• Journal of Welding and Joining
• /
• v.19 no.1
• /
• pp.95-103
• /
• 2001

The properties of the detonation sprayed cermet coating are investigated through the mechanical, corrosion and erosion test. The test results are also compared with the properties of the substrate materials, STS 329J1, dual phase stainless steel and the plasma sprayed cermet coatings. The two kinds of carbide cermet power, WC+NiCr, Cr$_3$C$_2$+NiCr were used in this experiment. The experimental results showed that the anti-corrosive and anti-erosive properties of the detonation sprayed cermet coatings are superior to the plasma sprayed cermet coatings. The WC+NiCr cermet coating appears to be more effective than Cr$_3$C$_2$+NiCr cermet coating in abrasive erosion environment, whereas the Cr$_3$C$_2$+NiCr cermet coatings are more effective in cavitation erosion environment.

• Korean Journal of Materials Research
• /
• v.20 no.2
• /
• pp.90-96
• /
• 2010

The recirculating electrochemical flow reactor developed at UCLA has been employed to fabricate nanostructured GMR multilayers. For comparison, Ni/Cu multilayers have been electrodeposited from a single bath, from dual baths and from the recirculating electrochemical flow reactor. For a magnetic field of 1.5 kOe, higher GMR (Max. -5%) Ni/Cu multilayers with low electrical resistivity (< $10\;{\mu}{\Omega}{\cdot}cm$) were achieved by the electrochemical flow reactor system than by the dual bath (Max. GMR = -4.2% and < $20\;{\mu}{\Omega}{\cdot}cm$) or the single bath (Max. GMR = -2.1% and < $90\;{\mu}{\Omega}{\cdot}cm$) techniques. Higher GMR effects have been obtained by producing smoother, contiguous layers at lower current densities and by the elimination of oxide film formation by conducting deposition under an inert gas environment. Our preliminary GMR measurements of Ni/Cu multilayers from the electrochemical flow reactor obtained at low magnetic field of 0.15 T, which may approach or exceed the highest reported results (-7% GMR) at magnetic fields > 5 kOe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.9
• /
• pp.751-756
• /
• 2001

Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator system. In order to find the find the optimum growth condition, initially two different types of gas mixtures such as C$_2$H$_2$-NH$_3$ and C$_2$H$_2$-NH$_3$-Ar were systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{\circ}C$ under 0.4 torr. The diameter of the grown CNTs was 40∼200nm. The diameter of the CNTs increases with increasing the Ni particles size. TEM images clearly demonstrated synthesized nanotubes to be multiwalled.

• Proceedings of the IEEK Conference
• /
• 2007.07a
• /
• pp.441-442
• /
• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• Korean Journal of Chemical Engineering
• /
• v.35 no.12
• /
• pp.2474-2479
• /
• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.1
• /
• pp.39-47
• /
• 2007

It is investigated how KOH and Rthylenediamine(EDA) treatment conditions on Polyimide film surface affect the interfacial fracture energy between electroless plated Ni and Polyimide film by $180^{\circ}$ peel test. Estimated values of interfacial fracture energy were 24.5 g/mm and 33.3 g/mm for the KOH treatment times under 1 and 5 minutes, respectively, while, those were 31.6 g/mm and 22.3 g/mm for EDA treatment times under 1 and 5 minutes, respectively. Interfacial bonding between electroless plated Ni and Polyimide seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical treatment produces carboxyl and mine functional groups which are closely related the interfacial bonding mechanism. Finally, it is speculated that interfacial fracture energy seems to be controlled by O=C-O bonding near cohesive failure region.

• Journal of Powder Materials
• /
• v.4 no.4
• /
• pp.298-303
• /
• 1997

The activated sintering behavior of $MoSi_2$ powder compacts with addition of 0.5 and 1.0 wt.%Ni during the sintering under As atmosphere was studied. The shrinkage was measured and the microstructures were observed by SEM (scanning electron microscopy) and BEI (backscattered electron image) along with the phase analysis by EDS during heating up to 155$0^{\circ}C$ and holding for various time at 155$0^{\circ}C$. The most of shrinkage occurred upon heating and 92% of theoretical density was attained after sintering for 1 hr at 155$0^{\circ}C$. However, little shrinkage ensued even for prolonged sintering over 1 hr at 155$0^{\circ}C$. A liquid film formed at about 135$0^{\circ}C$ along necks and grain boundaries. The polyhedral grain structure composed of $(Mo,Ni)_5Si_3$and $Ni_2Si$ across the $MoSi_2$ grain boundary developed at 155$0^{\circ}C$. It was concluded that the activated sintering of $MoSi_2$ powder by Ni led to the diffusion of Si into Ni decreasing the liquidus temperature and the enhanced diffusion of Mo and Si through such a liquid phase and/or interboundary of $(Mo,Ni)_5Si_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.61-66
• /
• 2001

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$, but the grain size of 0.1, 1, 10 mol% NiO-doped $WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.95-98
• /
• 1999

The crystalline alignment of Ni substrates textured by RABiTS have a probability distribution in the surface plane. This makes it difficult to obtain a high quality of textures over all the range of a long Ni tape. In order to improve the textures of Ni tape, we have investigated a new method of texturing. We obtained non-cube textured Ni tapes by rolling and annealing a high purity Ni. In these tapes, the [001]-axes were tilted around the rolling direction, and the [100]-axes were parallel to the rolling direction. The average grain size was several cm$^2$. We deposited buffer layer (CeO$^2$/YSZ/CeO$^2$) and YBCO on those tapes. We found out that a YBCO film with grows normal with respect to the surface and this feature is independent of the tilting angles of the Ni [001]-axes.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.5
• /
• pp.253-256
• /
• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.