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Influences of the Eu Concentration and the Milling Time on Photoluminescence Properties of Y2O3-H3BO3:Eu3+ Powders Prepared by Mechanical Alloying

  • Gong, Hyun-Sic;Kim, Hyun-Goo
    • Journal of Powder Materials
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    • v.23 no.2
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    • pp.108-111
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    • 2016
  • $Y_2O_3-H_3BO_3:Eu^{3+}$ powders are synthesized using a mechanical alloying method, and their photoluminescence (PL) properties are investigated through luminescence spectrophotometry. For samples milled for 300 min, some $Y_2O_3$ peaks ([222], [440], and [622]) and amorphous formations are observed. The 300-min-milled mixture annealed at $800^{\circ}C$ for 1 h with Eu = 8 mol% has the strongest PL intensity at every temperature increase of $100^{\circ}C$ (increasing from 700 to $1200^{\circ}C$ in $100^{\circ}C$ increments). PL peaks of the powder mixture, as excited by a xenon discharge lamp (20 kW) at 240 nm, are detected at approximately 592 nm (orange light, $^5D_o{\rightarrow}^7F_1$), 613 nm, 628 nm (red light, $^5D_o{\rightarrow}^7F_2$), and 650 nm. The PL intensity of powder mixtures milled for 120 min is generally lower than that of powder mixtures milled for 300 min under the same conditions. PL peaks due to $YBO_3$ and $Y_2O_3$ are observed for 300-min-milled $Y_2O_3-H_3BO_3$ with Eu = 8 mol% after annealing at $800^{\circ}C$ for 1 h.

Structural and Luminescent Properties of Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) Phosphors for White Light Emitting Devices (백색광 소자 응용을 위한 Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) 형광체의 구조 및 발광 특성)

  • Park, Giwon;Jung, Jaeyong;Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.53 no.4
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    • pp.131-137
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    • 2020
  • A series of Dy3+, Sm3+, and Dy3+/Sm3+ doped Gd2WO6 phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd2WO6 crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy3+-doped Gd2WO6 phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm3+-doped Gd2WO6 phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the 6G5/26H5/2, 6G5/26H9/2, and 6G5/26H11/2 transitions of Sm3+, respectively. The PL emission spectra of the Dy3+- and Sm3+-codoped Gd2WO6 phosphors showed the blue and yellow emission lines originating from the 4F9/26H15/2 and 4F9/24H13/2 transitions of Dy3+ and reddish-orange and red emission bands due to the 4G5/26H7/2 and 4G5/26H9/2 transitions of Sm3+. As the concentration of Sm3+ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy3+ ions gradually decreased, while those of the three emission bands due to the Sm3+ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd2WO6:5 mol% Dy3+, 1 mol% Sm3+ phosphors were (0.406, 0.407), which was located in the warm white light region.

Three White Organic Light-emitting Diodes with Blue-green Fluorescent and Red Phosphorescent Dyes

  • Galbadrakha, Ragchaa;Bang, Hwan-Seok;Baek, Heume-Il;Lee, Chang-Hee
    • Journal of Information Display
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    • v.9 no.3
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    • pp.23-27
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    • 2008
  • This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

Simulation on Reflectance from Solar Cell Surface Using Double Layered Anti-Reflective Coating (Double layer 반사방지막 구조에 대한 태양전지 표면 반사율 simulation)

  • Ra, Chang-Ho;Yang, Cheng;Yoo, Won-Jong
    • Journal of the Korean institute of surface engineering
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    • v.43 no.2
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    • pp.97-104
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    • 2010
  • In this paper, we conducted MATLAB simulation using the reflectance formula and the Planck's black body radiation principle, for the purpose of identifying the opimum material and thickness of anti-reflective coating from double layered structures. We found that the optimum condition was obtained when refractive index of upper layer is 1.44 and that of lower layer is 2.29. As materials close to these refractive indices, $MgF_2$ as the upper layer and $HfO_2$, ZnS, $TiO_2$ as the lower layer were suggested. The best result in an average reflectance of 2.759% was obtained from a double layered structure of $MgF_2$ 94 nm/ZnS 55 nm.

Characterization of (Y,Gd) $BO_3$:Eu Phosphors Prepared by Urea Hydrolysis Method

  • Park, Jung-Min;Kim, Chang-Hae;Jung, Ha-Kyun;Park, Hee-Dong;Park, Yoon-Chang
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.792-794
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    • 2002
  • Uniform cylinder-shaped precursors for (Y,Gd)$BO_3$:Eu phosphors were prepared by urea hydrolysis reaction. After heating the precursors at lower temperature than general synthetic methods, the phosphor powders were well dispersed and held their original shapes. Their emissions under vacuum-ultraviolet (VUV) excitation appeared with the peaks at 593nm due to magnetic dipole transition from $^5D_0$ to $^7F_1$, 612nm and 627nm due to electric dipole transition from $^5D_0$ to $^7F_2$

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Genetic Diversify and Population Structure of Two Korean Pond Frog Species, Rana nigromaculata and R. plancyi (Anura, Ranidae), with a Survey of Temporal Genetic Variation in R. nigromaculata

  • Suh-Yung Yang;Jong-Bum Kim;Mi-Sook Min;Jae-Hwa Suh
    • Animal cells and systems
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    • v.3 no.3
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    • pp.275-283
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    • 1999
  • Korean R. plancyi occupies a restricted area in western South Korea and shows a relatively low level of genic variability (%P=15.2, Ho=0.052, He=0.048). In contrast, R. nigromaculata is broadly distributed in South Korea. The observed low level of variability of R. nigromaculata (%P=14.3, Ho=0.042, He=0.043) is probably due to its recent colonization. Populations of R. nigromaculata exhibited considerable genetic differentiation (F$_{sT}$=0.149) and low level of gene flow (Nm=1.427) among populations, compared to those of R. Plancyi (F$_{sTF$_{sT}$}$=0.096, Nm=2.354), which occupies a restricted area. The observed levels of gene flow among populations of R. nigromaculata (Nm=1.427) over a broad geographic range is relatively higher than other amphibian species. The high level of gene flow is probably the result of the high dispersal abilities of R. nigromaculata. A survey of temporal genic variation of R. nigromaculata showed that there was no significant change on the overall average genetic diversity from 1978 (average He=0.044) to 1997 (average He=0.040). Wright's F-statistics also indicated no significant genetic differentiation from 1978 (F$_{sT}$=0.118) to 1997 (F$_{sT}$=0.108). This suggests that the environmental change appears to have had little influence on the genetic composition of R. nigromaculata in the study areas during the past 20 years. The low level of temporal variation might be due to the result of high dispersal abilities and wide migration range of this species.

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Synthesis and Characterization of Novel Acid Amplifiers with a Low Absorbance at 193 nm (193 nm에서 낮은 흡수도를 갖는 새로운 산 증식제의 합성 및 특성연구)

  • 소진호;정용석;최상준;정연태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.806-811
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    • 2004
  • 1-Hydroxy-4-(2-naphthalenesulfonyloxy) cyclohexane(1), 1,4-di-(2-naphthalenesulfonyloxy) cyclohexane(2), 1-hydroxy-4-(2-thiophenesulfonyloxy) cyclohexane(3), 1,4-di-(2-thiophenesulfonyloxy) cyclohexane(4) were synthesized and evaluated for their performance as novel acid amplifiers for 193 nm photoresists. These acid amplifiers(1-4) showed reasonable thermal stability at the usual resist-processing temperature, 9$0^{\circ}C$-12$0^{\circ}C$. And estimated by the sensitivity curve, (1)-(4) enhanced the sensitivity of poly(tert-butyl methacrylate) film by 1.2-1.4 times, compared to poly(tert-butyl methacrylate) film whithout acid amplifiers, in the presence of a photoacid generator.

Ultra Thin Film Encapsulation of Organic Light Emitting Diode on a Plastic Substrate

  • Park, Sang-Hee;Oh, Ji-Young;Hwang, Chi-Sun;Lee, Jeong-Ik;Yang, Yong-Suk;Chu, Hye-Yong;Kang, Kwang-Yong
    • ETRI Journal
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    • v.27 no.5
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    • pp.545-550
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    • 2005
  • We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

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The Three-wavelength PR3+:YLF Laser at 604 nm 607 nm and 640 nm with Fabry-Perot Etalon

  • Jin, Long;Jin, Yu-Shi;Dong, Yuan;Li, Qing-Song;Yu, Yong-Ji;Li, Shu-Tao;Jin, Guang-Yong
    • Current Optics and Photonics
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    • v.2 no.5
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    • pp.448-452
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    • 2018
  • A three-wavelength $Pr^{3+}:YLF$ laser at 604 nm, 607 nm and 640 nm simultaneously output by Fabry-Perot (F-P) etalon has been obtained. A 444 nm blue laser diode is used for pumping the $Pr^{3+}:YLF$ crystal, and a 0.1 mm F-P etalon is inserted in the resonator to select wavelength. The theoretical model of three-wavelength $Pr^{3+}:YLF$ laser is established, by adjusting the tilt angle of the etalon, the transmittances of the different wavelengths can be controlled, and the threshold values can be made to equalize by controlling the loss among different wavelengths. In the experiment, when the tilt angle of etalon is $9^{\circ}$ and the optimized length of resonator is 48 mm, the total output power of 25 mW at the three-wavelength is achieved at incident pump power of 7.5 W.