• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• Nano
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• v.13 no.11
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• pp.1850136.1-1850136.12
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• 2018

Three-dimensional (3D) mixed phases NiSe nanoparticles growing on the nickel foam were synthesized via a simple one-step hydrothermal method. A series of experiments were carried out to control the morphology by adjusting the amount of selenium in the synthetic reaction. Meanwhile, the as-prepared novel column-acicular structure NiSe exist three advantages including ideal electrical conductivity, high specific capacity and high cycling stability. It delivered a high capacitance of $10.8F\;cm^{-2}$ at a current density- of $5mA\;cm^{-2}$. An electrochemical capacitor device operating at 1.6 V was then constructed using NiSe/NF and activated carbon (AC) as positive and negative electrodes. Moreover, the device showed high energy density of $31W\;h\;kg^{-1}$ at a power density of $0.81kW\;kg^{-1}$, as well as good cycling stability (77% retention after 1500 cycles).

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.195-201
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• 2024

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

• Journal of Magnetics
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• v.19 no.2
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• pp.126-129
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• 2014

We report the crystallographic and magnetic properties of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ by means of X-ray diffractometer (XRD), a superconducting quantum interference device (SQUID) magnetometer, and a M$\ddot{o}$ssbauer spectroscopy. In particular, $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was studied by M$\ddot{o}$ssbauer analysis for evidence of spin reorientation. The chalcogenide material $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was fabricated by a direct reaction method. XRD analysis confirmed that $Ni_{0.3}Fe_{0.7}Ga_2S_4$ has a 2-dimension (2-D) triangular lattice structure, with space group P-3m1. The M$\ddot{o}$ssbauer spectra of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ at spectra at various temperatures from 4.2 to 300 K showed that the spectrum at 4.2 K has a severely distorted 8-line shape, as spin liquid. Electric quadrupole splitting, $E_Q$ has anomalous two-points of temperature dependence of $E_Q$ curve as freezing temperature, $T_f=11K$, and N$\acute{e}$el temperature, $T_N=26K$. This suggests that there appears to be a slowly-fluctuating "spin gel" state between $T_f$ and $T_N$, caused by non-paramagnetic spin state below $T_N$. This comes from charge re-distribution due to spin-orientation above $T_f$, and $T_N$, due to the changing $E_Q$ at various temperatures. Isomer shift value ($0.7mm/s{\leq}{\delta}{\leq}0.9mm/s$) shows that the charge states are ferrous ($Fe^{2+}$), for all temperature range. The Debye temperature for the octahedral site was found to be ${\Theta}_D=260K$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.141-145
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• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.273-275
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• 2003

본 실험은 고출력 반도체 레이저의 p-side-down 마운팅용 솔더로서 AuSn 합금 솔더(80wt%:20wt%)의 적합성에 대해 연구하였다. $1{\mu}m$이하의 균일도로 폴리싱 된 Cu heat sink의 표면에 두께 $1{\mu}m$의 Ni로 코팅을 한다음, AuSn 다층박막은 e-beam 증착기로 AuSn 합금 솔더는 열증착기로 각각 증착하였다. 열처리는 산화 방지를 위해 $N_2$ 분위기에서 행하였으며, 동일한 압력으로 마운팅을 하였다. 표면의 거칠기와 형상은 AFM(Atomic Force Microscope)과 SEM(Scanning Electron Microscopy)으로 그리고 Au와 Sn의 성분비는 AES(Auger Electron Spectroscopy) 로 비교하였다. 또한 CW(연속발진)을 통한 L-I(Light-Current)측정을 통해 본딩상태를 비교하였다.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2577-2582
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• 2013

A novel stick-shaped portable sensing device featuring a microhole array interface between the polyvinylchloride-2-nitrophenyloctylether (PVC-NPOE) gel and water phase was developed for in-situ sensing of perchlorate ions in real water samples. Perchlorate sensitive sensing responses were obtained based on measuring the current changes with respect to the assisted transfer reaction of perchlorate ions by a perchlorate selective ligand namely, bis(dibenzoylmethanato)Ni(II) (Ni(DBM)2) across the polarized microhole array interface. Cyclic voltammetry was used to characterize the assisted transfer reaction of perchlorate ions by the $Ni(DBM)_2$ ligand when using the portable sensing device. The current response for the transfer of perchlorate anions by $Ni(DBM)_2$ across the micro-water/gel interface linearly increased as a function of the perchlorate ion concentration. The technique of differential pulse stripping voltammetry was also utilized to improve the sensitivity of the perchlorate anion detection down to 10 ppb. This was acquired by preconcentrating perchlorate anions in the gel layer by means of holding the ion transfer potential at 0 mV (vs. Ag/AgCl) for 30 s followed by stripping the complexed perchlorate ion with the ligand. The effect of various potential interfering anions on the perchlorate sensor was also investigated and showed an excellent selectivity over $Br^-$, $NO_2{^-}$, $NO_3{^-}$, $CO{_3}^{2^-}$, $CH_3COO^-$ and $SO{_4}^{2^-}$ ions. As a final demonstration, some regional water samples from the Sincheon river in Daegu city were analyzed and the data was verified with that of ion chromatography (IC) analysis from one of the Korean-certified water quality evaluation centers.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.356-359
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• 2007

Continuing improvements in integrated circuit chip density and functionality have mostly contributed toward a very large-scale integrated circuit(VLSI) and display device. In order to test (pass or fail) all of the high integrated semiconductor chip and display device, fine pitch probes are used. Fine pitch probes are manufactured by electroforming process of a Ni alloy in an electrolytic bath. In this paper, we expect that the electric field in bath with the Finite Element Method and applying the FEM result. So, we can obtained the probes that have high aspect ratio of 10 : 1