• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.471-479
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• 1992

AlN powder was synthesized by carbothermal reduction and nitridation using Al2(SO4)3.18H2O as the starting material. The synthesized AlN powder was fine but contained oxygen. Therefore carbonaceous material (carbon black or phenol novolac) was added teogether with the sintering aids (CaO, CaF2, CaCl2, Y2O3 and YF3). It was found that pressureless sintering at 1700~180$0^{\circ}C$ after deoxidation at 150$0^{\circ}C$ suppressed the formation of second phase (27R) and reduced the contents of lattice oxygen within AlN ceramics.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.269-278
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• 1991

Fine AlN powder was synthesized by carbothermal reduction and nitridation of alumimun hydroxide prepared from Al-isopropoxide. AlN ceramics with Y2O3 and CaO were prepared by hot-pressing under the pressure of 30 MPa at 180$0^{\circ}C$ for 1 h in N2 atmosphere. Grain boundary behavior and purification mechanism of AlN lattice were examined by heat treatment of AlN ceramics at 185$0^{\circ}C$ for 1-6 h in N2 atmosphere. AlN ceramics without sintering additives showed poor sinterability. However, Y2O3-doped and CaO-doped AlN ceramics were fully densified nearly to theoretical density. As the heat treatment time increased, c-axis lattice parameter increased. This is attributed to the removal of Al2O3 in AlN lattice. This purification effect of AlN attice depended upon the quantity of secondary oxide phase in the inintial stage of heat treatment and the heat treatment time.

• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.11-18
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• 1984

$eta$-Sialon synthesis was investigated via the simultaneous reduction and nitridation of Hadong Pink Kaolin using the graphite as a reducing agent at 135$0^{\circ}C$ under 80% $N_2-20%H_2$ atmosphere. When Hadong Pink Kaolin-graphite-silicon nitride seed(molar ratio ; $SiO_2:C:Si_3N_4$=1;3.5:0.05) mixture was heated at 135$0^{\circ}C$ for as long as 20h in 80%$N_2-20%H_2$ atmosphere a homogeneous $eta$-Sialon$(Si_{3.5}Al_{2.5}O_{2.5}N_{2.5})$ was mainly formed together with a small amount of $\alpha$-$Si_3N_4$.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.916-924
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• 1990

The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

• Journal of the Korean Ceramic Society
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• v.22 no.5
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• pp.35-42
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• 1985

$eta$-Sialon powders were prepared by reduction-nitridation from mixture of Wando pyrophyllite and graphite as a reducing agent at 135$0^{\circ}C$ in 80% $N_2$-20% $H_2$ atmosphere. As the reaction products $Si_2ON_2$, $\beta$-$Si_3N_4$ a--$Si_3N_4$ and $\beta$-SiC were observed. Additive agents of MgO, CaO, $Y_2O_3$ were used for promoting the reduction and nitridiation aeaction. The present study was conducted to investigate the effects of silica-carbon ratio ($SiO_2$/C=weight ratio), raction time gas flow rate pellet size and powder packing on synthesis of $\beta$-Sialon from Wando pyropyllite.

• Journal of Information Display
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• v.13 no.3
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• pp.107-111
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• 2012

An almost pure phase of $Ba_3Si_6O_{12}N_2$ doped with $Eu^{2+}$ was successfully synthesized through the ammonia nitridation of an oxide precursor prepared through an aqueous-solution method, using propylene- glycol-modified silane. The emission peak intensity of the obtained $Ba_3Si_6O_{12}N_2:Eu^{2+}$ was -2.2 times higher than that of the sample prepared through a solid-state reaction method.

• Journal of Powder Materials
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• v.18 no.3
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• pp.238-243
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• 2011

Al/AlN composites were synthesized by mechanical alloying using process control agents(PCAs). Three different PCAs which contain N element, were examined to see the effectiveness of ball-milling and the nitridation during sintering. Among examined PCAs, $C_8H_6N_4O_5$ was the most effective to facilitate ball-milling and to form nitrides during a subsequent sintering. By a proper control of ball-milling and sintering, we could obtained surface-hardened Al-based composites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.736-742
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• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.