• Composites Research
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• v.29 no.4
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• pp.194-202
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• 2016

A graphene film, two-dimensional carbon sheet, is a promising material for future electronic devices and so on. In graphene applications, the effect of substrate on the atomic/electronic structures of graphene is significant, so we studied an interaction between graphene film and substrate. To study the effect, we investigated the graphene films grown on Ni substrate with two crystal face of (111) and (100) by Raman spectroscopy, comparing with graphene films transferred on $SiO_2/Si$ substrate. In our study, the doping effect caused by charge transfer from Ni or $SiO_2/Si$ substrate to graphene was not observed. The bonding force between graphene and Ni substrate is stronger than that between graphene and $SiO_2/Si$. The graphene films grown on Ni substrate showed compressive strain and the growth of graphene films is incommensurate with Ni (100) lattice. The position of 2D band of graphene synthesized on Ni (111) and (100) substrate was different, and this result will be studied in the near future.

• Journal of the Korean Chemical Society
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• v.41 no.11
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• pp.594-599
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• 1997

Lithium nickel oxide ($Li_{2x}Ni_{1-x}O$) thin films have been prepared by the RF sputtering of lithiated nickel oxide target, where the film microstructure was controlled by the sputtering atmosphere $(Ar/O_2)$ and the substrate temperature ($T_s=50/230^{\circ}C$). From the transmission electron microscopic analysis, it is found that the most porous film with the grain size of $∼80\AA$ could be fabricated under the sputtering atmosphere of $P(O_2)=8{\times}10^2$ mbar with the $$T_s$=50^{\circ}C.$ In the optical and electrochemical studies, the$Li_{2x}Ni_{1-x}O$ films exhibit a significant electrochromic property in association with the lithium insertion/deinsertion process. The amount of charge insertion ($Q_i$) and the optical density (OD) variation depend on the crystallinity of the film as well as its thickness, and for the $Li_{2x}Ni_{1-x}O$ film (170 nm thickness) prepared under $O_2$ atmosphere and $T_s=50^{\circ}C$, the OD could be increased up to ∼1.3 by the charge insertion with $Q_i=30\;mC/cm^2.$

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.23-29
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• 1999

An yttria-stabilized zirconia(YSZ) thin film on a porous NiO-YSZ substrate for an anode support type solid oxide fuel cell(SOFC) was prepared by an electrophoretic deposition(EPD). Deposition condition and film properties in order to obtain the homogeneous YSZ thin film from the EPD solution with different polarity were studied. In different case of alcohol solution, hydrogen gas was produced in aqueous solution from the electrolyte reaction under constant current above 0.138 mA /$\textrm{cm}^2$.Its reaction generated the bubble-formed defect in the deposited film and decreased weight of the film. The homogeneous YSZ thin film was formed in alcohol solution at a constant current, 0.035 mA /$\textrm{cm}^2$ for 10 s.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• Journal of the Korean Magnetics Society
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• v.20 no.4
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• pp.129-133
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• 2010

Two-layered ferromagnetic alloy films (NiFe, CoFe) with a Conetic (NiFeCuMo) intermediately soft magnetic layer of different thickness were investigated to correlate the coercivity values and magnetization process with the strength of saturation field of hard axis. Thickness dependence of the $H_{EC}$ (coercivity of easy axis), $H_{HS}$ (saturation field of hard axis.), and X (susceptibility) of NiFe and NiFeCuMo thin films for the glass/Ta(5 nm)/[CoFe or NiFe(5 nm-t/2)]/NiFeCuMo(t = 0, 4, 6, 8, 10 nm)/[CoFe or NiFe(5 nm-t/2)]/Ta(5 nm) films prepared by the ion beam deposition method was measured. The magnetic properties $H_{EC}$, $H_{HS}$, and X of two-layered ferromagnetic CoFe, NiFe films with a NiFeCuMo intermediately super-soft magnetic layer were strongly depended on the thickness of NiFeCuMo layer. The value of the coercivity and magnetic susceptibility of the NiFeCuMo film decreased by 25% and doubled relative to that of the NiFe film.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.109-111
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• 1995

We suggest the phenominological model to determine the mangetoelastic coupling coefficient in Cu/Ni/Cu thin films by considering effective anisotropy energy with magnetic film thicknesses. This indirect determination can be applied other single crystalline systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.715-717
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• 2006

$NiCl_2$ vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the $NiCl_2$ compound. The $NiCl_2$ atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.55-59
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• 2013

Mold die sticking arises from silica filler abrasion to the cavity surface. Ni-P electroplating was examined to substitute conventional hard Cr plating. More than 4% of Phosphorus in the electroplated film produces nano crystal structure and annealing makes $Ni_3P$ precipitated to get hardness values equivalent to hard Cr.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.69-69
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.