• Title/Summary/Keyword: NiO - CuO

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Effect of Thermomechanical Treatment on the Phase Transformation and Superelasticity in Ti-Ni-Cu Shape Memory Alloy (Ti-Ni-Cu 형상기억합금의 상변태 및 초탄성에 미치는 가공열처리의 영향)

  • Lee, O.Y.;Park, Y.K.;Chun, B.S.
    • Journal of the Korean Society for Heat Treatment
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    • v.7 no.4
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    • pp.253-261
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    • 1994
  • Transformation behavior and superelastic behavior of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, X-ray diffraction, tensile test and transmission electron microscopy. Two types of heat treatment are given to the specimens: i) Solutions treatment. ii) thermo-mechanical treatment. The transformation sequence in solution treated Ti-Ni-Cu Alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\rightleftarrows}B19^{\prime}$ and it proceeds in two stages by addition of 10at.%Cu, i. e, $B2{\rightleftarrows}B19{\rightleftarrows}B19^{\prime}$. Also, it has been found that Ti-30Ni-20Cu alloy transformed in one stage : $B2{\rightleftarrows}B19$. The thermo-mechanically treated Ti-47Ni-3Cu alloy transformed in two stages: B2${\rightleftarrows}$rhomboheral phase${\rightleftarrows}B19^{\prime}$, while transformation sequence in Ti-45Ni-5Cu and Ti-40Ni-10Cu alloy transformed as same as solution treated specimens. The critical stress for inducing slip deformation in solution treated and thermo-mechanically treated Ti-40Ni-10Cu alloy is about 90MPa and 320Mpa respectively.

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Calculation of the Dipole Moment for Octahedral [Co(III)-$O_3N_3$], Tetrahedral [M(II)-$O_2N_2$] and Square Planner [M(II)-$O_2N_2$] Type Complexes [M(II) = Ni(II) or Cu(II)] (정팔면체 [Co(III)-$O_3N_3$], 정사면체 [M(II)-$O_2N_2$] 및 정사각형 [M(II)-$O_2N_2$] 형태 착물의 쌍극자모멘트의 계산 [M(II) = Ni(II) 또는 Cu(II)])

  • Ahn Sang Woon
    • Journal of the Korean Chemical Society
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    • v.22 no.5
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    • pp.295-303
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    • 1978
  • The dipole moments for octahedral [Co(III)-$O_3N_3$], tetrahedral [M(II)-$O_2N_2$] and square planar [M(II)-$O_2N_2$] types complexes are calculated by the expansion method for spherical harmonics using the valence basis sets for the central metal ion and the single basis set orbital ($2p_z$) for ligands. The calculated dipole moments for these complexes are in agreement with the experimental values.

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Finite Element Analysis of Combustion Reaction on Iron and Metal Oxides Interface (Fe-금속 산화물 계면에서 연소반응의 유한 요소해석)

  • Gu, Mun-Seon;Choe, Yong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.118.2-118.2
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    • 2017
  • Combustion behavior of Fe, CuO, NiO, ZnO and $Fe_2O_3$ powder mixture was carried out by finite element method (FEM) to understand a reaction at iron and metal oxide interface. The FEM was done by using ANSYS Fluent 17.0. Initial and boundary conditions are 1 atmosphere, room temperature, 0.1MPa of oxygen partial pressure, $T_{S1}=1127^{\circ}C$, $T_{S2}=327^{\circ}C$ for a cylindrical shape specimen with dia. $35{\times}80$ [mm]. The maximum combustion temperature is $1537^{\circ}C$ for the condition of conduction, convection and radiation. The combustion temperature and rate are about $847^{\circ}C$ and 3.9mm/sec, respectively. The combustion wave is enough to make ternary ferrite phase like $CuNiZnFe_2O_3$.

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Exchange Biasing and Magnetoresistance in $\alpha-Fe_2O_3 /NiFe/Cu/NiFe$Spin-valves ($\alpha-Fe_2O_3 /NiFe/Cu/NiFe$ 스핀밸브 박막에서의 자기저항 특성에 대한 연구)

  • 김종기;주호완;이기암;황도근;이상석
    • Journal of the Korean Magnetics Society
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    • v.10 no.1
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    • pp.37-41
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    • 2000
  • We investigated the magnetoresistance effect and the exchange coupling of antiferromagnetic Fe$_2$O$_3$ spin-valve film. The X-ray diffractions of the spin-valve films having a different thickness of a $\alpha$-Fe$_2$O$_3$ were measured. The exchange coupling field (H$_{ex}$) between Fe$_2$O$_3$ and pinned NiFe layer was increased from 13.5 Oe to 84.5 Oe, as the thickness of Fe$_2$O$_3$ increased from 400 $\AA$ to 800 $\AA$. The surface roughness of $\alpha$-Fe$_2$O$_3$spin-valves increased with the increase of $\alpha$-Fe$_2$O$_3$thickness. Therefore, the increase of H$_{ex}$ will be due to the increase of the interface roughness. The MR ratios as a function of Fe$_2$O$_3$ thickness was not changed. And H$_{ex}$ increased by the increment of magnetostatic coupling between Fe$_2$O$_3$ and NiFe (pinned-layer) due to the increment of interface roughness. H$_{ex}$ depends on the surface roughness, but the magnetoresistance ratio doesn't doesn't.

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Annealing effect in NiO/Co/Cu/Co spin valve with NOL (NOL 삽입에 따른 NiO/Co/Cu/Co 스핀밸브 박막의 annealing effect)

  • 최상대;주호완;이경민;이기암
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.162-163
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    • 2002
  • 거대자기저항(GMR) 분야에서 높은 GMR 값을 보유하는 것은 주요 관심사이다. Egelhoff와 연구자들은 산소를 이용하여 스핀밸브 박막의 표면을 산화시켜 유도 전자들의 Specular 산란 효과를 보고하였으며, 강자성층과 산화층 사이의 계면에서 specular 반사가 이루어져 GMR의 향상을 가져온 것으로 보고 있다[1,2]. 또한 annealing에 따른 자기적 특성의 향상과에 관한 논문도 보고되어진 바 있다[4]. (중략)

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The Electrical Conductivity of O-amino Benzoic Acid Hydrazide and Its Complexes with $Co^{2+}$, $Ni^{2+}$ & $Cu^{2+}$

  • Abd El Wahed M. G.;Hassen A. M.;Hammad H. A.;El-Desoky M. M.
    • Bulletin of the Korean Chemical Society
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    • v.13 no.2
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    • pp.113-116
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    • 1992
  • The electrical conductivity of the complexes of $Co^{2+}$, $Ni^{2+}$ and $Cu^{2+}$ with o-aminobenzoic acid hydrazide was measured between 300 and 500 K. It was observed that the conductivity is dependent upon both the cations and anions of the reacted salts. The prepared complexes exhibit typical semiconducting behaviour.

Potentiometric Study of Transition Metal Ions Complexes of Hexadentate($N_4$, $O_2$) Ligands (질소-산소계 여섯 자리 리간드들의 전이금속이온 착물에 대한 전위차법 연구)

  • Kim, Sun-Deuk;Kim, Jun-Kwang;Lee, Woo-Sik
    • Journal of the Korean Chemical Society
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    • v.44 no.6
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    • pp.518-525
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    • 2000
  • The open-chain hexadentate N$_4$, O$_2$ ligands 1,13-bis(2-hydroxybenzyl)-2,5,9,12-tetraazatridecane-tetrahydrochloride (BSATD${\cdot}$4HCl) and 1,14-bis (2-hydroxybenzyl)-2,6,9,12-tetraazatetradecane-tetrahydrochloride (BSATED${\cdot}$ 4HCl) have been synthesized as their tetrahydrochloride salt and characterized by EA, IR, NMR and Mass. Their proton dissociation constants(log$K^{n}_{H}$) and stability constants(log$K_{ML}$) for Cu(II), Ni(II), Co(II), and Zn(II) ions were determined in aqueous solution by potentiometry and compared with those of analogous N$_4$, O$_2$ ligands contain ethylenic spacers or propylenic spacers, which make six-membered chelate rings between the aliphatic nitrogen atoms. Synthesis and characterization of [Cu(BSATD)]ClO$_4$ and [Cu(BSATED)](ClO$_4$)$_2$ complexes are described.

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Fabrication and Electrical Property Analysis of [(Ni0.3Mn0.7)1-xCux]3O4 Thin Films for Microbolometer Applications (마이크로볼로미터용 [(Ni0.3Mn0.7)1-xCux]3O4 박막의 제작 및 전기적 특성 분석)

  • Choi, Yong Ho;Jeong, Young Hun;Yun, Ji Sun;Paik, Jong Hoo;Hong, Youn Woo;Cho, Jeong Ho
    • Journal of Sensor Science and Technology
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    • v.28 no.1
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    • pp.41-46
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    • 2019
  • In order to develop novel thermal imaging materials for microbolometer applications, $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ ($0.18{\leq}x{\leq}0.26$) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ films annealed at $380^{\circ}C$ for five hours. The resistivity (${\rho}$) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the $Mn^{3+}/Mn^{4+}$ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between $Mn^{3+}$ and $Mn^{4+}$ cations discussed in the proposed study. The effects of $Cu^+$ and $Cu^{2+}$ cations on the hopping mechanism is also discussed. Obtained results indicate that $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ thin films with low temperature annealing and superior electrical properties (${\rho}{\leq}54.83{\Omega}{\cdot}cm$, temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.