• Title/Summary/Keyword: Non-thermal Plasma

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NO Removal Characteristics in $N_2$ for a Dielectric Barrier Discharge Reactor with the Variation of a Discharge Gap (유전체 장벽 방전 반응기에서 방전 간극의 변화에 따른 질소 분위기하의 NO 제거 특성)

  • 차민석;이재옥;신완호;송영훈;김석준
    • Proceedings of the Korea Air Pollution Research Association Conference
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    • 2000.11a
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    • pp.407-408
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    • 2000
  • 유전체 장벽 방전 반응기 (Dielectric Barrier Discharge (DBD) Reactor)를 이용한 비열 플라즈마(Non-thermal plasma) 공정에서 NO 제거 특성을 실험적으로 연구하였다. 질소 분위기에서 전자에 의한 NO 의 제거는 $N_2$ + e $\longrightarrow$ N + N + e 반응에 의한 질소의 전자충돌해리 (electron-impact dissociation)와 이 반응에 의하여 생성된 질소원자에 의한 NO 의 환원반응 N + NO $\longrightarrow$ $N_2$ + O 으로 설명될 수 있으며, 이로 인하여 $O_2$$H_2O$ 의 첨가에 따른 부산물(O, $O_3$, OH 등)에 의한 산화반응이 주로 일어나는 경우 (XO + NO $\longrightarrow$ X + NO$_2$) 와는 달리 NO 제거에 소모된 에너지를 평가하기에 용이한 장점이 있다(Penetrante et al., 1995). (중략)

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양극으로의 에너지 플럭스 유입을 고려한 대기압 아르곤 자유연소아크 해석

  • Lee, Won-Ho;Lee, Jong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.498-498
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    • 2012
  • 직류 아크 토치를 이용하여 열플라즈마를 발생시키는 방법은 전극의 구성에 따라 크게 비이송식(non-transferred)과 이송식(transferred)의 2가지 형태로 나눌 수 있다. 1950년대 H. Maecker 등에 의해 이론적 기초가 형성되기 시작한 이송식 아크 플라즈마 발생장치는 처리 대상물질을 전극으로 사용하여 양극에서의 에너지 전달을 직접 이용할 수 있으므로 열효율이 매우 높기 때문에 이를 이용한 고출력 토치에 관한 활발한 연구가 지속되고 있다. 본 연구에서는 대기압 아르곤 자유연소아크 방전에 의해 발생되는 열플라즈마의 열유동 특성을 수치적으로 해석하기 위하여 아크 기둥의 온도, 압력 및 속도 특성을 Navier-Stokes 방정식과 Maxwell 방정식을 연계 계산하였다. 또한 아크-전극 상호작용(arc-electrode interaction) 모델링을 통한 양극(anode)인 처리 대상물질로의 에너지 플럭스 유입을 고려하여 전극 내부의 온도분포를 계산하였다. 해석결과를 검증하기 위하여 음극과 양극 사이 플라즈마 기둥(column)의 중심축 온도는 Haddad & Farmer(1984)의 실험데이터와 비교하였고, 양극으로의 에너지 플럭스 및 온도분포 데이터는 Bini 등(2006)의 실험 및 해석데이터와 비교하여 만족스런 일치를 확인하였다.

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Removal of NOx by Pulsed Streamer discharge (펄스 스트리머 방전을 이용한 NOx 제거)

  • 고희석;박재윤;김건호
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.807-811
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    • 1997
  • In this paper we have investigated the removal characteristics of NOx by pulsed corona discharge with a multi-pointplane electrode where a magnetic field is applied in the discharge region. The efficiency of NOx removal was measured and analyzed as a function of pulse frequency gas flow rate NOx initial concentration magnetic flux density. In this result the highest removal efficiency of NOx was obtained at the following operating conditions; the frequency =400[Hz] gas flow =1[$\ell$/min] initial concentration= 400[ppm] and magnetic flux density=0.36[T].

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PEGYLATION: Novel Technology to Enhance Therapeutic Efficacy of Proteins and Peptides (PEG 접합: 단백질 및 펩타이드 치료제의 약효를 증가시키는 새로운 기술)

  • Park, Myung-Ok;Lee, Kang-Choon
    • Journal of Pharmaceutical Investigation
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    • v.30 no.2
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    • pp.73-83
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    • 2000
  • Polyethylene glycol (PEG) is a water soluble, biocompatible, non-toxic polymer and PEGylation is a well established technique for the modification of therapeutic proteins and peptides. PEG-protein drugs have been extensively studies in relation to therapies for various diseases: cancer, inflammation and others. The covalent attachment of PEG to proteins and peptides prolonged plasma half-life, reduced antigenicity and immunogenicity, increased thermal and mechanical stability, and prevented degradation by enzymes. Several chemical groups for general and site specific conjugation have been exploited to activate PEG for amino group, carboxyl group, and cysteine groups. PEGylation of many proteins and peptides have been studied to enhance their properties for the potential uses. Also, the different positional isomers in several PEG-proteins have shown the difference in vivo stability and biological indicating that the site of PEG molecule attachment is one of the important factor to develop PEG-proteins as potential therapeutic agents.

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Effect of Atmospheric Pressure Plasma Jet on Inactivation of Listeria monocytogenes, Quality, and Genotoxicity of Cooked Egg White and Yolk

  • Lee, Hyun-Jung;Song, Hyun-Pa;Jung, Hee-Soo;Choe, Won-Ho;Ham, Jun-Sang;Lee, Jun-Heon;Jo, Cheo-Run
    • Food Science of Animal Resources
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    • v.32 no.5
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    • pp.561-570
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    • 2012
  • The objective of this study was to evaluate the effects of an atmospheric pressure plasma (APP) jet on L. monocytogenes inactivation, quality characteristics, and genotoxicological safety of cooked egg white and yolk. APP treatment using He gas resulted in a 5 decimal reduction in the number of L. monocytogenes in cooked egg white, whereas that using $He+O_2$, $N_2$, and $N_2+O_2$ decreased the number further, and to undetectable levels. All treatments of cooked egg yolk resulted in undetectable levels of inoculated L. monocytogenes. There were no viable cells of total aerobic bacteria after APP treatment on day 0 while the control showed approximately 3-4 Log CFU/g. On day 7, the numbers of total aerobic bacteria had increased by approximately 3 log cycles in cooked egg white, but there were no viable cells in cooked egg yolk after 2 min of APP jet. APP treatment decreased the $L^*$-values of cooked egg white and yolk significantly on day 0. No significant sensory differences were found among the cooked egg white samples, whereas significant reductions in flavor, taste, and overall acceptability were found in cooked egg yolks treated with APP jets. SOS chromotest did not reveal the presence of genotoxic products following APP treatments of cooked egg white and yolk. Therefore, it can be concluded that APP jets can be used as a non-thermal means to enhance the safety and extend the shelf-life of cooked egg white and yolk.

Effect of Dielectrics on NOx Removal of Metal Particle-AI2O3 Barrier Reactor (금속파티클-AI2O3Barrier 반응기의 NOx 제거에 미치는 유전체 영향)

  • 박재윤;김종석;고희석;김형만;배명환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.3
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    • pp.247-252
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    • 2003
  • In this paper, we made four types of metal particle $Al_2$O$_3$ barrier reactors with and without dielectric of BaTiO$_3$ between metal particle and $Al_2$O$_3$ barrier to investigate NOx removal characteristic and the effect of dielectric on Nox removal. And Nox removal rate is measured when sludge pellets are put at down stream of plasma reactor. Nox removal rate in the reactor with $Al_2$O$_3$ barrier is much better than that in the reactor without $Al_2$O$_3$ barrier, Nox removal rate is not so good in metal particle-Al$_2$O$_3$ barrier reactor with BaTiO$_3$ between metal particle and $Al_2$O$_3$ barrier, however, Nox removal rate is about 40% in metal particle-Al$_2$O$_3$ barrier reactor with TiO$_2$. The most of NO is conversed to NO$_2$ in these kind of reactor. When sludge pellets are put at down stream of plasma reactor, Nox removal rate is greatly improved up to 90%. It indicates that sludge pellets have great effect on the NO$_2$ removal and the improvement of Nox removal rate, however, dielectric materials between metal particle and $Al_2$O$_3$ barrier have not effect. Organic materials included in sludge may react with NO$_2$ and ozone so that Nox removal rate is greatly improved.

The study of plasma source ion implantation process for ultra shallow junctions (Ulra shallow Junctions을 위한 플라즈마 이온주입 공정 연구)

  • Lee, S.W.;Jeong, J.Y.;Park, C.S.;Hwang, I.W.;Kim, J.H.;Ji, J.Y.;Choi, J.Y.;Lee, Y.J.;Han, S.H.;Kim, K.M.;Lee, W.J.;Rha, S.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.111-111
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    • 2007
  • Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

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EUV Imaging Spectroscopic Study of a CME Source Region by HINODE EIS

  • Kim, Il-Hoon;Sung, Suk-Kyung;Lee, Kyoung-Sun;Lee, Chung-Woo;Moon, Yong-Jae;Kim, Kap-Sung
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.1
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    • pp.29.2-29.2
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    • 2010
  • The Extreme ultraviolet Imaging Spectrometer (EIS) on board Hinode provide us with excellent imaging spectroscopic data with very good spatial and spectral resolutions, which can be used for detecting Doppler flows in transition region and coronal lines as well as diagnosing plasma properties such as temperature, density, and non-thermal velocity. In this study we have made an EUV-imaging spectroscopic study of the source region of a partial halo coronal mass ejection (CME) that occurred on 2007 July 9 in NOAA 10961. Dopplergrams are obtained before and after the CME eruption using 12 EIS spectral lines (Log T= 4.9~7.2). Major results are summarized as follows. First, it is noted that either red shifts disappeared or blue shifts newly appeared for all spectral lines lower than Log T =6.0. Second, there were significant intensity increases for all wavelengths. Third, there were no significant variations in non-thermal motions for all wavelengths. We found one interesting bright point that newly appeared after the CME eruption. We discuss the implication on the results in terms of the CME eruption.

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The Experimental Study on Removal of Sulfur Dioxide and Nitrogen Oxide Using a Nano-Pulse Corona Discharger at Different Temperatures (나노펄스 코로나 방전의 온도 변화에 따른 이산화황 및 일산화질소 제거에 관한 실험적 연구)

  • Han, Bang-Woo;Kim, Hak-Joon;Kim, Yong-Jin
    • Journal of Korean Society for Atmospheric Environment
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    • v.27 no.4
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    • pp.387-394
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    • 2011
  • A study on the removal of sulfur dioxide and nitrogen oxide was carried out using a non-thermal nano-pulse corona discharger at different gas temperatures. Pulse voltage with a high voltage of 50 kV, a pulse rising time of about 100 ns, a full width at half maximum of about 500 ns and a frequency of 1 kHz was applied to a wire-cylinder corona reactor. Ammonia and propylene gases were added into the corona reactor as additives with a static mixer. Ammonia addition had less effect on $SO_2$ reduction at the higher temperature because of the retardation of ammonium sulfate formation. However, propylene addition enhanced NO reduction at higher temperature due to increased gas mixture. $SO_2$ was further removed at the mixed $SO_2$ and NO gas due to increased $NO_2$ by the conversion of NO. The addition of ammonia and propylene gases was more highly dominant for the removal of sulfur dioxide compared to the sole pulse corona without the additives. However, the specific energy density per unit concentration of pulse corona as well as propylene additive was an important factor to remove NO gas. Therefore, the specific energy density per unit concentration of 0.04 Wh/($m^3{\cdot}ppm$) was necessary for the NO removal of more than 80% with the concentration ratio of 2.0 for propylene and NO. Hydrogen peroxide was another alternative additive to remove both $SO_2$ and NO in the nano-pulse corona discharger.

Self-Limiting Growth of ZnO Thin Films and Substrate-Temperature Effects on Film Properties (자기제한적 표면반응에 의한 ZnO 박막성장 및 기판온도에 따른 박막특성)

  • Lee, D.H.;Kwon, S.R.;Lee, S.K.;Noh, S.J.
    • Journal of the Korean Vacuum Society
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    • v.18 no.4
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    • pp.296-301
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    • 2009
  • An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.