• Title/Summary/Keyword: Nickel in-diffusion

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The Metallization of Diamond Grits

  • Sung, James-C.;Hu, Shao-Chung;Chang, Yen-Shuo
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1134-1135
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    • 2006
  • A revolutionary "Active Braze Coated Diamond" (ABCD) has been developed for bonding diamond grits firmly in the metal matrix. The molten braze is wetted and reacted with diamond to form strong chemical bond at the interface so that the diamond does not become knocked out of tools. The ABC is a nickel alloy that can form metallurgical diffusion bondswith the metal matrix. In essence, ABCD turns diamond into a metal grain so that the diamond tools can be made by conventional powder metallurgical process without being concerned about the poor bonding between matrix metal powder and the diamond as before.

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Formation of Diamond/Mo/Ni Multi-Layer on Steel Substrate (강 표면의 다이아몬드/몰리브데늄/니켈 복합층의 생성)

  • Lee, H.J.;J.I. Choe;Park, Y.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2002.05a
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    • pp.37-37
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    • 2002
  • Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

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Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate (알루미늄 기판 상의 Ni layer가 a-Si의 AIC(Aluminum Induced Crystallization)에 미치는 영향)

  • Yun, Won-Tae;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.2
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    • pp.65-72
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    • 2012
  • Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at $520^{\circ}C$ was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.

Ni/Cu Metallization for High Efficiency Silicon Solar Cells (Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1352-1355
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    • 2004
  • We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

Extra-fine Ni Powder for Diamond Tool Binder Applications

  • Stephenson, Thomas F.;Korotkin, Maria;Metcalfe, Shawn
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.883-884
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    • 2006
  • A new extra-fine grade Ni powder (XF Ni) has demonstrated increased sintering activity in Co-Fe-Ni binders for diamond tool applications. XF Ni has the advantage of significantly lower cost than XF Co. Up to 30% of XF Co was substituted with XF Ni while maintaining comparable apparent hardness and transverse rupture strength to pure Co binders. Ni substantially increased the diffusion of Fe. Diamond tool producers can take advantage of the improved sintering properties of XF Ni powder to substantially lower material costs.

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Construction of a Plant Chloroplast Transformation Vector to Produce the Antimicrobial Peptide Stomoxyn (대장균에서 항균 펩타이드 stomoxyn을 생산하기 위한 형질전환 벡터 제작)

  • Jin Gyu Go;Hyeon Ho Gil;Soon Young Kim
    • Journal of Life Science
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    • v.34 no.7
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    • pp.493-499
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    • 2024
  • Antimicrobial peptides are antimicrobial substances inherent in animals and plants, with strong antibacterial activity even in small amounts and with various other functions such as antiviral and antioxidant actions. Plants can be grown with just water and sunlight, allowing for their mass production at low costs. However, transforming a chloroplast into one that produces antimicrobial peptides, rather than growing plants, increases the amount of protein expression and minimizes contamination of the ecosystem because gene transfer by pollen does not occur. In that context, using transgenic plant chloroplasts to produce recombinant proteins increases protein degradation and reduces the solubility of proteins. To solve this problem, we fused SUMO, a fusion protein, with a recombinant protein. We also used a 6xHis tag to purify the fusion protein. The antimicrobial peptide stomoxyn is an antibacterial substance found in stable flies. Stomoxyn has an α-helix structure and is amphiphilic, which allows it to dissolve bacterial cell membranes. In this study, we constructed a transformation vector to express stomoxyn in both plant chloroplasts and Escherichia coli and used this vector to confirm the expression of stomoxyn in E. coli. The expression of the protein was then confirmed in E. coli using a transformation vector. The expressed stomoxyn was purified by nickel column and SUMOase treatment, and its antibacterial activity was confirmed using an agar diffusion assay. The EGFP gene was used to ensure that the transformed vector was inserted into the chloroplast.

Expression, Purification, Crystallization and Preliminary X-Ray Crystallographic Analysis of CnrX from Cupriavidus metallidurans CH34

  • Kim, Kook-Han;Jung, Eun-Jung;Im, Ha-Na;Lelie, Daniel Van Der;Kim, Eunice Eun-Kyeong
    • Journal of Microbiology and Biotechnology
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    • v.18 no.1
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    • pp.43-47
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    • 2008
  • The nickel and cobalt resistance of Cupriavidus metallidurans CH34 is mediated by the CnrCBA efflux pump encoded by the cnrYHXCBAT metal resistance determinant. The products of the three genes cnrYXH transcriptionally regulate expression of cnr. CnrY and CnrX are membrane-bound proteins, probably functioning as anti-sigma factors, whereas CnrH is a cnr-specific extracytoplasmic functions (ECF) sigma factor. The periplasmic domain of CnrX (residues 29-148) was cloned as a N-terminal His-tagged protein, expressed in Escherichia coli, and purified using affinity chromatography and gel filtration. The molecular mass was estimated to be about 13.6kDa by size exclusion chromatography, corresponding to a monomer. The tetragonal bipyramid crystals were obtained by mixing an equal volume of protein in 50mM Tris-HCl, pH 7.5, 1% glycerol, 100mM NaCl, 1mM DTT, and the reservoir solution of 15% w/v PEG 2000, 100mM lithium chloride at 277K in 2-4 days using hanging drop vapor diffusion. The protein concentration was 24mg/ml. The crystal that diffracted to $2.42{\AA}$ resolution belongs to space group $P4_1\;or\;P4_3$ with unit cell parameters of $a=b=32.14{\AA},\;c=195.31{\AA},\;{\alpha}={\beta}={\gamma}=90^{\circ}$, with one molecule of CnrX in the asymmetric unit.

Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density (저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합)

  • Lee, Chae-Rin;Lee, Jin-Hyeon;Park, Gi-Mun;Yu, Bong-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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Electrochemical Hydrogenation Behavior of Surface-Treated Mg-based Alloys for Hydrogen Storage of Fuel Cell (연료전지의 수소저장용 마그네슘계 합금의 표면제어에 의한 전기화학적 수소화 거동 연구)

  • Kim, Ho-Sung;Lee, Jong-Ho;Boo, Seong-Jae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.7
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    • pp.46-52
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    • 2006
  • The effects of surface treatment on the hydrogen storage properties of a $Mg_2Ni$ alloy particle were investigated by the microvoltammetric technique, in which a carbon-filament microelectrode was manipulated to make electrical contact with the particle in a KOH aqueous solution. It was found that the hydrogen storage properties of $Mg_2Ni$ at room temperature were improved by the surface treatment with a nickel plating solution. The sodium salts(sodium phosphate and sodium dihydrogen citrate) contained in the nickel plating solution made the alloy form an amorphous-like state, resulting in an improved hydrogen charge/discharge capacity at room temperature as high as about 150[mAh/g] from the original value of 17[mAh/g]. Potential-step experiment was carried out to determine the apparent chemical diffusion coefficient of hydrogen atom($D_{app}$) in the alloy. Since the alloy particle we used here was a dense, conductive sphere, the spherical diffusion model was employed for data analysis. $D_{app}$ was found to vary the order between $10^{-8}{\sim}10^{-9}[cm^2/s]$ over the course of hydrogenation and dehydrogenation process.

Catalytic Hydrogenation of Triglyceride in a Semi-batch Reactor (Semi-batch 반응기에서의 트리글리세라이드 접촉 수소화 반응)

  • An, Jae-Yong;Lee, Choul-Ho;Jeon, Jong-Ki
    • Clean Technology
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    • v.25 no.2
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    • pp.101-106
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    • 2019
  • The aim of this study is to investigate the feasibility of an Ni-SA catalyst, which was prepared from nickel, kieselguhr, and alumina, for the hydrogenation of triglyceride in a bench-scale reactor. Ni-SA powders were prepared by precipitating nickel precursors on a silica and alumina support. The powder was reduced in a hydrogen flow, mixed with a saturated palm oil, and then cooled to prepare an Ni-SA catalyst tablet. The sizes of NiO crystals of a commercial Pricat catalyst and the Ni-SA catalyst prepared in this study were $35{\AA}$ and $38{\AA}$, respectively. The pore volume and pore size of the Ni-SA catalyst was much larger than the pore volume and pore size of the Pricat catalyst. In addition, the average particle size of the Ni-SA catalyst was much smaller than that of the Pricat catalyst. The triglyceride hydrogenation reaction was carried out in a semi-batch reactor using catalysts impregnated with oil and molded into tablets. It was found that the Ni-SA catalyst was superior to the commercial Pricat catalyst in triglyceride hydrogenation, which could be ascribed to the raw material and the products being less influenced by the diffusion resistance in the pores of the Ni-SA catalyst. The Ni-SA catalyst prepared in this study has the potential to replace the Pricat catalyst as a catalyst for use in the commercial process for hydrogenation of triglyceride.