• Title/Summary/Keyword: Ni-P Contact

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Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al Ohmic Contact의 전기적 특성 (Electrical Characteristics of Ni/Ti/Al Ohmic Contacts to Al-implanted p-type 4H-SiC)

  • 주성재;송재열;강인호;방욱;김상철;김남균
    • 한국전기전자재료학회논문지
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    • 제21권11호
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    • pp.968-972
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    • 2008
  • Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

PTFE 및 W 첨가가 Ni-P 도금의 내마모 특성에 미치는 영향 (Effects of PTFE and W Addition on the Anti-Wear Properties of Ni-P Coatings)

  • 김명식;홍진원;배규식
    • 반도체디스플레이기술학회지
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    • 제6권2호
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    • pp.25-28
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    • 2007
  • Electroless Ni-P coating is widely used for chemical, electronic, and semiconductor equipment parts because of its corrosion resistance. The incorporation of chemically-inert PTFE particles into the Ni-P films improves properties such as, non-stick, anti-adhesive and better corrosion resistance. However, soft PTFE particles degrade the hardness, wear and abrasion resistance. In this study, effects of PTFE and W addition to the Ni-P-coatings were compared by the XRD, SEM, sheet resistance, contact angle, and microhardness measurements. The change in sheet resistance was negligible, but contact angle was doubled by the addition of PTFE and W. The microhardness was lower for Ni-P-PTFE, but higher for Ni-P-PTFE-W coatings, compared to that of Ni-P coatings.

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낮은 접촉저항을 갖는 Ni/Si/Ni n형 4H-SiC의 오옴성 접합 (Low Resistivity Ohmic Ni/Si/Ni Contacts to N-Type 4H-SiC)

  • 김창교;양성준;조남인;유홍진
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권10호
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    • pp.495-499
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    • 2004
  • Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

Terbium 중간층 적용을 통한 Ni Germanide/P-type Ge의 비접촉저항 감소 연구 (A Study on Specific Contact Resistance Reduction of Ni Germanide/P-type Ge Using Terbium Interlayer)

  • 신건호;이맹;이정찬;송형섭;김소영;이가원;오정우;이희덕
    • 한국전기전자재료학회논문지
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    • 제31권1호
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    • pp.6-10
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    • 2018
  • Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al ohmic contact의 특성 (Characteristics of Ni/Ti/Al ohmic contact on Al-implanted 4H-SiC)

  • 주성재;송재열;강인호;방욱;김상철;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.208-209
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    • 2008
  • Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

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마찰부식 방지를 위한 Ni-P-PTFE 코팅의 적용 (Application of Ni-P-PTFE Coatings for Preventing Fretting Corrosion)

  • 홍진원;이근우;배규식
    • 한국재료학회지
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    • 제16권7호
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    • pp.430-434
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    • 2006
  • Au/Ni coatings are widely used in the electrical interconnect system, such as connectors, sockets and wire crimps. But due to repeated mechanical contacts, fretting corrosion occurs and causes a rapid increase in resistance. As an attempt to resolve these problem, application of Ni-P-PTFE to replace Ni undercoats was proposed, for which basic materials properties of Ni-P-PTFE coatings for preventing fretting corrosion was examined in this study. The Ni-P-PTFE coatings were formed by electroless Ni plating and PTFE coating followed by the heat-treatment. PTFE particles were found to be uniformly distributed in the Ni-P matrix. The Ni-P-PTFE coatings showed the excellent anti-adherent property with the contact angle of $104.3^{\circ}$, microhardness of 144.3 Hv comparable to that of Ni-P, and electric conductivity equivalent to that of Ni-P.

AI 이온 주입된 p-type 4H-SiC에 형성된 Ni/AI 오믹접촉의 전기 전도 특성 (Conduction Properties of NitAI Ohmic Contacts to AI-implanted p-type 4H-SiC)

  • 주성재;송재열;강인호;방욱;김상철;김남균;이용재
    • 한국전기전자재료학회논문지
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    • 제22권9호
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    • pp.717-723
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    • 2009
  • Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

Ni-P합금 첨가한 W-Cu접점의 전기접점특성과 미세조직 (Electrical contact property and microstructure of Ni-P alloy added W-Cu contact materials)

  • 김태형;배광욱;이재성
    • E2M - 전기 전자와 첨단 소재
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    • 제3권4호
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    • pp.325-331
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    • 1990
  • 본 연구는 텅스텐 소결에 저온 활성제로 작용하는 Ni-P 공정합금을 미량첨가하여 제조공정의 간단화를 통한 새로운 W-Cu계 전기접점제조를 목표로 하였다. 이를 위해 1회 용침공정을 통해 제조한 W(Ni-P)-Cu 합금에 대한 전기접점특성을 조사하여 접점의 미세구조 관점에서 논의하였다. Ni-P 합금첨가한 접점은 기존의 순수 W-Cu 합금에 비해 낮은 접촉저항 및 낮은 아크소모를 나타내는 우수한 접점성능을 보여주었다. 이것은 Ni-P합금이 Cu용침이 개시되기전 짧은 승온단계에서 분말간의 강한 결합과 Cu용침에 유리한 기공통로를 갖는 W 분말 골격체의 형성을 유도하기 때문인 것으로 판단된다.

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Highly Transparent Indium Oxide Doped ZnO Spreading Layer for GaN Based Light Emitting Diodes

  • Lim, Jae-Hong;Park, Seong-Ju
    • 한국재료학회지
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    • 제19권8호
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    • pp.443-446
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    • 2009
  • This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

4점굽힘시험법을 이용한 함몰전극형 Si 태양전지의 무전해 Ni-P 전극 계면 접착력 평가 (Interfacial Adhesion Energy of Ni-P Electroless-plating Contact for Buried Contact Silicon Solar Cell using 4-point Bending Test System)

  • 김정규;이은경;김미성;임재홍;이규환;박영배
    • 마이크로전자및패키징학회지
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    • 제19권1호
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    • pp.55-60
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    • 2012
  • 고효율, 저가격의 태양전지를 위해 습식공정 중 하나인 Ni-P 무전해 도금을 이용한 실리콘 태양전지 웨이퍼를 열처리에 따른 4점굽힘시험을 통해 정량적인 계면 접착에너지를 평가하였다. 실험 결과 실리콘 태양전지 웨이퍼와 Ni-P 박막 사이의 계면접착에너지는 $14.83{\pm}0.76J/m^2$이며, 후속 열처리에 따른 실리콘 태양전지 웨이퍼와 Ni-P 무전해 도금은 $300^{\circ}C$ 처리 시 $12.33{\pm}1.16J/m^2$, $600^{\circ}C$ 처리 시 $10.83{\pm}0.42J/m^2$로써 전반적으로 높은 계면접착에너지를 가지나 열처리 온도가 증가할수록 계면접착에너지가 서서히 감소하였다. 4점굽힘시험 후 박리된 파면의 미세구조를 관찰 및 분석하여 내부의 파괴경로를 확인하였으며, X-선 광전자 분광법을 통하여 표면화학 결합상태를 분석한 결과 열처리 시 Ni-O와 Si-O 형태의 결합이 존재하여 약한 계면을 형성하기 때문인 것으로 판단된다.