• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.181.2-181
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• 2003

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.521-530
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.29.1-29.1
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.33-33
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• 2004

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.50-51
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.809-812
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• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.

• Journal of Electrochemical Science and Technology
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• v.6 no.4
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• pp.116-120
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• 2015

Lithium diffusivity of fluorine-free and -doped tin-nickel (Sn-Ni) film model electrodes with improved interfacial (solid electrolyte interphase (SEI)) stability has been determined, utilizing variable rate cyclic voltammetry (CV). The method for interfacial stabilization comprises fluorine-doping on the electrode together with the use of electrolyte including fluorinated ethylene carbonate (FEC) solvent and trimethyl phosphite additive. It is found that lithium diffusivity of Sn is largely dependent on the fluorine-doping on the Sn-Ni electrode and interfacial stability. Lithium diffusivity of fluorine-doped electrode is one order higher than that of fluorine-free electrode, which is ascribed to the enhanced electrical conductivity and interfacial stabilization effect.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• Journal of Magnetics
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• v.2 no.2
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• pp.50-54
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• 1997

The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.

• Journal of Magnetics
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• v.22 no.1
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• pp.7-13
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• 2017

The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of ${\phi}=0^{\circ}-360^{\circ}$ are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(${\theta}$ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of $110^{\circ}$ are $100^{\circ}C$ and $90^{\circ}$, respectively.