• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.249-249
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• 2011

투명전도성산화물(transparent conducting oxides, TCOs) 박막은 전기 전도성과 광투과성이 우수하여 유기발광다이오드(organic light-emitting diode, OLED), 태양전지(solar cell), 발광다이오드(LED) 등의 광전자 소자에 널리 응용되고 있다. 특히 LED에서 p-GaN층에서 전류가 층안에서 충분하게 확산되지 않기 때문에, TCO는 균일하게 전류를 흘려보내기 위해서 전류확산층(current spreading layer)으로 사용된다. 그 중 널리 쓰이는 산화인듐주석(indium tin oxide, ITO)은 고가의 indium가격과 인체에 유해한 독성 등이 문제점으로 지적되고 있다. 따라서 indium의 함량을 저감하거나 함유하지 않은 새로운 조성의 친환경적 대체 TCO 개발에 대한 연구가 많이 진행되고 있다. 이러한 반도체 재료 중 하나인 AZO (Al-doped zinc oxide, Al2O3 : 2wt.%)는 3.3 eV의 넓은 에너지 밴드갭을 가지며, 가시광선 및 근적외선 파장영역에서 높은 투과율을 나타낸다. 따라서 본 연구에서는 GaN기반 LED 응용을 위한 전류확산층으로 ITO 대신 AZO의 특성을 연구하였다. 박막 증착율이 높고, 제작과정의 조정이 용이한 RF magnetron 스퍼터를 이용하여 glass기판 위에 AZO, Ni/AZO, NiOx/AZO를 증착하였다. 이어서 $N_2$ 분위기에서 다양한 온도 조건에서 열처리(rapid thermal annealing, RTA)하여 전기적 광학적 특성에 대하여 비교 분석하였다.

• Current Photovoltaic Research
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• v.12 no.1
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• pp.1-5
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• 2024

Perovskite solar cells have exhibited a remarkable increase in efficiency from an initial 3.8% to 26.1%, marking a significant advancement. However, challenges persist in the commercialization of perovskite solar cells due to their low stability with respect to humidity, light exposure, and temperature. Moreover, the instability of the organic charge transport layer underscores the need for exploring inorganic alternatives. In the manufacturing process of the perovskite solar cells' oxide charge transport layer, ultraviolet-ozone (UVO) treatment is commonly applied to enhance the wettability of the perovskite solution. The UVO treatment on metal oxides has proven effective in suppressing surface oxygen vacancies and removing surface organic contaminants. This study focused on the characterization of nickel oxide as the hole transport material in perovskite solar cells, specifically investigating the impact of UVO treatment on film properties. Through this analysis, changes induced by the UVO treatment were observed, and consequent alterations in the device characteristics were identified.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.255-255
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• 2016

Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$와 $85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.325-334
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• 2018

Lactose is a reducing disaccharide consisting of two different monosaccharides such as galactose and glucose. The hydrogenation of lactose to lactitol is a formidable challenge because it is a complex process and several side products are formed. In this work, we synthesized Ru-Ni bimetallic nanohybrids as efficient catalysts for selective lactose hydrogenation to give selective lactitol. Ru-Ni bimetallic nanohybrids with $Ru-NiO_x$ (x = 1, 5, and 10 wt%) are prepared by impregnating Ru and Ni salts precursors with $TiO_2$ used as support material. Ru-Ni bimetallic nanohybrids (represented as $5Ru-5NiO/TiO_2$) catalyst is found to exhibit the remarkably high selectivity of lactitol (99.4%) and turnover frequency i.e. ($374h^{-1}$). In contrast, monometallic $Ru/TiO_2$ catalyst shows poor performance with ($TOF=251h^{-1}$). The detailed characterizations confirmed a strong interaction between Ru and NiO species, demonstrating a synergistic effect on the improvement on lactitol selectivity. The impregnation-reduction method for the preparation of bimetallic $Ru-NiO/TiO_2$ catalyst promoted Ru nanoparticles dispersed on NiO and intensified the interaction between Ru and NiO species. $Ru-NiO/TiO_2$ efficiently catalyzed the hydrogenation of lactose to lactitol with high yield/selectivity at almost complete conversion of lactose at $120^{\circ}C$ and 55 bar of hydrogen ($H_2$) pressure. Moreover, $Ru-NiO/TiO_2$ catalyst could also be easily recovered and reused up to four runs without notable change in original activity.

• Progress in Superconductivity
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• v.12 no.2
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• pp.110-113
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• 2011

We have grown a Nb/Gd bilayer on a$SiO_2$/Si substrate by using a DC magnetron sputtering system, which was fabricated in situ with silicon stencil masks. In order to investigate proximity effect of the Nb/Gd bilayer, we used a planar tunnel junction with an AlOx tunnel barrier by oxidizing the Al ground electrode at the bottom. A $Co_{60}Fe_{40}$ backing of Al was deposited so as to reduce the superconductivity of the Al, ensuring a normal counterelectrode. With a 50-nm-thick Nb layer, we have measured dI/dV (dynamic conductance) by varying the thickness of Gd, which can reveal the density of states (DOS) of the Nb/Gd bilayer as a function of the Gd thickness resulting from the proximity effect of a superconductor/ferromagnet bilayer (S/F). The SF proximity effect in Nb/Gd will be discussed in comparison to our previous results of the CoFe/Nb, Ni/Nb and CuNi/Nb proximity effect; Gd is expected to show different effects since Gd has f-electrons, while CoFe, Ni, and CuNi have only d-electrons. Our studies will focus on the triplet correlation in a superconducting pair.

• Journal of the Korean Chemical Society
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• v.12 no.2
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• pp.38-38
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• 1968

The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\; to\; 800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\; mmHg\; to\; 10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e.${\sigma}σ = K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

• Journal of the Korean Chemical Society
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• v.12 no.2
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• pp.39-43
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• 1968

The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\;to\;800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\;mmHg\;to\;10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e. ${\sigma}=K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.91-96
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• 2003

Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.