• 한국표면공학회지
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• 제44권6호
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• pp.250-254
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• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• Nuclear Engineering and Technology
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• 제51권8호
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• 폴리머
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• 제27권1호
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• pp.52-60
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• 2003

본 연구에서는 탄소섬유 강화 에폭시 수지 복합재료의 충격 특성 향상을 위해 탄소섬유표면에 전해 및 무전해 니켈도금처리를 하였으며, 이때 각각의 니켈도금법에 따른 충격 특성을 비교 고찰하였다. 도금된 탄소섬유의 표면 특성은 XRD, SEM, 그리고 접촉각 측정을 통해 관찰하였고, 탄소섬유 강화 복합재료의 충격 특성은 Izod형의 충격시험기를 이용하여 분석하였다. 실험결과, 무전해 니켈도금층에는 전해도금층과는 달리 Ni-P 합금이 포함된 것이 XRD를 통하여 확인되었으며, 전해 니켈도금된 탄소섬유가 무전해 니켈도금된 것보다 표면자유에너지가 큰 것이 접촉각 측정을 통해 관찰되었다. 한편, 무전해 니켈도금된 탄소섬유 강화 에폭시 수지 복합재료는 충격강도가 크게 증가하였으나, 전해 니켈도금된 복합재료의 경우는 충격강도가 증가하지 않았다. 이러한 결과는 각각의 도금법에 따른 젖음성의 차이가 탄소섬유 강화 복합재료의 연성을 변화시켜 충격강도 증가에 주요하게 작용되었기 때문으로 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.277-282
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• 2017

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Membrane and Water Treatment
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• 제13권5호
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• pp.227-233
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• 2022

The objective of the study, to develop adsorbent based purifier for removal of radiological and nuclear contaminants from contaminated water. In this regard, 3-aminopropyl silica functionalized with ethylenediamine tetraacetic acid (APS-EDTA) adsorbent prepared and characterized by Fourier Transform Infrared Spectroscopy (FT-IR), Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Prepared APS-EDTA used for adsorptive studies of Cs(I), Co(II), Sr(II), Ni(II) and Cd(II) from contaminated water. The effect on adsorption of various parameters viz. contact time, initial concentration of metal ions and pH were also analyzed. The batch method has been employed using metal ions in solution from 1000-10000 ㎍/L, contact time 5-60 min., pH 4-10 and material quantities 50-200 mg at room temperature. The obtained adsorption data were used for drawing Freundlich and Langmuir isotherms model and both models were found suitable for explaining the metal ions adsorption on APS-EDTA. The adsorption data were followed pseudo second order reaction kinetics. The maximum adsorption capacity obtained 1.3037-1.4974 mg/g for above said metal ions. The results show that APS-EDTA have great potential to remove Cd(II), Co(II), Cs(I), Ni(II) and Sr(II) from aqueous solutions through chemisorption and physio-sorption.

• 한국표면공학회지
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• 제27권2호
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• pp.109-117
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• 1994

Effect of ultrasonic agitation on the contact properties was studied in Ni electroless plating and Pd activation. P-type Si bare wafers were used as substrate and DMAB was used as reducing agent due to its good electrical properties, solderability and compatibility to substrate. In activation, high density Pd nuclei of small size were formed during ultra-sonic agitation compared to that of no stirring. In electroless plating, the plating rate was enhanced by 30∼90% by using ultrasonic agitation. In elecrtoless plating, inhibitor is the most effective additives in ultrasonic agitation. In this experi-ment, thiourea was used as inhibitor. The less the amount of the inhibitor, the more ultrasonic agitation efficiency. It is confirmed by SEM that Ni-B films formed by ultrasonic were coarser, less porous, and denser than those of no stirring. In ultrasonic agitation, boron content of the films was more than those of no stirring. In this case, the more DMAB concentration, the higher the temperature, the less pH, the more boron content. Resistivity of the films formed by ultrasonic agitation was higher than that of no strirring. As the content of boron was increased, the resistivity of the films was increased exponentially.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.387-392
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• 2017

A high-performing all-transparent photodetector was created by configuring a $MoO_x$/NiO/ZnO/ITO structure on a glass substrate. The ITO bottom layer was applied as a back contact. To achieve the transparent p/n junction, p-type NiO was coated on the n-type ZnO layer. Reactive sputtering was used to spontaneously form the ZnO or NiO layer. In order to improve the transparent photodetector performance, the functional $MoO_x$ window layer was used. Optically, the $MoO_x$ window provided a refractive index layer (n=1.39) lower than that of NiO (n=2), increasing the absorption of the incident light wavelengths (${\lambda}s$). Moreover, the $MoO_x$ window can provide a lower sheet resistance to improve the carrier collection for the photoresponses. The $MoO_x$/NiO/ZnO/ITO device showed significantly better photoresponses of 877.05 (at ${\lambda}$=460nm), 87.30 (${\lambda}$=520 nm), and 30.38 (${\lambda}$=620 nm), compared to 197.28 (${\lambda}$=460 nm), 51.74 (${\lambda}$=520 nm) and 25.30 (${\lambda}$=620 nm) of the NiO/ZnO/ITO device. We demonstrated the high-performing transparent photodetector by using the multifunctional $MoO_x$ window layer.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2000년도 춘계학술대회논문집
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• pp.1589-1595
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• 2000

레이저 텍스쳐와 미케니칼 텍스쳐 컴퓨터 하드디스크의 마찰과 마코 매카니즘이 Contact Start/Stop test 실행후의 특성들에 대해 연구되었다. 다양한 분석적이고 기계적인 테스트 기술들이 이용되었다. 형상, 조도, 화학적 조성, 기계적 성질, CSS 로부터 기인된 코팅의 마찰특성들에 대해 그 변화들을 조사하였다. 즉, AFM(Atomic Force Microscopy), Nano-Indentation, Nano-Scratch, TOF-SIMS(Time of Flight Secondary Ion Mass Spectroscopy), AES(Auger Electronic Spectroscopy)등이 이 연구에 적용되었다. 레이저 텍스쳐 범프의 표면조도와 미케니칼 텍스쳐 지역의 표면조도는 각각 대략적으로 4nm 와 7nm 감소되었다. 탄성계수와 경도값은 CSS test후에 증가하였고 가장 바깥쪽의 코팅층의 변형강화가 생겨났다. 자성층과 Ni-P 층 사이에 점착성의 문제가 확인되었다. TOF-SIMS 분석은 C 와 $C_2F_5$의 세기에 있어서 감소를 드러냈고 이것은 코팅 표면에 윤활제 요소의 마모를 확실시 할수 있는 결과로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.103-104
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• 1998

GaN is a ppromising materials fot applications in the blue/ultraviolet (UV) light emitting diodes (LEDs)[1] and laser diodes (LDs) [2] High quality ohmic contacts are very critical to these applications since the qualities of ohmic contact system pplay an impportant roles in the high efficient device opperations. For the n-GaN there have been many repports about ohmic contacts and the sppecific contact resistance were as low as from 10-8$\Omega$cm2 However for the ohmic contacts on pp-GaN much fewer study were repported and the sppecific contact resistivity was much lower than of n-GaN. In this ppapper we repport a new Ni/ppt/Au metallization scheme and discuss the mechanism of ohmic formation