• 센서학회지
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• 제18권5호
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• pp.343-348
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• 2009

$NiO{\cdot}(Co_{0.25}Mn_{0.75})_2O_3$(Mn-Ni-Co) and $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thick films were screen printed on Pt patterned alumina substrate to investigate the effects of sintering temperature on humidity and temperature sensing properties of ceramic sensors. A raise in sintering temperature increased resistance and B constant of the Mn-Ni-Co temperature sensor. This may have derived from the synergic effects of the reduction in charge carriers caused by the substitution of Co for Mn as well as the formation of microcracks from the difference in thermal expansion coefficients. Dependence of resistance on humidity of the Mn-Ni-Co temperature sensor, however, was not found. BST films sintered at temperatures in the range of $1100^{\circ}C$ to $1150^{\circ}C$ showed excellent humidity sensing properties. The BST humidity sensor was faster in its response than the Mn-Ni-Co temperature sensor. The humidity sensor, however, proved to be unstable under various temperatures, suggesting a need for a temperature stabilizing device. In contrast, the Mn-Ni-Co temperature sensor was stable under humid conditions.

• 한국재료학회지
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• 제21권1호
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• pp.1-7
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• 2011

Methods of producing hydrogen include steam reforming, electrochemical decomposition of water, and the SI process. Among these methods, the Sulfur iodine process is one of the most promising processes for hydrogen production. The thermochemical sulfur-iodine (SI) process uses heat from a high-temperature-gas nuclear reactor to produce $H_2$ gas; this process is known for its production of clean energy as it does not emit $CO_2$ from water. But the SI-process takes place in an extremely corrosive environment for the materials. To endure SI environments, the materials for the SI environment will have to have strong corrosion resistance. This work studies the corrosion resistances of the Fe-Si, Ni-Ti and Ni Alloys, which are tested in SI-process environments. Among the SI-process environments, the conditions of boiling sulfuric acid and decomposed sulfuric acid are selected in this study. Before testing in boiling sulfuric acid environments, the specimens of Fe-4.5Si, Fe-6Si, Ni-4.5Si, Ni-Ti-Si-Nb and Ni-Ti-Si-Nb-B are previously given heat treatment at $1000^{\circ}C$ for 48 hrs. The reason for this heat treatment is that those specimens have a passive film on the surface. The specimens are immersed for 3~14 days in 98wt% boiling sulfuric acid. Corrosion rates are measured by using the weight change after immersion. The corrosion rates of the Fe-6Si and Ni-Ti-Si-Nb-B are found to decrease as the time passes. The corrosion rates of Fe-6si and Ni-Ti-Si-Nb-B are measured at 0.056 mm/yr and 0.16 mm/yr, respectively. Hastelloy-X, Alloy 617, Alloy 800H and Haynes 230 are tested in the decomposed sulfuric acid for one day. Alloy 800H was found to show the best corrosion resistance among the materials. The corrosion rate of Alloy 800H is measured at -0.35 mm/yr. In these results, the corrosion resistance of materials depends on the stability of the oxide film formed on the surface. After testing in boiling sulfuric acid and in decomposed sulfuric acid environments, the surfaces and compositions of specimens are analyzed by SEM and EDX.

• Applied Microscopy
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• 제48권4호
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• pp.128-129
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• 2018

Soft ferromagnetic materials are utilized for various electromagnetic devices such as magnetic recording heads and magnetic shielding. In situ observation of magnetic microstructures and domain wall motions are prerequisite for understanding and improving their magnetic properties. In this work, by the Fresnel (out-of-focus) method of Lorentz microscopy, we observe the domain wall motions of polycrystalline Ni/Ti thin film layers triggered by single-shot laser pulse. Random motions of domain walls were visualized at every single pulse.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• 한국전기전자재료학회논문지
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• 제32권6호
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• pp.437-443
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• 2019

All-solid-state thin-film lithium-ion batteries are important in the development of next-generation energy storage devices with high energy density. However, thin-film batteries have many challenges in their manufacturing procedure. This is because there are many factors, such as substrate selection, to consider when producing the thin film multilayer structure. In this study, we compare the fabrication and performance of all-solid-state thin-film lithium-ion batteries with a $LiNi_{0.5}Mn_{1.5}O_4$ cathode/LiPON solid electrolyte/$Li_4Ti_5O_{12}$ anode structure using stainless steel and Si substrates with different surface roughness. We demonstrate that the smoother the surface of the substrate, the thinner the thickness of the all-solid-state thin-film lithium-ion battery that can be made, and as a result, the corresponding electrochemical characteristics can be improved.

• 한국재료학회지
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• 제23권4호
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• pp.211-214
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• 2013

The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for $CH_4$ and $CH_3CH_2CH_3$ gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with $NH_4OH$. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to $CH_4$ gas and $CH_3CH_2CH_3$ gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.310-313
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• 2000

In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.230-234
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• 2009

It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

• 한국자기학회지
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• 제12권4호
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• pp.143-148
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• 2002

일축이방성을 부여한 NiO/NiFe 박막을 제작하고 이들의 강한 교환결합력과 약한 교환결합력의 분포에 대하여 조사하였다. 제작된 시편들의 교환결합력의 크기는 VSM 측정과 이방성자기저항측정을 통하여 확인하였으며, 회귀분석법을 통하여 두 교환결합력의 상호관계를 조사하였다. NiO(60nm)/NiFe(10nm)시편의 경우 전체 교환결합력 중에서 차지하는 약한 교환결합력의 크기는 외부인가자장의 크기에 관계없이 일정한 비율($\alpha$=0.2~0.4)을 나타내었고 이는 약한 교환결합을 하는 영역이 일정하게 존재함을 보여준다. 교환결합력의 크기가 서로 다른 시편의 경우는 교환결합력의 크기가 작을수록 전체 교환결합력 중에서 차지하는 약한 교환결합력의 크기가 컸으며, 교환결합력의 크기가 증가할수록 그 비율이 감소하였다. 이는 약한 교환결합을 하는 영역이 일정하게 존재한다고 가정할 경우 전체의 평균 교환결합력의 크기가 감소함에 따라 그 비율이 증가한 것으로 해석할 수 있다. 따라서 NiO/NiFe 박막에서 강한 교환결합을 하는 영역과 약한 교환결합을 하는 영역이 일정하게 존재함을 알 수 있다.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.