn$_2$SiO$_4$ crystals in a hydrothermal condition. This paper describes and discuss the methods of surface modification, and the resulting related properties for BT, zinc silicate and zinc sulfide.

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Microstructural Changes on Weld Heat Input in $60kg/mm^2$ Quenched and Tempered High Strength Steel ($60kg/mm^2$급 조질고장력강의 용접입열량에 따른 미세조직변화)

  • 김은석;정인상;박경채
    • Journal of Welding and Joining
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    • v.11 no.4
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    • pp.79-90
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    • 1993
  • Shielded metal arc welding, one-ploe and two-pole submerged arc welding were accomplished to investigate microstructure changes on phase transformation behavior in $60kg/mm^2$ quenched and tempered high strength steel. Microstructures were examined by optical micrograph and TEM. In shielded metal arc welding (oxygen 250ppm), the inclusions were small size (0.3-0.5$\mu\textrm{m}$)and small in number. In submerged arc welding (oxygen 430-529ppm), the inclusions were larger(0.7-2$\mu\textrm{m}$) than that of shielded metal arc welding and large in number. Microstructure mainly depends on number and distribution of inclusions in fusion zone of weld metal. It was noticed that a limited number of inclusions favors the formation of acicular ferrite.

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The Behavior of TiN Thin Film Growth According to Substrate Surface Conditions in PECVD Process (모재표면오건에 따른 TiN 박막의 Morphology변화)

  • 노경준;이정일
    • Korean Journal of Crystallography
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    • v.3 no.1
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    • pp.53-66
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    • 1992
  • Extensive research has been perform성 on the property-microstructure-process condition relations of thin films. The various proposed models are mainly based on physical vapor deposition processes. Especially the study on the surface condition of substrates in Zone 1 with low surface mobility has not been sufficient. In this study, therefore, we discussed the mochological changes of TiN films deposited by plusma enhanced chemical vapor deposition process with substrates of different composition and micro-rorghness, and compared it with the Structure Zone Model. We could find out that the growth rate of films increased and micro-grain size decreased with the increase in micro-roughness, but it does not improve the mechanical properties because of many imperfections like voids, micro-cracks, stacking faults, etc. This means that, in these deposition conditions, the increase in shadowing diffect is more effective than the increase in nucleation sites on the growth of films due to the increase in substrate roughness.

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KINETIC MODELING STUDY OF A VOLOXIDATION FOR THE PRODUCTION OF U3O8 POWDER FROM A UO2 PELLET

  • Jeong, Sang-Mun;Hur, Jin-Mok;Lee, Han-Soo
    • Nuclear Engineering and Technology
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    • v.41 no.8
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    • pp.1073-1078
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    • 2009
  • A kinetic model for the oxidation of a $UO_2$ pellet to $U_3O_8$ powder has been suggested by considering the mass transfer and the diffusion of oxygen molecules. The kinetic parameters were estimated by a fitting of the experimental data. The activation energies for the chemical reaction and the product layer diffusion were calculated from the kinetic model. The oxidation conversion of a $UO_2$ pellet was simulated at various operating conditions. The suggested model explains the oxidation behavior of $UO_2$ well.

The Substrate Effects on Kinetics and Mechanism of Solid-Phase Crystallization of Amorphous Silicon Thin Films

  • Song, Yoon-Ho;Kang, Seung-Youl;Cho, Kyoung-Ik;Yoo, Hyung-Joun
    • ETRI Journal
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    • v.19 no.1
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    • pp.26-35
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    • 1997
  • The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

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