• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1042-1044
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• 2003

The photoluminescence (PL) properties are studied for a new phosphor $BaZr(BO_{3})_{2}$ doped with $Eu^{3+}$ activator ion. The excitation spectrum shows strong absorption in the vacuum ultraviolet (VUV) region with an absorption band edge at 200 nm. The PL spectrum shows the strongest emission at 615 nm corresponding to the electric dipole $^{5}D_{0}\;{\rightarrow}\;^{7}F_{2}$ transition of $Eu^{3+}$, which results in a good color purity.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1028-1031
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• 2009

High quality poly-SiGe thin films were prepared on 6-inch substrates using Reactive-thermal CVD with $Si_2H_6$ and $GeF_4$ around at $500^{\circ}C$ directly. Its thickness uniformity was ~ 3% on the entire substrate area. N-channel mobility of ~30 nm thick bottom-gate TFTs exceeded 20 $cm^2$/Vs without any further crystallization.

• Journal of the Korean Chemical Society
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• v.47 no.6
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• pp.601-607
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• 2003

We studied on preparation of nanoparticles modified surface using biodegradable polymer, poly(DL-lactide-co-glycolide) (PLGA). Two kinds of PLGA nanoparticles were prepared by a spontaneous emulsification solvent diffusion (SESD) method using cetyltrimethylammonium chloride (CTAC) and tetradecyltrimethylammonium bromide (TTAB) as a cationic surfactant and polyethylene glycol-block-polypropylene glycol copolymer (Lutrol F68) as a nonionic surfactant. Model protein was coated on the surface of nanoparticles by the ionic complexation. The model protein was that influenza vaccine ($H_3N_2,\;H_1N_1$, B strain) labeled with NHS-fluorescein. The sizes of cationic nanoparticles were 140-160 nm and the surface charges were 50-60 mV. The sizes of nonionic nanoprticles were 80-90 nm and the surface charge was -10 mV. After coating vaccine on the surface of nanoparticles, the sizes of cationic nanoparticles were increased to 380-400 nm and the size of nonionic nanoparticles was not increased. The amount of coated vaccine on the cationic nanoparticles was 22.73 ${\mu}g$/mg.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1149-1151
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• 1995

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.23-26
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• 2011

New organic light-emitting diodes with structure of ITO/DNTPD/TAPC/$Bebq_2/Bebq_2$:RP-411/ET-137/LiF/Al using the selective doping of 5% RP-411 in a single $Bebq_2$ host in the two wavelength(green, red) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of $Bebq_2$, three kinds of devices with different thicknesses of 30${\AA}$, 40${\AA}$ and 50${\AA}$ in the doped emitter of $Bebq_2$:RP-411 were fabricated. The electroluminescent spectra showed two peak emissions at the same wavelengths of 511 nm and 622 nm for the fabricated devices. When the device with a 30${\AA}$-thick doped emitter is referred as "D-1", the device with a 40${\AA}$-thick doped emitter is referred as "D-2" and the device with a 50${\AA}$-thick doped emitter is referred as "D-3", the relative intensity of 622 nm to 511 nm at two wavelength peaks was higher in the D-2 and the D-3 than in the D-1. The devices of D-1, D-2 and D-3 showed the color coordinates of (0.43, 0.46), (0.46, 0.44) and (0.48, 0.43) on the CIE chart, respectively.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.857-860
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• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of Radiation Protection and Research
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• v.43 no.4
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• pp.160-169
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• 2018

Background: This study aims to develop an integrated optical system that can simultaneously or selectively measure the signals obtained from radioluminescence (RL), thermoluminescence (TL), and optically stimulated luminescence (OSL), which are luminescence phenomena of materials stimulated by radioactivity, heat, and light, respectively. The luminescence mechanism of various materials could be investigated using the glow curves of the luminescence materials. Materials and Methods: RL/TL/OSL integrated measuring system was equipped with a X-ray tube (50 kV, $200{\mu}A$) as an ionizing radiation source to irradiate the sample. The sample substrate was used as a heating source and was also designed to optically stimulate the sample material using various light sources, such as high luminous blue light emitting diode (LED) or laser. The system measured the luminescence intensity versus the amount of irradiation/stimulation on the sample for the purpose of measuring RL, TL and OSL sequentially or by selectively combining them. Optical filters were combined to minimize the interference of the stimulation light in the OSL signal. A long-pass filter (420 nm) was used for 470 nm LED, an ultraviolet-pass filter (260-390 nm) was used for detecting the luminescence of the sample by PM tube. Results and Discussion: The reliability of the system was evaluated using the RL/OSL characteristics of $Al_2O_3:C$ and the RL/TL characteristics of LiF:Mg,Cu,Si, which were used as dosimetry materials. The RL/OSL characteristics of $Al_2O_3:C$ showed relatively linear dose-response characteristics. The glow curve of LiF:Mg,Cu,Si also showed typical RL/OSL characteristics. Conclusion: The reliability of the proposed system was verified by sequentially measuring the RL characteristics of radiation as well as the TL and OSL characteristics by concurrent thermal and optical stimulations. In this study, we developed an integrated measurement system that measures the glow curves of RL/TL/OSL using universal USB-DAQs and the control program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.168-168
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• 2010

DCM derivatives were newly synthesized. The OLEDs with a DCM-A as an emitting layer was fabricated and analyzed their opto-electrical properties. The structures of OLEDs were I) ITO/DCM-A/Al, II) ITO/-NPD/DCM-A/LiF/Al, and III) ITO/-NPD/DCM-A/Alq3/LiF/Al. The EL peak of the DCM-A shows the red emission in the range of 700 nm. The structure I) shows that 1050 nW/cm2 at 510 mA/cm2. The structure II) shows that takes the most excellent luminance about 39,000 nW/cm2 at 290 mA/cm2. The EL structure ill shows luminance about 13,000 nW/cm2 at 6 mA/cm2.

• Journal of the Korean Solar Energy Society
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• v.22 no.4
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• pp.44-50
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• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• Tribology and Lubricants
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• v.35 no.2
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• pp.106-113
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• 2019

We investigated the application of tetrahedral amorphous carbon (ta-C) coatings to fabricate a glass lens manufactured using a glass molding process (GMP). In this work, ta-C coatings with different thickness (50, 100, 150 and 200 nm) were deposited on a tungsten carbide (WC-Co) mold using the X-bend filter of a filtered cathode vacuum arc. The effects of thickness on mechanical and tribological properties of the coating were studied. These ta-C coatings were characterized by atomic force microscopy, scanning electron microscopy, nano-indentation measurements, Raman spectrometry, Rockwell-C tests, scratch tests and ball on disc tribometer tests. The nano-indentation measurements showed that hardness increased with an increase in coating thickness. In addition, the G-peak position in the Raman spectra analysis was right shifted from 1520 to $1586cm^{-1}$, indicating that the $sp^3$ content increased with increasing thickness of ta-C coatings. The scratch test showed that, compared to other coatings, the 100-nm-thick ta-C coating displayed excellent adhesion strength without delamination. The friction test was carried out in a nitrogen environment using a ball-on-disk tribometer. The 100-nm-thick ta-C coating showed a low friction coefficient of 0.078. When this coating was applied to a GMP, the life time, i.e., shot counts, dramatically increased up to 2,500 counts, in comparison with Ir-Re coating.